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FGA40S65SH
650 V, 40 A Field Stop Trench IGBT
Features
General Description
• Maximum Junction Temperature : TJ = 175oC
Using Fairchild’s proprietary trench design and advanced field
stop IGBT technology, 650V field stop offers superior conduction and switching performance and easy parallel operation.
This device is well suited for the resonant or soft switching application such as induction heating and MWO.
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.4 V ( Typ.) @ IC = 40 A
• 100% of the Parts tested for ILM(1)
Applications
• High Input Impedance
• Tighten Parameter Distribution
• Induction Heating, MWO
• RoHS Compliant
C
G
TO-3PN
E
G CE
Absolute Maximum Ratings
FGA40S65SH
Unit
VCES
Symbol
Collector to Emitter Voltage
Description
650
V
VGES
Gate to Emitter Voltage
20
V
Transient Gate to Emitter Voltage
30
V
Collector Current
@ TC = 25oC
80
A
Collector Current
@ TC = 100oC
40
A
ILM (1)
Pulsed Collector Current
@ TC = 25oC
120
A
ICM (2)
Pulsed Collector Current
120
A
IC
IF
IFM
PD
o
Diode Forward Current
@ TC = 25 C
40
A
Diode Forward Current
@ TC = 100oC
20
A
240
A
Maximum Power Dissipation
@ TC = 25oC
268
W
Maximum Power Dissipation
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Operating Junction Temperature
TJ
Tstg
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
134
W
-55 to +175
o
C
-55 to +175
o
C
300
o
C
FGA40S65SH
Unit
Thermal Characteristics
Symbol
Parameter
RJC (IGBT)
Thermal Resistance, Junction to Case, Max.
RJA
Thermal Resistance, Junction to Ambient, Max.
0.56
40
o
C/W
oC/W
Notes:
1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 35 , Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
©2016 Fairchild Semiconductor Corporation
FGA40S65SH Rev. 1.1
1
www.fairchildsemi.com
FGA40S65SH — 650 V, 40 A Field Stop Trench IGBT
February 2016
Device Marking
Device
Package
Reel Size
Tape Width
Qty per Tube
FGA40S65SH
FGA40S65SH
TO-3PN
-
-
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage
VGE = 0 V, IC = 1 mA
650
-
-
V
BVCES
TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 1mA
-
0.65
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
250
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
400
nA
IC = 40 mA, VCE = VGE
On Characteristics
VGE(th)
VCE(sat)
VFM
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
Diode Forward Voltage
4.0
5.3
7.5
V
IC = 40 A, VGE = 15 V
-
1.40
1.81
V
IC = 40 A, VGE = 15 V,
TC = 175oC
-
1.65
-
V
IF = 20 A, TC = 25oC
-
1.45
1.95
V
IF = 20 A, TC = 175oC
-
1.65
-
V
-
2012
-
pF
-
49
-
pF
-
26
-
pF
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
Td(on)
Turn-On Delay Time
-
19.2
-
ns
Tr
Rise Time
-
65.6
-
ns
Td(off)
Turn-Off Delay Time
-
68.8
-
ns
Tf
Fall Time
-
96.8
-
ns
Eon
Turn-On Switching Loss
-
194
-
uJ
Eoff
Turn-Off Switching Loss
-
388
-
uJ
VCC = 400 V, IC = 40 A,
RG = 6 , VGE = 15 V,
Resistive Load, TC = 25oC
Ets
Total Switching Loss
-
592
-
uJ
Td(on)
Turn-On Delay Time
-
19.2
-
ns
Tr
Rise Time
-
87.2
-
ns
Td(off)
Turn-Off Delay Time
-
75.2
-
ns
Tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Ets
VCC = 400 V, IC = 40 A,
RG = 6 , VGE = 15 V,
ResistiveLoad, TC = 175oC
-
158
-
ns
-
292
-
uJ
Turn-Off Switching Loss
-
633
-
uJ
Total Switching Loss
-
925
