FGD3040G2-F085

FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 FGB3040G2-F085 / FGD3040G2-F085 FGP3040G2-F085 / FGI3040G2-F085 EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT Features Applications „ SCIS Energy = 300mJ at TJ = 25oC „ Automotive lgnition Coil Driver Circuits „ Logic Level Gate Drive „ Coil On Plug Applications „ Qualified to AEC Q101 „ RoHS Compliant Package Symbol JEDEC TO-263AB D²-Pak JEDEC TO-220AB E C G COLLECTOR G E R1 JEDEC TO-252AA D-Pak JEDEC TO-262AA E GATE C G R2 G EMITTER E COLLECTOR (FLANGE) Device Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) Ratings 400 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 28 V ESCIS25 Self Clamping Inductive Switching Energy (Note 1) 300 mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 170 mJ IC25 Collector Current Continuous, at VGE = 5.0V, TC = 25°C 41 A IC110 Collector Current Continuous, at VGE = 5.0V, TC = 110°C 25.6 A VGEM Gate to Emitter Voltage Continuous ±10 V Power Dissipation Total, at TC = 25°C 150 W 1 W/oC PD Power Dissipation Derating, for TC > 25oC TJ Operating Junction Temperature Range -55 to +175 o C TSTG Storage Junction Temperature Range -55 to +175 o C TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 o C TPKG Reflow soldering according to JESD020C 260 o C ESD HBM-Electrostatic Discharge Voltage at100pF, 1500Ω 4 kV CDM-Electrostatic Discharge Voltage at 1Ω 2 kV @2014 Semiconductor Components Industries, LLC. August-2017, Rev. 3 Publication Order Number: FGB3040G2-F085/D Device Marking Device Package FGB3040G2 FGB3040G2-F085 FGD3040G2 FGD3040G2-F085 TO-263AB TO-252AA FGP3040G2 FGI3040G2 FGP3040G2-F085 TO-220AB FGI3040G2-F085 TO-262AA Reel Size 330mm Tape Width 24mm Quantity 800 330mm Tube 16mm N/A 2500 50 Tube N/A 50 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER ICE = 2mA, VGE = 0, Collector to Emitter Breakdown Voltage RGE = 1KΩ, TJ = -40 to 150oC 370 400 430 V BVCES ICE = 10mA, VGE = 0V, Collector to Emitter Breakdown Voltage RGE = 0, TJ = -40 to 150oC 390 420 450 V BVECS Emitter to Collector Breakdown Voltage ICE = -20mA, VGE = 0V, TJ = 25°C 28 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ±2mA ±12 ±14 - V - - 25 μA - - 1 mA - - 1 - - 40 - 120 - Ω 10K - 30K Ω ICER Collector to Emitter Leakage Current IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance VCE = 250V, RGE = 1KΩ VEC = 24V, TJ = 25oC TJ = 150oC TJ = 25oC TJ = 150oC mA On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V, L = 3.0 mHy,RG = 1KΩ, Self Clamped Inductive Switching ESCIS VGE = 5V, (Note 1) TJ = 25oC - 1.15 1.25 V - 1.35 1.50 V TJ = 150oC - 1.68 1.85 V TJ = 25°C - - 300 mJ - - 1 oC/W TJ = 150oC Thermal Characteristics RθJC Thermal Resistance Junction to Case Notes: 1: Self Clamping Inductive Switching Energy (ESCIS25) of 300 mJ is based on the test conditions that starting Tj=25oC; L=3mHy, ISCIS=14.2A,VCC=100V during inductor charging and VCC=0V during the time in clamp. 2: Self Clamping Inductive Switching Energy (ESCIS150) of 170 mJ is based on the test conditions that starting Tj=150oC; L=3mHy, ISCIS=10.8A,VCC=100V during inductor charging and VCC=0V during the time in clamp. www.onsemi.com 2 FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 Package Marking and Ordering Information Symbol Parameter Test Conditions Min Typ - 21 Max Units Dynamic Characteristics QG(ON) Gate Charge ICE = 10A, VCE = 12V, VGE = 5V - nC 1.3 1.7 2.2 0.75 1.2 1.8 VCE = 12V, ICE = 10A - 2.8 - V Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω VGE = 5V, RG = 1KΩ Current Rise Time-Resistive TJ = 25oC, - 0.9 4 μs - 1.9 7 μs - 4.8 15 μs - 2.0 15 μs VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE, VGEP Gate to Emitter Plateau Voltage TJ = 25oC TJ = 150oC V Switching Characteristics td(ON)R trR td(OFF)L tfL Current Turn-Off Delay Time-Inductive VCE = 300V, L = 1mH, VGE = 5V, RG = 1KΩ Current Fall Time-Inductive ICE = 6.5A, TJ = 25oC, www.onsemi.com 3 FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 Electrical Characteristics TA = 25°C unless otherwise noted o TJ = 150 C 10 1 SCIS Curves valid for Vclamp Voltages of