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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FFB20UP20DN_F085
10A, 200V Ultrafast Dual Rectifiers
tm
Features
Description
High Reverse Voltage : VRRM = 200V
The FFB20UP20DN_F085 is an ultrafast rectifier. It has
a low forward voltage drop and is a silicon nitride passivated
ion-implanted epitaxial planar construction.
Avalanche Energy Rated
Planar Construction
This device is intended for use as a freewheeling/clamping
rectifier in a variety of switching power supplies and other
power switching applications. Its low stored charge and
hyperfast recovery minimize ringing and electrical noise in
many power switching circuits, thus reducing power loss in
the switching transistors.
Applications
Output Rectifiers
Switching Mode Power Supply
Free-wheeling diode for motor application
Power switching circuits
Qualified to AEC Q101
RoHS Compliant
Pin Assignments
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VRRM
Peak Repetitive Reverse Voltage
200
V
VRWM
Working Peak Reverse Voltage
200
V
VR
DC Blocking Voltage
200
V
If(avg)
Average Rectified Forward Current
10
A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
100
A
TJ, TSTG
Operating Junction and Storage Temperature
-55 to +175
°C
@ TC = 155oC
Thermal Characteristics TC = 25°C unless otherwise noted
Symbol
RθJC1
Parameter
Maximum Thermal Resistance, Junction to Case
Max
Units
3.5
°C/W
Package Marking and Ordering Information
Device Marking
F20UP20DN
Device
FFB20UP20DN_F085
©2010 Fairchild Semiconductor Corporation
FFB20UP20DN_F085 Rev. A
Package
TO-263
1
Reel Size
13”
Tape Width
24mm
Quantity
800
www.fairchildsemi.com
FFB20UP20DN_F085 10A, 200V Ultrafast Dual Rectifiers
February 2010
Symbol
VF
2
Parameter
ο
Min.
Typ.
Max
Units
IF = 10A
IF = 10A
TC = 25 C
TC = 150οC
-
-
1.15
1.0
V
V
IR 2
VR = 200V
VR = 200V
TC = 25οC
TC = 150οC
-
-
10
250
µA
µA
trr
IF =1A, di/dt = 200A/µs, VCC = 130V
IF =10A, di/dt = 200A/µs, VCC = 130V
TC = 25 οC
TC = 25οC
-
15
27
25
40
ns
ns
ta
tb
Qrr
IF =10A, di/dt = 200A/µs, VCC = 130V
TC = 25οC
TC = 25οC
TC = 25οC
-
21
6
50
-
ns
ns
nC
WAVL
Avalanche Energy (L = 20mH)
10
-
-
mJ
Notes
1: Rth_jc value is specified for each die
2: Pulse: Test Pulse width = 300S, Duty Cycle = 2%
2
FFB20UP20DN_F085 Rev. A
2
FFB20UP20DN_F085 10A, 200V Ultrafast Dual Rectifiers
Electrical Characteristics TC = 25°C unless otherwise noted
www.fairchildsemi.com
100
10
Reverse Current, IR [µA]
Forward Current, IF [A]
20
o
TC = 175 C
o
TC = 100 C
1
o
TC = 25 C
10
o
TC = 175 C
1
0.1
o
TC = 100 C
0.01
o
TC = 25 C
0.1
0.2
0.4
0.6
0.8
Forward Voltage, VF [V]
1.0
1E-3
1.2
Figure 1. Typical Forward Voltage Drop
Reverse Recovery Time, trr [ns]
Capacitance, cj [pF]
100
TC = 175 C
o
TC = 150 C
4
o
TC = 25 C
2
150
200
di/dt [µ/s]
250
300
30
o
TC = 150 C
25
o
TC = 25 C
100
150
200
di/dt [A/µs]
250
300
12
10
DC
8
6
4
2
0
120
130
140
150
160
Case Temperature, TC (oC)
170
Figure 6. Case Temperature, Tc [oC]
Figure 5. Typical Reverse Recovery Current
FFB20UP20DN_F085 Rev. A
35
Average Recitified Forward Current, IF(AV) [A]
Reverse Recovery Current, Irr [A]
o
6
100
o
TC = 175 C
40
Figure 4. Typical Reverse Recovery Time
8
0
50
IF = 10A
45
20
50
100
Figure 3. Typical Junction Capacitance
IF = 10A
200
50
f = 1MHz
1
10
Reverse Voltage , VR [V]
50
100
150
Reverse Voltage , VR [V]
Figure 2. Typical Reverse Current
400
10
0.1
0
3
www.fairchildsemi.com
FFB20UP20DN_F085 10A, 200V Ultrafast Dual Rectifiers
Typical Characteristics TC = 25°C unless otherwise noted
10.67
9.65
10.67
-A1.68
1.00
4
4
9.45
9.65
8.38
10.00
1.78 MAX
2
3
1
1.78
1.14
0.99
0.51
(2.12)
2
0.25 MAX
PLASTIC BODY
STUB
3.80
3
1
1.05
0.25
M
5.08
B AM
LAND PATTERN RECOMMENDATION
UNLESS NOTED, ALL DIMS TYPICAL
5.08
FRONT VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
6.22 MIN
4
-B-
4.83
4.06
1.65
1.14
4
6.86 MIN
15.88
14.61
SEE
DETAIL A
2
2
3
1
3
1
BACK VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
GAGE PLANE
0.74
0.33
0.25
2.79
1.78
0.25 MAX
(5.38)
SEATING
PLANE
SCALE: 2X
0.10
NOTES: UNLESS OTHERWISE SPECIFIED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
DIMENSIONING AND TOLERANCING PER
ASME Y14.5 - 2009.
D) LOCATION OF THE PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE).
E) LANDPATTERN RECOMMENDATION PER IPC
TO254P1524X482-3N
B
F) FILENAME: TO263A02REV8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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