FGA40N65SMD

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGA40N65SMD 650 V, 40 A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. • Positive Temperature Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A • Fast Switching : EOFF = 6.5 uJ/A • Tighten Parameter Distribution • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Induction Heating • Telecom, ESS C G TO-3PN E G CE Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM (1) PD TJ Description Ratings Unit Collector to Emitter Voltage 650 V Gate to Emitter Voltage ± 20 V Transient Gate to Emitter Voltage Collector Current @ TC = 25oC Collector Current @ TC = 100oC Pulsed Collector Current o ± 30 V 80 A 40 A 120 A Diode Forward Current @ TC = 25 C 40 A Diode Forward Current @ TC = 100oC 20 A 120 A Maximum Power Dissipation @ TC = 25oC 349 W Maximum Power Dissipation @ TC = 100oC Pulsed Diode Maximum Forward Current Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 174 W -55 to +175 o C -55 to +175 o C 300 o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature ©2011 Fairchild Semiconductor Corporation FGA40N65SMD Rev. C5 1 www.fairchildsemi.com FGA40N65SMD — 650 V, 40 A Field Stop IGBT August 2014 Symbol Parameter Typ. Max. Unit o RθJC(IGBT) Thermal Resistance, Junction to Case - 0.43 RθJC(Diode) Thermal Resistance, Junction to Case - 1.5 oC/W C/W RθJA Thermal Resistance, Junction to Ambient - 40 oC/W Package Marking and Ordering Information Part Number Top Mark FGA40N65SMD FGA40N65SMD Package Packing Method TO-3PN Electrical Characteristics of the IGBT Symbol Parameter Reel Size Tube Tape Width Quantity N/A N/A 30 TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 650 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA ΔBVCES ΔTJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 μA - 0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 μA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 250 μA, VCE = VGE 3.5 4.5 6.0 V IC = 40 A, VGE = 15 V - 1.9 2.5 V IC = 40 A, VGE = 15 V, TC = 175oC - 2.1 - V - 1880 - pF - 180 - pF - 50 - pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time - 12 16 ns tr Rise Time - 20 28 ns td(off) Turn-Off Delay Time - 92 120 ns tf Fall Time - 13 17 ns Eon Turn-On Switching Loss - 0.82 1.23 mJ Eoff Turn-Off Switching Loss - 0.26 0.34 mJ VCC = 400 V, IC = 40 A, RG = 6 Ω, VGE = 15 V, Inductive Load, TC = 25oC Ets Total Switching Loss - 1.08 1.57 mJ td(on) Turn-On Delay Time - 15 - ns tr Rise Time - 22 - ns td(off) Turn-Off Delay Time - 116 - ns tf Fall Time - 16 - ns Eon Turn-On Switching Loss - 1.08 - mJ Eoff Turn-Off Switching Loss - 0.60 - mJ Ets Total Switching Loss - 1.68 - mJ ©2011 Fairchild Semiconductor Corporation FGA40N65SMD Rev. C5 VCC = 400 V, IC = 40 A, RG = 6 Ω, VGE = 15 V, Inductive Load, TC = 175oC 2 www.fairchildsemi.com FGA40N65SMD — 650 V, 40 A Field Stop IGBT Thermal Characteristics Symbol Parameter Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge (Continued) Test Conditions VCE = 400 V, IC = 40 A, VGE = 15 V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge ©2011 Fairchild Semiconductor Corporation FGA40N65SMD Rev. C5 Min. Typ. Max Unit - 119 180 nC - 13 20 nC - 58 90 nC Unit TC = 25°C unless otherwise noted Test Conditions IF = 20 A IF =20 A, diF/dt = 200 A/μs 3 Min. Typ. Max TC = 25oC - 2.1 2.6 TC = 175oC - 1.7 - TC = 175oC - 96 - TC = 25oC - 42 - TC = 175oC - 200 - TC = 25oC - 3.6 - TC = 175oC - 8.0 - TC = 25oC - 76 - TC = 175oC - 800 - V uJ ns A nC www.fairchildsemi.com FGA40N65SMD — 650 V, 40 A Field Stop IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 120 o TC = 25 C 20V 15V 120 12V Collector Current, IC [A] 60 VGE = 8V 40 20 0 2 4 Collector-Emitter Voltage, VCE [V] VGE = 8V 40 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Collector Current, IC [A] 60 3.0 100 o TC = 25 C o TC = 175 C 80 60 40 20 0 1 2 3 Collector-Emitter Voltage, VCE [V] 20 Common Emitter VGE = 15V 80A 2.5 2.0 40A 1.5 IC = 20A 1.0 25 4 Figure 5. Saturation Voltage vs. VGE 50 75 100 125 150 o Case Temperature, TC [ C] 20 Common Emitter Common Emitter o TC = 25 C 16 12 8 40A 4 80A IC = 20A 4 8 12 16 Gate-Emitter Voltage, VGE [V] ©2011 Fairchild Semiconductor Corporation FGA40N65SMD Rev. C5 175 Figure 6. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 80 6 120 0 10V 20 Figure 3. Typical Saturation Voltage Characteristics 0 12V 100 10V 80 0 20V 15V o TC = 175 C 100 Collector Current, IC [A] Figure 2. Typical Output Characteristics o 12 8 4 80A 4 0 20 TC = 175 C 16 40A IC = 20A 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA40N65SMD — 650 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics 15 4000 Common Emitter Common Emitter VGE = 0V, f = 1MHz Gate-Emitter Voltage, VGE [V] o o TC = 25 C Capacitance [pF] 3000 Cies 2000 1000 Coes TC = 25 C 400V 12 VCC = 200V 300V 9 6 3 Cres 0 0.1 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 9. Turn-on Characteristics vs. Gate Resistance 0 40 80 Gate Charge, Qg [nC] Figure 10. Turn-off Characteristics vs. Gate Resistance 100 1000 td(off) Switching Time [ns] Switching Time [ns] tr td(on) 10 Common Emitter VCC = 400V, VGE = 15V IC = 40A 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 40A 10 o TC = 25 C o TC = 25 C o TC = 175 C 1 120 0 10 20 30 40 Gate Resistance, RG [Ω] o TC = 175 C 1 50 0 10 20 30 40 50 Gate Resistance, RG [Ω] Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn-on Characteristics vs. Collector Current 1000 5 Common Emitter VGE = 15V, RG = 6Ω o Eon Switching Time [ns] Switching Loss [mJ] TC = 25 C 1 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 40A 100 o TC = 175 C tr 10 td(on) o TC = 25 C o TC = 175 C 0.1 0 10 20 30 40 Gate Resistance, RG [Ω] ©2011 Fairchild Semiconductor Corporation FGA40N65SMD Rev. C5 1 20 50 30 40 50 60 70 80 Collector Current, IC [A] 5 www.fairchildsemi.com FGA40N65SMD — 650 V, 40 A Field Stop IGBT Typical Performance Characteristics FGA40N65SMD — 650 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current 1000 6 Common Emitter VGE = 15V, RG = 6Ω Eon o TC = 25 C Switching Loss [mJ] Switching Time [ns] td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 6Ω o TC = 175 C Eoff 1 o TC = 25 C o TC = 175 C 1 20 30 40 50 60 70 0.1 20 80 30 Figure 15. Load Current vs. Frequency 50 60 70 80 Figure 16. SOA Characteristics 300 250 Square Wave 100 o TJ