Is Now Part of
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FGH30S130P
1300 V, 30 A 阳极短路 IGBT
特性
概述
• 高速开关
Fairchild阳极短路IGBT采用先进的场截止沟槽和阳极短路技术,
可以为软开关应用提供卓越的导通和开关性能。该器件可并联配
置,具有极佳的雪崩能力。该器件为感应加热和微波炉而设计。
• 低饱和电压:VCE(sat) = 1.75 V @ IC = 30 A
• 高输入阻抗
• 符合 RoHS 标准
应用
• 感应加热,微波炉
E
C
C
G
G
COLLECTOR
(FLANGE)
E
绝对最大额定值 TC = 25°C 除非另有说明
符号
额定值
单位
集电极 - 发射极之间电压
1300
V
VGES
栅极-发射极间电压
±25
V
IC
集电极电流
@ TC = 25°C
60
A
集电极电流
@ TC = 100°C
30
A
ICM (1)
集电极脉冲电流
90
A
IF
二极管正向连续电流
@ TC = 25°C
60
A
IF
二极管正向连续电流
@ TC = 100°C
30
A
PD
最大功耗
@ TC = 25°C
500
W
最大功耗
@ TC = 100°C
250
W
VCES
描述
TJ
工作结温
-55 至 +175
°C
Tstg
存储温度范围
-55 至 +175
°C
TL
用于焊接的最大引脚温度,距离外壳 1/8",持续 5 秒
300
°C
热性能
符号
参数
典型值
最大值
单位
RθJC(IGBT)
结至外壳热阻最大值
--
0.3
°C/W
RθJA
结至环境热阻最大值
--
40
°C/W
注:
1: 受限于最大结温
©2012 飞兆半导体公司
FGH30S130P Rev. C5
1
www.fairchildsemi.com
FGH30S130P — 1300 V, 30 A 阳极短路 IGBT
2015 年 3 月
器件标识
器件
封装
卷尺寸
带宽
数量
FGH30S130P
FGH30S130P
TO-247
-
-
30
IGBT 电气特性
TC = 25°C 除非另有说明
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
ICES
集电极切断电流
VCE = 1300, VGE = 0 V
-
-
1
mA
IGES
G-E 漏电流
VGE = VGES, VCE = 0 V
-
-
±500
nA
G-E 阈值电压
IC = 30 mA, VCE = VGE
4.5
6.0
7.5
V
IC = 30 A, VGE = 15 V
TC = 25°C
-
1.75
2.3
V
IC = 30 A, VGE = 15 V,
TC = 125°C
-
1.85
-
V
IC = 30 A, VGE = 15 V,
TC = 175°C
-
1.9
-
V
IF = 30 A, TC = 25°C
-
1.7
2.2
V
IF = 30 A, TC = 175°C
-
2.1
-
V
-
3345
-
pF
-
75
-
pF
导通特性
VGE(th)
VCE(sat)
VFM
集电极-发射极间饱和电压
二极管正向电压
动态特性
Cies
输入电容
Coes
输出电容
Cres
反向传输电容
-
60
-
pF
td(on)
导通延迟时间
-
39
-
ns
VCE = 30 V, VGE = 0 V,
f = 1 MHz
开关特性
tr
上升时间
-
360
-
ns
td(off)
关断延迟时间
-
620
-
ns
tf
下降时间
-
160
210
ns
Eon
导通开关损耗
-
1.3
-
mJ
Eoff
关断开关损耗
-
1.22
1.6
mJ
Ets
总开关损耗
-
2.52
-
mJ
VCC = 600 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V,
感性负载, TC = 25°C
td(on)
导通延迟时间
-
38
-
ns
tr
上升时间
-
375
-
ns
td(off)
关断延迟时间
-
635
-
ns
tf
下降时间
-
270
-
ns
Eon
导通开关损耗
-
1.59
-
mJ
Eoff
关断开关损耗
-
1.78
-
mJ
Ets
总开关损耗
-
3.37
-
mJ
Qg
总栅极电荷
-
372.3
-
nC
Qge
栅极-发射极间电荷
-
18.7
-
nC
Qgc
栅极-集电极间电荷
-
156.2
-
nC
©2012 飞兆半导体公司
FGH30S130P Rev. C5
VCC = 600 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V,
感性负载, TC =175°C
VCE = 600 V, IC = 30 A,
VGE = 15 V
2
www.fairchildsemi.com
FGH30S130P — 1300 V, 30 A 阳极短路 IGBT
封装标识与定购信息
图 1. 典型输出特性
图 2. 典型输出特性
200
200
o
20V
TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]
12V
160
o
20V
T C = 175 C
15V
VGE = 17V
10V
120
80
9V
40
15V
12V
160
VGE = 17V
120
10V
80
9V
8V
40
8V
7V
7V
0
0.0
0
0
2
4
6
Collector-Emitter Voltage, VCE [V]
8
图 3. 典型饱和电压
200
Common Emitter
VCE = 20V
o
Collector Current, IC [A]
Collector Current, IC [A]
Common Emitter
VGE = 15V
TC = 25 C
o
TC = 175 C
120
80
40
0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter Voltage, VCE [V]
o
120
80
40
0
0.0
20
Collector-Emitter Voltage, V CE [V]
60A
2.5
30A
IC = 15A
1.5
1.0
25
3.0
6.0
9.0
12.0
Gate-Emitter Voltage,V GE [V]
15.0
图 6. 饱和电压与 VGE 的关系壳温的关系
Common Emitter
VGE = 15V
2.0
TC = 25 C
TC = 175 C
3.5
3.0
o
160
6.0
图 5. 饱和电压与可变电流强度下
Collector-Emitter Voltage, VCE [V]
8.0
图 4. 传输特性
200
160
2.0
4.0
6.0
Collector-Emitter Voltage, V CE [V]
Common Emitter
o
T C = 25 C
16
12
8
60A
30A
4
IC = 15A
50
©2012 飞兆半导体公司
FGH30S130P Rev. C5
75
100
125
150
o
Case Temperature, TC [ C]
