FDS8842NZ

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDS8842NZ N-Channel PowerTrench® MOSFET 40 V, 14.9 A, 7.0 mΩ Features General Description „ Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A The FDS8842NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. „ Max rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A „ HBM ESD protection level of 4.4 kV typical(note 3) Applications „ High performance trench technology for extremely low rDS(on) and fast switching „ Synchronous Buck for Notebook Vcore and Server „ High power and current handling capability „ Notebook Battery „ Termination is Lead-free and RoHS Compliant „ Load Switch D D D G D S D S D S D D G SO-8 S S Pin 1 S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage VGS ID Parameter Ratings 40 Units V Gate to Source Voltage ±20 V Drain Current -Continuous 14.9 -Pulsed 93 Single Pulse Avalanche Energy EAS PD TJ, TSTG (Note 4) 253 Power Dissipation TA = 25 °C (Note 1a) 2.5 Power Dissipation TA = 25 °C (Note 1b) 1.0 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 25 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDS8842NZ Device FDS8842NZ ©2009 Fairchild Semiconductor Corporation FDS8842NZ Rev.C Package SO8 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDS8842NZ N-Channel Power Trench® MOSFET February 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 µA 3.0 V 40 V 35 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C VGS = 10 V, ID = 14.9 A 5.6 7.0 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 11.6 A 6.7 11.6 VGS = 10 V, ID = 14.9 A, TJ =125 °C 8.9 11.1 VDS = 5 V, ID = 14.9 A 111 gFS Forward Transconductance 1.0 1.9 -6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz f = 1 MHz 2890 3845 pF 340 455 pF 220 330 pF Ω 0.8 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 5 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 20 V, ID = 14.9 A, VGS = 10 V, RGEN = 6 Ω VDD = 20 V, ID = 14.9 A 13 23 7 14 ns ns 34 54 ns 5 10 ns 52 73 nC 27 38 nC 8.6 nC 9.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 14.9 A 0.8 1.2 VGS = 0 V, IS = 2.1 A 0.7 1.2 IF = 14.9 A, di/dt = 100 A/µs V 26 42 ns 15 27 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b) 125 °C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. 4. Starting TJ = 25 °C, L = 3 mH, IAS = 13 A, VDD = 40 V, VGS = 10 V. ©2009 Fairchild Semiconductor Corporation FDS8842NZ Rev.C 2 www.fairchildsemi.com FDS8842NZ N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 60 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 6 V 50 ID, DRAIN CURRENT (A) 5 VGS = 10 V VGS = 4.5 V VGS = 3.5 V 40 30 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 4 V 20 10 VGS = 3 V 0 0 0.3 0.6 0.9 1.2 4 VGS = 3.5 V 3 2 VGS = 4.5 V VGS = 6 V VGS = 10 V 0 1.5 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 20 ID = 14.9 A VGS = 10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4 V 1 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 15 ID = 14.9 A TJ = 125 oC 10 5 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 60 60 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 50 ID, DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 3 V VDS = 5 V 40 30 TJ = 150 oC 20 TJ = 25 oC 10 TJ = -55 oC 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) TJ = 150 oC TJ = 25 oC 1 TJ = -55 oC 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDS8842NZ Rev.C 10 0.1 0.2 0 0 VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDS8842NZ N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 5000 ID = 14.9 A 8 Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 15 V 6 VDD = 20 V VDD = 25 V 4 1000 Coss 2 f = 1 MHz VGS = 0 V 0 10 20 30 40 50 60 1 10 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 30 -3 10 Ig, GATE LEAKAGE CURRENT (A) IAS, AVALANCHE CURRENT (A) Crss 100 0.1 0 10 TJ = 125 oC TJ = 25 oC TJ = 100 oC 1 0.001 0.01 0.1 1 10 100 VGS = 0 V -5 10 TJ = 125 oC TJ = 25 oC -7 10 -9 1000 10 tAV, TIME IN AVALANCHE (ms) 0 5 10 15 20 25 30 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability Figure 10. Igss vs Vgs P(PK), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) 1 ms 10 10 ms 1 0.1 100 ms THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED 1s RθJA = 125 oC/W 10 s o DC TA = 25 C 0.01 0.01 0.1 1 10 100 200 VGS = 10 V SINGLE PULSE RθJA = 125 oC/W 100 TA = 25 oC 10 1 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDS8842NZ Rev.C 2000 1000 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDS8842NZ N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 0.0005 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDS8842NZ Rev.C 5 www.fairchildsemi.com FDS8842NZ N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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