-
uJ
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2016 Fairchild Semiconductor Corporation
FGA40S65SH Rev. 1.1
VCE = 400 V, IC = 40 A,
VGE = 15 V
2
-
73
-
nC
-
13
-
nC
-
28
-
nC
www.fairchildsemi.com
FGA40S65SH — 650 V, 40 A Field Stop Trench IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
120
o
TC = 25 C
20V
20V
o
TC = 175 C
15V
15V
12V
10V
10V
90
Collector Current, IC [A]
Collector Current, IC [A]
12V
60
VGE = 8V
30
90
60
30
0
0
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
0
5
Figure 3. Typical Saturation Voltage
Characteristics
Collector-Emitter Voltage, VCE [V]
o
TC = 25 C
90
o
TC = 175 C
60
30
0
1
2
3
Collector-Emitter Voltage, VCE [V]
4
Figure 5. Saturation Voltage vs. VGE
Common Emitter
VGE = 15V
80A
2
40A
IC = 20A
1
-100
-50
0
50
100
150
200
o
Collector-Emitter Case Temperature, TC [ C]
0
Figure 6. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
o
Collector-Emitter Voltage, VCE [V]
TC = 25 C
16
12
40A
8
IC = 20A
80A
4
0
5
3
Common Emitter
VGE = 15V
Collector Current, IC [A]
1
2
3
4
Collector-Emitter Voltage, VCE [V]
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
120
Collector-Emitter Voltage, VCE [V]
VGE = 8V
TC = 175 C
16
12
IC = 20A
8
40A
80A
4
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
©2016 Fairchild Semiconductor Corporation
FGA40S65SH Rev. 1.1
20
4
3
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGA40S65SH — 650 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Gate charge Characteristics
15
10000
Common Emitter
Gate-Emitter Voltage, VGE [V]
o
Capacitance [pF]
Cies
1000
Coes
100
Common Emitter
VGE = 0V, f = 1MHz
Cres
TC = 25 C
12
300V
400V
VCC = 200V
9
6
3
o
TC = 25 C
0
10
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 9. Turn-on Characteristics vs.
Gate Resistance
20
40
60
Gate Charge, Qg [nC]
Figure 10. Turn-off Characteristics vs.
Gate Resistance
1000
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
td(off)
o
TC = 25 C
Switching Time [ns]
Switching Time [ns]
80
o
TC = 175 C
tr
100
td(on)
tf
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
TC = 25 C
o
TC = 175 C
10
10
0
10
20
30
40
Gate Resistance, RG []
0
50
20
30
50
Figure 12. Turn-on Characteristics vs.
Collector Current
400
1000
Eoff
Switching Time [ns]
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
100
tr
100
Eon
td(on)
10
Common Emitter
VGE = 15V, RG = 6
o
o
TC = 25 C
TC = 25 C
o
o
TC = 175 C
TC = 175 C
50
40
Gate Resistance, RG []
Figure 11. Switching Loss vs.
Gate Resistance
Switching Loss [uJ]
10
0
10
20
30
40
Gate Resistance, RG []
©2016 Fairchild Semiconductor Corporation
FGA40S65SH Rev. 1.1
1
20
50
30
40
50
60
70
80
Collector Current, IC [A]
4
www.fairchildsemi.com
FGA40S65SH — 650 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Switching Loss vs.
Collector Current
5000
Switching Loss [uJ]
Switching Time [ns]
500
tf
100
td(off)
Common Emitter
VGE = 15V, RG = 6
1000
Eoff
Eon
Common Emitter
VGE = 15V, RG = 6
o
o
TC = 25 C
TC = 25 C
100
o
o
TC = 175 C
TC = 175 C
10
20
30
40
50
60
Collector Current, IC [A]
70
50
20
80
30
40
50
60
70
80
Collector Current, IC [A]
Figure 15. Load Current Vs. Frequency
Figure 16. SOA Characteristics
300
250
Square Wave
100
o
200
VGE = 15/0V, RG = 6
Collector Current, Ic [A]
Collector Current, [A]
TJ