FGA40S65SH

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGA40S65SH 650 V, 40 A Field Stop Trench IGBT Features General Description • Maximum Junction Temperature : TJ = 175oC Using Fairchild’s proprietary trench design and advanced field stop IGBT technology, 650V field stop offers superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO. • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.4 V ( Typ.) @ IC = 40 A • 100% of the Parts tested for ILM(1) Applications • High Input Impedance • Tighten Parameter Distribution • Induction Heating, MWO • RoHS Compliant C G TO-3PN E G CE Absolute Maximum Ratings FGA40S65SH Unit VCES Symbol Collector to Emitter Voltage Description 650 V VGES Gate to Emitter Voltage  20 V Transient Gate to Emitter Voltage 30 V Collector Current @ TC = 25oC 80 A Collector Current @ TC = 100oC 40 A ILM (1) Pulsed Collector Current @ TC = 25oC 120 A ICM (2) Pulsed Collector Current 120 A IC IF IFM PD o Diode Forward Current @ TC = 25 C 40 A Diode Forward Current @ TC = 100oC 20 A 240 A Maximum Power Dissipation @ TC = 25oC 268 W Maximum Power Dissipation @ TC = 100oC Pulsed Diode Maximum Forward Current Operating Junction Temperature TJ Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 134 W -55 to +175 o C -55 to +175 o C 300 o C FGA40S65SH Unit Thermal Characteristics Symbol Parameter RJC (IGBT) Thermal Resistance, Junction to Case, Max. RJA Thermal Resistance, Junction to Ambient, Max. 0.56 40 o C/W oC/W Notes: 1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 35 , Inductive Load 2. Repetitive rating: Pulse width limited by max. junction temperature ©2016 Fairchild Semiconductor Corporation FGA40S65SH Rev. 1.1 1 www.fairchildsemi.com FGA40S65SH — 650 V, 40 A Field Stop Trench IGBT February 2016 Device Marking Device Package Reel Size Tape Width Qty per Tube FGA40S65SH FGA40S65SH TO-3PN - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 650 - - V BVCES TJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1mA - 0.65 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA IC = 40 mA, VCE = VGE On Characteristics VGE(th) VCE(sat) VFM G-E Threshold Voltage Collector to Emitter Saturation Voltage Diode Forward Voltage 4.0 5.3 7.5 V IC = 40 A, VGE = 15 V - 1.40 1.81 V IC = 40 A, VGE = 15 V, TC = 175oC - 1.65 - V IF = 20 A, TC = 25oC - 1.45 1.95 V IF = 20 A, TC = 175oC - 1.65 - V - 2012 - pF - 49 - pF - 26 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Switching Characteristics Td(on) Turn-On Delay Time - 19.2 - ns Tr Rise Time - 65.6 - ns Td(off) Turn-Off Delay Time - 68.8 - ns Tf Fall Time - 96.8 - ns Eon Turn-On Switching Loss - 194 - uJ Eoff Turn-Off Switching Loss - 388 - uJ VCC = 400 V, IC = 40 A, RG = 6 , VGE = 15 V, Resistive Load, TC = 25oC Ets Total Switching Loss - 592 - uJ Td(on) Turn-On Delay Time - 19.2 - ns Tr Rise Time - 87.2 - ns Td(off) Turn-Off Delay Time - 75.2 - ns Tf Fall Time Eon Turn-On Switching Loss Eoff Ets VCC = 400 V, IC = 40 A, RG = 6 , VGE = 15 V, ResistiveLoad, TC = 175oC - 158 - ns - 292 - uJ Turn-Off Switching Loss - 633 - uJ Total Switching Loss - 925 - uJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge ©2016 Fairchild Semiconductor Corporation FGA40S65SH Rev. 1.1 VCE = 400 V, IC = 40 A, VGE = 15 V 2 - 73 - nC - 13 - nC - 28 - nC www.fairchildsemi.com FGA40S65SH — 650 V, 40 A Field Stop Trench IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 120 120 o TC = 25 C 20V 20V o TC = 175 C 15V 15V 12V 10V 10V 90 Collector Current, IC [A] Collector Current, IC [A] 12V 60 VGE = 8V 30 90 60 30 0 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 0 5 Figure 3. Typical Saturation Voltage Characteristics Collector-Emitter Voltage, VCE [V] o TC = 25 C 90 o TC = 175 C 60 30 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 Figure 5. Saturation Voltage vs. VGE Common Emitter VGE = 15V 80A 2 40A IC = 20A 1 -100 -50 0 50 100 150 200 o Collector-Emitter Case Temperature, TC [ C] 0 Figure 6. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o o Collector-Emitter Voltage, VCE [V] TC = 25 C 16 12 40A 8 IC = 20A 80A 4 0 5 3 Common Emitter VGE = 15V Collector Current, IC [A] 1 2 3 4 Collector-Emitter Voltage, VCE [V] Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 120 Collector-Emitter Voltage, VCE [V] VGE = 8V TC = 175 C 16 12 IC = 20A 8 40A 80A 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] ©2016 Fairchild Semiconductor Corporation FGA40S65SH Rev. 1.1 20 4 3 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA40S65SH — 650 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics 15 10000 Common Emitter Gate-Emitter Voltage, VGE [V] o Capacitance [pF] Cies 1000 Coes 100 Common Emitter VGE = 0V, f = 1MHz Cres TC = 25 C 12 300V 400V VCC = 200V 9 6 3 o TC = 25 C 0 10 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 9. Turn-on Characteristics vs. Gate Resistance 20 40 60 Gate Charge, Qg [nC] Figure 10. Turn-off Characteristics vs. Gate Resistance 1000 1000 Common Emitter VCC = 400V, VGE = 15V IC = 40A td(off) o TC = 25 C Switching Time [ns] Switching Time [ns] 80 o TC = 175 C tr 100 td(on) tf 100 Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 25 C o TC = 175 C 10 10 0 10 20 30 40 Gate Resistance, RG [] 0 50 20 30 50 Figure 12. Turn-on Characteristics vs. Collector Current 400 1000 Eoff Switching Time [ns] Common Emitter VCC = 400V, VGE = 15V IC = 40A 100 tr 100 Eon td(on) 10 Common Emitter VGE = 15V, RG = 6 o o TC = 25 C TC = 25 C o o TC = 175 C TC = 175 C 50 40 Gate Resistance, RG [] Figure 11. Switching Loss vs. Gate Resistance Switching Loss [uJ] 10 0 10 20 30 40 Gate Resistance, RG [] ©2016 Fairchild Semiconductor Corporation FGA40S65SH Rev. 1.1 1 20 50 30 40 50 60 70 80 Collector Current, IC [A] 4 www.fairchildsemi.com FGA40S65SH — 650 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current 5000 Switching Loss [uJ] Switching Time [ns] 500 tf 100 td(off) Common Emitter VGE = 15V, RG = 6 1000 Eoff Eon Common Emitter VGE = 15V, RG = 6 o o TC = 25 C TC = 25 C 100 o o TC = 175 C TC = 175 C 10 20 30 40 50 60 Collector Current, IC [A] 70 50 20 80 30 40 50 60 70 80 Collector Current, IC [A] Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics 300 250 Square Wave 100 o 200 VGE = 15/0V, RG = 6 Collector Current, Ic [A] Collector Current, [A] TJ