FGA30N65SMD

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGA30N65SMD 650 V, 30 A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ =175oC Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1.98 V(Typ.) @ IC = 30 A • High Input Impedance • Fast Switching • Tighten Parameter Distribution • RoHS Compliant Applications • Solar Inverter • UPS, Welder, SMPS C G TO-3P G CE E Absolute Maximum Ratings Symbol Description Ratings Unit VCES Collector to Emitter Voltage 650 V VGES Gate to Emitter Voltage ± 20 V IC ICM (1) IF IFM (1) PD Collector Current @ TC = 25oC 60 A Collector Current @ TC = 100oC 30 A 90 A Diode Forward Current @ TC = 25oC 40 A Diode Forward Current @ TC = 100oC Pulsed Collector Current Pulsed Diode Maximum Forward Current o 20 A 120 A W Maximum Power Dissipation @ TC = 25 C 300 Maximum Power Dissipation @ TC = 100oC 150 W TJ Operating Junction Temperature -55 to +175 o Tstg Storage Temperature Range -55 to +175 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature ©2013 Fairchild Semiconductor Corporation FGA30N65SMD Rev. C4 1 www.fairchildsemi.com FGA30N65SMD — 650 V, 30 A Field Stop IGBT August 2014 Symbol Parameter Max. Unit RθJC(IGBT) Thermal Resistance, Junction to Case, Max. 0.5 o RθJC(Diode) Thermal Resistance, Junction to Case, Max. 1.5 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W C/W Package Marking and Ordering Information Part Number Top Mark FGA30N65SMD FGA30N65SMD Package Packing Method TO-3P Parameter Tape Width Quantity N/A N/A 30 Tube Electrical Characteristics of the IGBT Symbol Reel Size TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 650 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA ΔBVCES ΔTJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 μA - 0.29 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 μA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 250 μA, VCE = VGE 3.5 4.8 6.0 V IC = 30 A, VGE = 15 V - 1.98 2.5 V IC = 30 A, VGE = 15 V, TC = 175oC - 2.29 - V - 1350 - pF - 130 - pF - 45 - pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time - 14 - ns tr Rise Time - 28 - ns td(off) Turn-Off Delay Time - 102 - ns tf Fall Time - 10 - ns Eon Turn-On Switching Loss - 716 - uJ Eoff Turn-Off Switching Loss - 208 - uJ VCC = 400 V, IC = 30 A, RG = 6 Ω, VGE = 15 V, Inductive Load, TC = 25oC Ets Total Switching Loss - 924 - uJ td(on) Turn-On Delay Time - 13 - ns tr Rise Time - 28 - ns td(off) Turn-Off Delay Time - 108 - ns tf Fall Time - 17 - ns Eon Turn-On Switching Loss - 1125 - uJ Eoff Turn-Off Switching Loss - 572 - uJ Ets Total Switching Loss - 1697 - uJ ©2013 Fairchild Semiconductor Corporation FGA30N65SMD Rev. C4 VCC = 400 V, IC = 30 A, RG = 6 Ω, VGE = 15 V, Inductive Load, TC = 175oC 2 www.fairchildsemi.com FGA30N65SMD — 650 V, 30 A Field Stop IGBT Thermal Characteristics Symbol Parameter Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge Test Conditions VCE = 400 V, IC = 30 A, VGE = 15 V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge ©2013 Fairchild Semiconductor Corporation FGA30N65SMD Rev. C4 (Continued) Min. Typ. Max Unit - 87 - nC - 9.1 - nC - 45 - nC Unit TC = 25°C unless otherwise noted Test Conditions IF = 20 A IF =20 A, diF/dt = 200 A/μs 3 Min. Typ. Max TC = 25oC - 2.1 2.7 TC = 175oC - 1.83 - TC = 175oC - 55 - TC = 25oC TC = 175oC - 35 - - 182 - TC = 25oC - 59 - TC = 175oC - 587 - V uJ ns nC www.fairchildsemi.com FGA30N65SMD — 650 V, 30 A Field Stop IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 90 o TC = 25 C 15V Collector Current, IC [A] 75 TC = 175 C 12V 60 45 30 VGE = 8V 1.0 2.0 3.0 4.0 5.0 Collector-Emitter Voltage, VCE [V] 45 0 0.0 4.0 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V o TC = 25 C o TC = 175 C 45 30 15 0 0.0 1.0 2.0 3.0 4.0 Collector-Emitter Voltage, VCE [V] 1.0 2.0 3.0 4.0 5.0 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 3.5 60A 3.0 2.5 30A 2.0 IC = 15A 1.5 1.0 25 5.0 Figure 5. Saturation Voltage vs. VGE 50 75 100 125 150 o Case Temperature, TC [ C] Common Emitter Common Emitter o o Collector-Emitter Voltage, VCE [V] TC = 25 C 15 30A IC = 15A 10 60A 5 4 8 12 16 Gate-Emitter Voltage, VGE [V] ©2013 Fairchild Semiconductor Corporation FGA30N65SMD Rev. C4 175 Figure 6. Saturation Voltage vs. VGE 20 20 6.0 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 90 Collector Current, IC [A] VGE = 8V 30 6.0 Figure 3. Typical Saturation Voltage Characteristics Collector-Emitter Voltage, VCE [V] 10V 15 0 0.0 60 12V 60 15 0 15V 75 10V 75 20V o 20V Collector Current, IC [A] 90 Figure 2. Typical Output Characteristics TC = 175 C 16 12 4 15A 8 60A 4 0 20 IC = 30A 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA30N65SMD — 650 V, 30 A Field Stop IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics 15 10000 Common Emitter Gate-Emitter Voltage, VGE [V] Capacitance [pF] o Cies 1000 Coes 100 Common Emitter VGE = 0V, f = 1MHz 200V VCC = 100V 9 o 6 3 0 5 10 15 20 25 Collector-Emitter Voltage, VCE [V] 30 Figure 9. Turn-on Characteristics vs. Gate Resistance 0 25 50 75 Gate Charge, Qg [nC] 1000 td(off) Switching Time [ns] Switching Time [ns] tr td(on) 10 Common Emitter VCC = 400V, VGE = 15V IC = 30A 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 30A 10 o o TC = 25 C TC = 25 C o o TC = 175 C 0 10 20 30 Gate Resistance, RG [Ω] 40 1 50 Figure 11. Switching Loss vs. Gate Resistance 0 10 20 30 Gate Resistance, RG [Ω] 40 50 500 Eon 100 Switching Time [ns] Switching Loss [uJ] TC = 175 C Figure 12. Turn-on Characteristics vs. Collector Current 10000 1000 Eoff 100 Common Emitter VCC = 400V, VGE = 15V IC = 30A tr td(on) 10 Common Emitter VGE = 15V, RG = 6Ω o o TC = 25 C TC = 25 C o o TC = 175 C TC = 175 C 10 100 Figure 10. Turn-off Characteristics vs. Gate Resistance 100 3 300V Cres TC = 25 C 20 TC = 25 C 12 0 10 20 30 40 Gate Resistance, RG [Ω] ©2013 Fairchild Semiconductor Corporation FGA30N65SMD Rev. C4 1 10 50 20 30 40 50 60 70 80 Collector Current, IC [A] 5 www.fairchildsemi.com FGA30N65SMD — 650 V, 30 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current 500 10000 1000 Switching Loss [uJ] Switching Time [ns] Eon td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 6Ω o Eoff 100 Common Emitter VGE = 15V, RG = 6Ω 10 o TC = 25 C TC = 25 C o o TC = 175 C 1 10 20 30 40 50 60 TC = 175 C 70 1 10 80 20 30 Collector Current, IC [A] Collector Current, IC [A] Figure 15. Load Current Vs. Frequency 40 Figure 16. SOA Characteristics 100 200 10μs Square Wave o 160 100μs VGE = 15/0V, RG = 6Ω Collector Current, Ic [A] Collector Current, [A] TJ