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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FFB10UP20S
10 A, 200 V, Ultrafast Diode
Features
Description
• Ultrafast with Soft Recovery : < 45 ns
The FFB10UP20S is an ultrafast diode with low forward
voltage drop and rugged UIS capability. This device is
intended for use as freewheeling and clamping diodes in a
variety of switching power supplies and other power switching
applications. It is specially suited for use in switching power
supplies and industrial applications as welder application.
• High Reverse Voltage : VRRM = 200 V
• Avalanche Energy Rated
• Planar Construction
• RoHS Compliant
Applications
• Output Rectifiers
• SMPS
• Free-Wheeling Diode for Motor Application
• Power Switching Circuits
1
2
3
D2-PAK
1
1. Anode 2. Cathode 3. Anode
1.Anode 2.Cathode 3.Anode
Absolute Maximum Ratings
Symbol
(per diode) Ta = 25°C unless otherwise noted
Value
Unit
VRRM
Peak Repetitive Reverse Voltage
Parameter
200
V
VRWM
Working Peak Reverse Voltage
200
V
VR
DC Blocking Voltage
200
V
IF(AV)
Average Rectified Forward Current
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
TJ, TSTG
Operating Junction and Storage Temperature
Thermal Characteristics T
a
Symbol
RθJC
@ TC = 120°C
10
A
100
A
- 65 to +150
°C
= 25°C unless otherwise noted
Parameter
Maximum Thermal Resistance, Junction to Case
Max
Unit
3.0
°C/W
Package Marking and Ordering Information
Part Number
FFB10UP20STM
Top Mark
FFB10UP20S
©2005 Fairchild Semiconductor Corporation
FFB10UP20S Rev. C1
Package Packing Method
D2-PAK
Reel
1
Reel Size
Tape Width
Quantity
13" Dia
N/A
800
www.fairchildsemi.com
FFB10UP20S — Ultrafast Diode
November 2013
Symbol
(per diode) Ta = 25°C unless otherwise noted
Parameter
Min.
Typ.
Max.
Units
IF = 10 A
IF = 10 A
TC = 25 °C
TC = 150 °C
-
-
1.15
1.0
V
V
VR = 200 V
VR = 200 V
TC = 25 °C
TC = 150 °C
-
-
100
500
µA
µA
trr
IF = 1 A, diF/dt = 100 A/µs, VR = 30 V
IF = 10 A, diF/dt = 200 A/µs, VR = 130 V
TC = 25 °C
TC = 25 °C
-
-
35
45
ns
ns
ta
tb
Qrr
IF = 10 A, diF/dt = 200 A/µs, VR = 130 V
TC = 25 °C
TC = 25 °C
TC = 25 °C
-
15
12
36
-
ns
ns
nC
WAVL
Avalanche Energy (L = 20 mH)
10
-
-
mJ
VF
*
IR
*
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
©2005 Fairchild Semiconductor Corporation
FFB10UP20S Rev.C1
2
www.fairchildsemi.com
FFB10UP20S — Ultrafast Diode
Electrical Characteristics
FFB10UP20S — Ultrafast Diode
Typical Performance Characteristics
Figure 3. Typical Forward Voltage Drop
Figure 4. Typical Reverse Current
50
100
Reverse Current , I R [µA]
Forward Current , IF [A]
o
TC = 100 C
10
o
TC = 25 C
1
0.1
0.0
0.5
1.0
1.5
10
o
TC = 100 C
1
0.1
o
0.001
2.0
TC = 25 C
0.01
0
50
Forward Voltage , VF [V]
100
150
200
Reverse Voltage , VR [V]
Figure 5. Typical Junction Capacitance
Figure 6. Typical Reverse Recovery Time
400
60
IF=10A
Reverse Recovery Time , trr [ns]
Capacitance , Cj [pF]
f = 1 MHz
100
10
0.1
1
10
100
50
o
TC=125 C
40
30
o
TC=25 C
20
100
200
Reverse Voltage , VR [V]
Reverse Recovery Current , Irr [A]
12
IF = 10A
10
8
o
TC=125 C
4
o
TC=25 C
2
0
100
200
300
400
500
diF/dt [A/µs]
©2005 Fairchild Semiconductor Corporation
FFB10UP20S Rev.C1
400
500
Figure 8. Forward Current Deration Curve
Average Rectified Forward Current, IF(AV) [A]
Figure 7. Typical Reverse Recovery Current
6
300
diF/dt [A/µs]
3
14
12
10
DC
8
6
4
2
0
100
110
120
130
140
150
o
Case Temperature, TC [ C]
www.fairchildsemi.com
FFB10UP20S — Ultrafast Diode
Mechanical Dimensions
Figure 9. TO-263 2L (D2-PAK) - 2LD,TO263, SURFACE MOUNT
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002.
©2005 Fairchild Semiconductor Corporation
FFB10UP20S Rev.C1
4
www.fairchildsemi.com
FFB10UP20S — Ultrafast Diode
©2005 Fairchild Semiconductor Corporation
FFB10UP20S Rev.C1
5
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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