FDS8813NZ

FDS8813NZ N-Channel PowerTrench® MOSFET March 2007 FDS8813NZ N-Channel 30V, 18.5A, 4.5mΩ Features tm PowerTrench® MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Max rDS(on) = 4.5mΩ at VGS = 10V, ID = 18.5A Max rDS(on) = 6.0mΩ at VGS = 4.5V, ID =16A HBM ESD protection level of 5.6kV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant D D D D G S S Pin 1 S D S D D S S D G SO-8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 4) (Note 1a) (Note 1b) (Note 1a) Ratings 30 ±20 18.5 74 337 2.5 1.0 -55 to +150 Units V V A mJ W °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) (Note 1b) 25 50 125 °C/W Package Marking and Ordering Information Device Marking FDS8813NZ Device FDS8813NZ Reel Size 13” Tape Width 12mm Quantity 2500 units ©2007 Fairchild Semiconductor Corporation FDS8813NZ Rev.C 1 www.fairchildsemi.com FDS8813NZ N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250μA, VGS = 0V ID = 250μA, referenced to 25°C VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V 30 20 1 ±10 V mV/°C μA μA On Characteristics (Note 2) VGS(th) ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250μA ID = 250μA, referenced to 25°C VGS = 10V, ID = 18.5A rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 16A VGS = 10V, ID = 18.5A, TJ = 125°C VDS = 5V, ID = 18.5A 1 1.8 –6 3.8 4.7 5.1 74 4.5 6.0 6.6 S mΩ 3 V mV/°C gFS Forward Transconductance Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 3115 580 345 1.8 4145 775 520 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VGS = 0V to 10V VGS = 0V to 5V VDD = 15V ID = 18.5A VDD = 15V, ID = 18.5A VGS = 10V, RGEN = 6Ω 13 8 39 7 55 28 9 10 24 16 63 14 76 40 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2.1A (Note 2) 0.7 32 27 1.2 47 41 V ns nC IF = 18.5A, di/dt = 100A/μs Notes: 1. RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper. b) 125°C/W when mounted on a minimum pad . 2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%. 3. The diode connected between the gate and source serves only as protection against ESD . No gate overvoltage rating is implied. 4. Starting TJ = 25°C, L = 3mH, IAS =15A, VDD = 30V, VGS = 10V. FDS8813NZ Rev.C 2 www.fairchildsemi.com FDS8813NZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 75 VGS = 10.0V 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 60 VGS = 4.5V 3.5 3.0 2.5 2.0 VGS = 3.0V PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX VGS = 3.5V 45 30 VGS = 4.0V VGS = 3.5V VGS = 3.0V VGS = 4V VGS = 4.5V 1.5 1.0 VGS = 10.0V 15 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 0 15 30 45 60 75 ID, DRAIN CURRENT(A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 10 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID =18.5A VGS = 10V PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX ID =9.5A 9 8 7 6 5 4 3 2 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX TJ = 125oC TJ = 25oC -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On- Resistance vs Junction Temperature 75 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0V ID, DRAIN CURRENT (A) 60 45 30 15 0 1.5 10 1 0.1 TJ = -55oC TJ = 25oC TJ = 150oC TJ = 25oC TJ = 150oC TJ = -55oC 0.01 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDS8813NZ Rev.C 3 www.fairchildsemi.com FDS8813NZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = 18.5A 10000 Ciss 8 6 4 2 0 0 10 20 30 40 Qg, GATE CHARGE(nC) 50 60 VDD = 10V VDD = 15V CAPACITANCE (pF) Coss 1000 VDD =20V Crss f = 1MHz VGS = 0V 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 Ig, GATE LEAKAGE CURRENT(A) -3 30 IAS, AVALANCHE CURRENT(A) 10 10 10 10 10 10 -4 VGS = 0V TJ = 150oC 10 -5 TJ = 25oC -6 TJ = 125oC -7 TJ = 25oC -8 1 0.01 -9 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 1000 0 5 10 15 20 25 30 VGS, GATE TO SOURCE VOLTAGE(V) Figure 9. Unclamped Inductive Switching Capability 20 Figure 10. Gate Leakage Current vs Gate to Source Voltage 100 RDS(ON) LIMITED 1ms ID, DRAIN CURRENT (A) VGS = 10V ID, DRAIN CURRENT (A) 15 10 10ms 100ms SINGLE PULSE TJ = MAX RATED RθJA = 125oC/W TA = 25oC 10 RθJA = 50 C/W o 1 VGS = 4.5V 1s 10s DC 5 0.1 0 25 50 75 100 125 o 150 0.01 0.01 0.1 1 10 100 TA, AMBIENT TEMPERATURE ( C) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature Figure 12. Forward Bias Safe Operating Area FDS8813NZ Rev.C 4 www.fairchildsemi.com FDS8813NZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 3000 1000 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 – T A ----------------------125 TA = 25oC 100 10 1 SINGLE PULSE RθJA = 125 C/W o 0.1 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, PULSE WIDTH (s) Figure 13. Single Pulse Maximum Power Dissipation 1 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.001 SINGLE PULSE RθJA = 125 C/W o t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.0001 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 14. Transient Thermal Response Curve FDS8813NZ Rev.C 5 www.fairchildsemi.com FDS8813NZ N-Channel PowerTrench® MOSFET tm TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I24 ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com