0
175
3
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGH30S130P — 1300 V, 30 A 阳极短路 IGBT
典型性能特征
图 7. 饱和电压与 VGE 的关系
图 8. 电容特性
20
10000
Cies
o
T C = 175 C
16
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
Common Emitter
12
8
30A
1000
Coes
100
60A
4
Common Emitter
VGE = 0V, f = 1MHz
IC = 15A
Cres
o
T C = 25 C
0
10
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
1
图 9. 栅极电荷特性
30
20
10
Collector-Emitter Voltage, V CE [V]
图 10. SOA 特性
15
Common Emitter
100
400V
600V
12
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
o
TC = 25 C
VCC = 200V
9
6
3
10s
100s
10
1ms
10 ms
DC
1
0.1
*Notes:
o
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0
0
50
100 150 200 250
Gate Charge, Qg [nC]
300
0.01
0.1
350
图 11. 导通特性与栅极电阻的关系
图 12. 关断特性与栅极电阻的关系
10000
500
Common Emitter
VCC = 600V, VGE = 15V
IC = 30A
tr
o
Switching Time [ns]
Switching Time [ns]
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
100
td(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 30A
TC = 25 C
o
TC = 175 C
td(off)
1000
tf
o
TC = 25 C
o
TC = 175 C
20
10
©2012 飞兆半导体公司
FGH30S130P Rev. C5
20
30
40
50
60
Gate Resistance, RG []
100
70
4
0
10
20
30
40
50
Gate Resistance, RG []
60
70
www.fairchildsemi.com
FGH30S130P — 1300 V, 30 A 阳极短路 IGBT
典型性能特征
图 13. 导通特性与集电极电流的关系
图 14. 关断特性与集电极电流的关系
2500
2500
Common Emitter
VGE = 15V, RG = 10
Common Emitter
VGE = 15V, RG = 10
1000
TC = 25oC
TC = 175 C
Switching Time [ns]
Switching Time [ns]
TC = 25oC
tr
o
100
td(on)
o
1000
TC = 175 C
td(off)
tf
100
10
20
40
20
60
Collector Current, IC [A]
图 15. 开关损耗与栅极电阻的关系
30k
Common Emitter
VCC = 600V, VGE = 15V
Common Emitter
VGE = 15V, RG = 10
10k
IC = 30A
o
Switching Loss [uJ]
TC = 25 C
Switching Loss [mJ]
60
图 16. 开关损耗与集电极电流的关系
10
o
TC = 175 C
{
} Eon
Eoff
1
40
Collector Current, IC [A]
o
T C = 25 C
T C = 175oC
1k
{
{
Eoff
Eon
0.5
100
0
10
20
30
40
50
60
Gate Resistance, RG []
70
0
80
图 17. 关断开关 SOA 特性
20
30
40
50
Collector Current, IC [A]
60
70
图 18. 正向特性
80
Forward Current, IF [A]
100
Collector Current, IC [A]
10
10
Safe Operating Area
10
FGH30S130P Rev. C5
o
TJ = 175 C
o
TC = 25 C
o
TC = 175 C
100
0.5
1000
0
Collector-Emitter Voltage, VCE [V]
©2012 飞兆半导体公司
10
1
o
VGE = 15V, TC = 175 C
1
1
o
TJ = 25 C
5
1
Forward Voltage, VF [V]
2
www.fairchildsemi.com
FGH30S130P — 1300 V, 30 A 阳极短路 IGBT
典型性能特征
FGH30S130P — 1300 V, 30 A 阳极短路 IGBT
图 19. IGBT 的瞬态热阻抗
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01 single pulse
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
©2012 飞兆半导体公司
FGH30S130P Rev. C5
6
www.fairchildsemi.com
FGH30S130P — 1300 V, 30 A 阳极短路 IGBT
机械尺寸
图 20. TO-247,模塑, 3 引脚, JEDEC 变量 AB
封装图纸是作为一项服务提供给考虑飞兆半导体元件的客户的。图纸可能会在没有任何通知的情况下做出一些改动。请注意图纸上的版
本或日期,如有疑问,请联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆半导体全球范围内的条款与条件,尤其是其
中涉及飞兆半导体产品保修的部分。
随时访问飞兆半导体在线封装网页,可以获取最新的封装图纸:
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尺寸单位为毫米
©2012 飞兆半导体公司
FGH30S130P Rev. C5
7
www.fairchildsemi.com
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Rev. I68
©2012 飞兆半导体公司
FGH30S130P Rev. C5
8
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FGH30S130P — 1300 V, 30 A 阳极短路 IGBT
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