FDS8840NZ

MOSFET, N-Channel, POWERTRENCH) 40 V, 18.6 A, 4.5 mW FDS8840NZ General Description www.onsemi.com The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. D D D D Features • • • • • • Max rDS(on) = 4.5 m at VGS = 10 V, ID = 18.6 A Max rDS(on) = 6.0 m at VGS = 4.5 V, ID = 14.9 A HBM ESD Protection Level of 6 kV Typical (Note 3) High Performance Trench Technology for Extremely Low rDS(on) and Fast Switching High Power and Current Handling Capability These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Buck for Vcore and Server • Notebook Battery Pack • Load Switch Pin 1 S S S G SOIC8 CASE 751EB PIN ASSIGNMENT D G D S D S D S MARKING DIAGRAM 8 $Y&Z&2&K FDS 8840NZ 1 $Y &Z &2 &K FDS8840NZ = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 October, 2019 − Rev. 0 1 Publication Order Number: FDS8840NZ/D FDS8840NZ ORDERING INFORMATION Part Number Device Marking Package Shipping† FDS8840NZ FDS8840NZ SOIC8 (Pb-Free / Halogen Free) 2500 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V Drain Current Continuous 18.6 A ID Drain Current Pulsed 63 EAS Single Pulse Avalanche Energy (Note 4) 600 mJ PD Power Dissipation, TA = 25°C (Note 1a) 2.5 W Power Dissipation, TA = 25°C (Note 1b) 1.0 TJ, TSTG Operating and Storage Junction Temperature Range °C −55 to 150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RJC Thermal Resistance, Junction to Case (Note 1) 25 °C/W RJA Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Conditions Parameter Min Typ Max Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25°C Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 A Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 A 3.0 V IDSS IGSS 40 V 31 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A 1.0 1.8 ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature ID = 250 A, referenced to 25°C Coefficient −6 rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 18.6 A 3.9 4.5 VGS = 4.5 V, ID = 14.9 A 4.6 6.0 VGS = 10 V, ID = 18.6 A, TJ = 125°C 5.9 7.0 VDS = 5 V, ID = 18.6 A 83 gFS Forward Transconductance mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Crss Rg 5665 7535 pF Output Capacitance 650 865 pF Reverse Transfer Capacitance 445 670 pF Gate Resistance 1.2 VDS = 20 V, VGS = 0 V, f = 1 MHz www.onsemi.com 2 Ω FDS8840NZ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) Symbol Test Conditions Parameter Min Typ Max Unit 18 32 ns 13 23 ns Turn−Off Delay Time 57 103 ns Fall Time 11 20 ns 103 144 nC 54 76 nC Switching Characteristics td(on) tr td(off) tf Turn−On Delay Time VDD = 20 V, ID = 18.6 A, VGS = 10 V, RGEN = 6 Ω Rise Time Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge Qgs Gate to Source Charge 16 nC Qgd Gate to Drain “Miller” Charge 19 nC VGS = 0 V to 5 V VDD = 20 V, ID = 18.6 A Drain−Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 18.6 A 0.8 1.2 VGS = 0 V, IS = 2.1 A 0.7 1.2 33 53 ns 21 34 nC IF = 18.6 A, di/dt = 100 A/s V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RJC is guaranteed by design while RCA is determined by the user’s board design. a.) 50°C/W when mounted on a 1 in2 pad of 2 oz copper b.) 125°C/W when mounted on a minimum pad 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. 4. Starting TJ = 25°C, L = 3 mH, IAS = 20 A, VDD = 40 V, VGS = 10 V. www.onsemi.com 3 FDS8840NZ TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) VGS = 10 V VGS = 4 V 50 ID, DRAIN CURRENT (A) 5 VGS = 4.5 V VGS = 3.5 V 40 30 VGS = 3 V 20 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 10 0 0 0.2 0.4 0.6 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 60 4 VGS = 3 V 3 2 1 VGS = 10 V 0 0.8 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on) , DRAIN TO 1.4 1.2 1.0 0.8 SOURCE ON−RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 40 50 60 12 ID = 18.6 A VGS = 10 V 0.6 −75 −50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE oC () PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 9 ID = 18.6 A TJ = 125 oC 6 3 TJ = 25 oC 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On−Resistance vs Junction Temperature Figure 4. On−Resistance vs Gate to Source Voltage 100 60 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 Figure 2. Normalized On−Resistance vs Drain Current and Gate Voltage 1.8 50 20 ID, DRAIN CURRENT (A) Figure 1. On−Region Characteristics 1.6 VGS = 4.5 V VGS = 4 V VGS = 3.5 V VDS = 5 V 40 TJ = 150 oC 30 20 TJ = 25 oC 10 TJ = −55oC VGS = 0 V 10 TJ = 25 oC 1 TJ = −55oC 0.1 0.2 0 01234 TJ = 150 oC 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 4 FDS8840NZ TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 10000 ID = 18.6 A 8 Ciss VDD = 15 V CAPACITANCE (pF) VGS , GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 20 V 4 VDD = 25 V 1000 Coss 0 0 30 60 90 100 0.1 120 1 Qg, GATE CHARGE (nC) −3 10 TJ = Ig, GATE LEAKAGE CURRENT (A) IAS, AVALANCHE CURRENT (A) 40 Figure 8. Capacitance vs Drain to Source Voltage 30 25 oC TJ = 100 oC 10 TJ = 1 0.001 125 oC VGS = 0 V −4 10 −5 10 TJ = 125 oC −6 10 TJ = 25 oC −7 10 −8 10 −9 0.01 0.1 1 10 100 10 1000 0 5 tAV, TIME IN AVALANCHE (ms) 10 15 20 25 30 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability Figure 10. IGSS vs VGS 2000 1000 P(PK), PEAK TRANSIENT POWER (W) 100 1 ms 10 10 ms 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V 2 100 ms THIS AREA IS LIMITED BY rDS(on) 0.1 0.01 0.01 SINGLE PULSE TJ = MAX RATED 1s RJA = 125 oC/W 10 s TA = 25 oC DC 0.1 1 10 100 VGS = 10 V SINGLE PULSE RJA = 125 oC/W 100 TA = 25 oC 10 1 0.3 −3 10 −2 10 −1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 FDS8840NZ TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) NORMALIZED THERMAL IMPEDANCE, ZJA 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z JA x RJA + TA o RJA = 125 C/W 0.001 0.0003 −3 10 −2 10 −1 10 1 10 100 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC8 CASE 751EB ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13735G SOIC8 DATE 24 AUG 2017 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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