FFB20UP20STM

DATA SHEET www.onsemi.com Ultrafast Diode 2 200 V, 20 A 1 FFB20UP20S D2PAK 3−LEAD CASE 418AJ Description The FFB20UP20S is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applications as welder application. 3 1. Anode 2. Cathode 3. Anode Features • • • • • Ultrafast Recovery, trr = 45 ns (@ IF = 20 A) Max Forward Voltage, VF = 1.15 V (@ TC = 25°C) Reverse Voltage, VRRM = 200 V Avalanche Energy Rated RoHS Compliant MARKING DIAGRAM F20UP20SG AYWW Applications • • • • Output Rectifiers SMPS, Welder, UPS Free−Wheeling Diode for Motor Application Power Switching Circuits F20UP20S = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted Rating Unit VRRM Peak Repetitive Reverse Voltage Parameter 200 V VRWM Working Peak Reverse Voltage 200 V DC Blocking Voltage 200 V IF(AV) Average Rectified Forward Current @ TC = 115°C 20 A IFSM Non−repetitive Peak Surge Current 60 Hz Single Half−Sine Wave 200 A −65 to +175 °C Symbol VR TJ, TSTG Operating Junction and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2006 February, 2022 − Rev. 3 1 Publication Order Number: FFB20UP20S/D FFB20UP20S THERMAL CHARACTERISTICS TC = 25°C unless otherwise noted Parameter Symbol RθJC Max Unit 2.0 °C/W Maximum Thermal Resistance, Junction−to−Case PACKAGE MARKING AND ORDERING INFORMATION Part Number FFB20UP20STM Top Mark Package Packing Method Reel Size Tape Width Quantity F20UP20S D2PAK Reel 13″ Dia N/A 800 ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max VF (Note 1) Forward Voltage IF = 20 A IF = 20 A TC = 25°C TC = 100°C − − − − 1.15 1.0 IR (Note 1) Reverse Current VR = 200 V VR = 200 V TC = 25°C TC = 100°C − − − − 100 500 Unit V mA trr IF = 1 A, diF/dt = 100 A/ms, VR = 30 V IF = 20 A, diF/dt = 200 A/ms, VR = 130 V TC = 25°C − − − − 35 45 ns ta tb Qrr IF = 20 A, diF/dt = 200 A/ms, VR = 130 V TC = 25°C − − − 11 13 21 − − − ns ns nC 20 − − mJ WAVL Avalanche Energy (L = 40 mH) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2% Test Circuit and Waveforms Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 2 FFB20UP20S TYPICAL CHARACTERISTICS 10 REVERSE CURRENT, IR [mA] FORWARD CURRENT, I F [A] 100 TC = 75 oC 10 TC = 125 o C TC = 25 o C 1 0.1 0.4 0.6 0.8 1.0 1. 2 1.4 TC = 125 o C 1 TC = 100 o C 0.1 TC = 75 o C TC = 25 o C 0.01 1E−3 0 1.6 50 Figure 3. Typical Forward Voltage Drop 200 52 f = 1MHz 350 REVERSE RECOVERY TIME, Trr [ns] JUNCTION CAPACITANCE, C J [pF] 150 Figure 4. Typical Reverse Current 400 300 250 200 150 100 50 0 0.1 1 10 IF = 20A 48 44 TC = 125 o C 40 36 TC = 75 o C 32 28 TC = 25 o C 24 20 100 100 200 REVERSE VOLTAGE, V R [V] AVERAGE FORWARD CURRENT, I F(AV) [A] IF = 20A 10 8 TC = 125 o C 6 TC = 75 o C 4 o TC = 25 C 2 200 300 400 500 Figure 6. Typical Reverse Recovery Time 12 0 100 300 di F/dt [A / μs] Figure 5. Typical Junction Capacitance REVERSE RECOVERY CURRENT, Irr [A] 100 REVERSE VOLTAGE, V R [V] FORWARD VOLTAGE, VF [V] 400 500 30 25 20 DC 15 10 5 0 100 110 120 130 140 150 CASE TEMPERATURE, TC [ o C] di F/dt [A/μs] Figure 7. Typical Reverse Recovery Current Figure 8. Forward Current Derating Curve www.onsemi.com 3 FFB20UP20S PACKAGE DIMENSIONS D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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