FDS8817NZ

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDS8817NZ N-Channel PowerTrench® MOSFET 30V, 15A, 7.0mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. „ Max rDS(on) = 7mΩ at VGS = 10V, ID = 15A „ Max rDS(on) = 10mΩ at VGS = 4.5V, ID =12.6A „ HBM ESD protection level of 3.8KV typical (note 3) This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS compliant D D D D G SO-8 S D G D S D S D S S Pin 1 S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous Ratings 30 Units V ±20 V (Note 1a) 15 -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG A 60 (Note 4) 181 Power Dissipation (Note 1a) 2.5 Power Dissipation (Note 1b) 1.0 Operating and Storage Junction Temperature Range -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1a) (Note 1) 25 50 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 125 °C/W Package Marking and Ordering Information Device Marking FDS8817NZ ©2008 Fairchild Semiconductor Corporation FDS8817NZ Rev.C1 Device FDS8817NZ Reel Size 13” 1 Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDS8817NZ N-Channel PowerTrench® MOSFET November 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 30 V ID = 250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 1 μA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±10 μA 3 V mV/°C 20 On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250μA, referenced to 25°C –6 VGS = 10V, ID = 15A 5.4 7 rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 12.6A 7.0 10 7.5 11 VGS = 10V, ID = 15A gFS Forward Transconductance 1 TJ = 125°C VDS = 5V, ID = 15A 1.8 mV/°C 54 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz 1805 2400 pF 335 445 pF 200 300 pF Ω f = 1MHz 1.4 11 22 ns VDD = 15V, ID = 15A VGS = 10V, RGEN = 6Ω 13 26 ns 25 40 ns 7 14 ns 32 45 nC 17 24 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to 10V Qg Total Gate Charge VGS = 0V to 5V Qgs Gate to Source Charge 6 nC Qgd Gate to Drain “Miller” Charge 7 nC VDD = 15V ID = 15A Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 2.1A (Note 2) IF = 15A, di/dt = 100A/μs 0.8 1.2 V 24 36 ns 15 23 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper. b) 125°C/W when mounted on a minimum pad . 2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%. 3. The diode connected between the gate and source serves only as protection against ESD . No gate overvoltage rating is implied. 4. Starting TJ = 25°C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V. FDS8817NZ Rev.C1 2 www.fairchildsemi.com FDS8817NZ N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted ID, DRAIN CURRENT (A) VGS = 10.0V VGS = 4.5V 45 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX VGS = 4.0V VGS = 3.5V 30 15 VGS = 3.0V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 5 VGS = 3.0V 4 VGS = 3.5V 3 VGS = 4.0V 2 VGS = 4.5V 1 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 0 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 45 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 26 1.8 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics ID = 15A VGS = 10V 1.6 1.4 1.2 1.0 0.8 ID =7.5A 22 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 18 14 TJ = 125oC 10 6 TJ = 25oC 2 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 3 150 Figure 3. Normalized On- Resistance vs Junction Temperature 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 60 ID, DRAIN CURRENT (A) VGS = 10.0V 0 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 50 VDD = 5V 40 30 20 TJ = 150oC TJ = 25oC 10 TJ = -55oC 0 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 Figure 5. Transfer Characteristics FDS8817NZ Rev.C1 VGS = 0V 10 1 TJ = 150oC TJ = 25oC 0.1 TJ = -55oC 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDS8817NZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 3000 ID = 15A 8 Ciss VDD = 10V 6 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 15V VDD =20V 4 2 1000 Coss Crss f = 1MHz VGS = 0V 0 0 5 10 15 20 25 Qg, GATE CHARGE(nC) 30 100 0.1 35 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 1E-3 Ig, GATE LEAKAGE CURRENT(A) IAS, AVALANCHE CURRENT(A) 20 10 TJ = 25oC TJ = 125oC 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 400 VGS = 0V 1E-4 TJ = 150oC 1E-5 1E-6 1E-7 TJ = 25oC 1E-8 1E-9 0 5 10 15 20 25 30 VGS, GATE TO SOURCE VOLTAGE(V) Figure 9. Unclamped Inductive Switching Capability Figure 10. Gate Leakage Current vs Gate to Source Voltage 100 15 rDS(on) LIMITED ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 12 VGS = 10V 9 VGS = 4.5V 6 3 100us 10 1s 10ms 1 100ms SINGLE PULSE TJ = MAX RATED RθJA = 125oC/W TA = 25oC 0.1 1s 10s DC o RθJA = 50 C/W 0.01 0.01 0 25 50 75 100 125 150 o TA, AMBIENT TEMPERATURE ( C) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature FDS8817NZ Rev.C1 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Forward Bias Safe Operating Area 4 www.fairchildsemi.com FDS8817NZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2000 1000 FOR TEMPERATURES NORMALIZED THERMAL IMPEDANCE, ZθJA VGS = 10V ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 I = I25 150 – T A -----------------------125 TA = 25oC 10 SINGLE PULSE 1 o RθJA = 125 C/W 0.2 -4 10 -3 -2 10 10 -1 10 1 2 10 3 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Single Pulse Maximum Power Dissipation NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 0.0002 -4 10 -3 10 -2 10 -1 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 14. Transient Thermal Response Curve FDS8817NZ Rev.C1 5 www.fairchildsemi.com FDS8817NZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ ™ TinyPower™ Saving our world, 1mW /W /kW at a time™ TinyPWM™ SmartMax™ TinyWire™ SMART START™ μSerDes™ SPM® STEALTH™ SuperFET™ UHC® SuperSOT™-3 Ultra FRFET™ SuperSOT™-6 UniFET™ SuperSOT™-8 VCX™ SupreMOS™ VisualMax™ SyncFET™ XS™ ® The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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