FGH30S130P

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGH30S130P 1300 V, 30 A 阳极短路 IGBT 特性 概述 • 高速开关 Fairchild阳极短路IGBT采用先进的场截止沟槽和阳极短路技术， 可以为软开关应用提供卓越的导通和开关性能。该器件可并联配 置，具有极佳的雪崩能力。该器件为感应加热和微波炉而设计。 • 低饱和电压：VCE(sat) = 1.75 V @ IC = 30 A • 高输入阻抗 • 符合 RoHS 标准 应用 • 感应加热，微波炉 E C C G G COLLECTOR (FLANGE) E 绝对最大额定值 TC = 25°C 除非另有说明 符号 额定值 单位 集电极 - 发射极之间电压 1300 V VGES 栅极－发射极间电压 ±25 V IC 集电极电流 @ TC = 25°C 60 A 集电极电流 @ TC = 100°C 30 A ICM (1) 集电极脉冲电流 90 A IF 二极管正向连续电流 @ TC = 25°C 60 A IF 二极管正向连续电流 @ TC = 100°C 30 A PD 最大功耗 @ TC = 25°C 500 W 最大功耗 @ TC = 100°C 250 W VCES 描述 TJ 工作结温 -55 至 +175 °C Tstg 存储温度范围 -55 至 +175 °C TL 用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒 300 °C 热性能 符号 参数 典型值 最大值 单位 RθJC(IGBT) 结至外壳热阻最大值 -- 0.3 °C/W RθJA 结至环境热阻最大值 -- 40 °C/W 注： 1: 受限于最大结温 ©2012 飞兆半导体公司 FGH30S130P Rev. C5 1 www.fairchildsemi.com FGH30S130P — 1300 V, 30 A 阳极短路 IGBT 2015 年 3 月 器件标识 器件 封装 卷尺寸 带宽 数量 FGH30S130P FGH30S130P TO-247 - - 30 IGBT 电气特性 TC = 25°C 除非另有说明 符号 参数 测试条件 最小值 典型值 最大值 单位 关断特性 ICES 集电极切断电流 VCE = 1300, VGE = 0 V - - 1 mA IGES G-E 漏电流 VGE = VGES, VCE = 0 V - - ±500 nA G-E 阈值电压 IC = 30 mA, VCE = VGE 4.5 6.0 7.5 V IC = 30 A, VGE = 15 V TC = 25°C - 1.75 2.3 V IC = 30 A, VGE = 15 V, TC = 125°C - 1.85 - V IC = 30 A, VGE = 15 V, TC = 175°C - 1.9 - V IF = 30 A, TC = 25°C - 1.7 2.2 V IF = 30 A, TC = 175°C - 2.1 - V - 3345 - pF - 75 - pF 导通特性 VGE(th) VCE(sat) VFM 集电极－发射极间饱和电压 二极管正向电压 动态特性 Cies 输入电容 Coes 输出电容 Cres 反向传输电容 - 60 - pF td(on) 导通延迟时间 - 39 - ns VCE = 30 V, VGE = 0 V, f = 1 MHz 开关特性 tr 上升时间 - 360 - ns td(off) 关断延迟时间 - 620 - ns tf 下降时间 - 160 210 ns Eon 导通开关损耗 - 1.3 - mJ Eoff 关断开关损耗 - 1.22 1.6 mJ Ets 总开关损耗 - 2.52 - mJ VCC = 600 V, IC = 30 A, RG = 10 Ω, VGE = 15 V, 感性负载， TC = 25°C td(on) 导通延迟时间 - 38 - ns tr 上升时间 - 375 - ns td(off) 关断延迟时间 - 635 - ns tf 下降时间 - 270 - ns Eon 导通开关损耗 - 1.59 - mJ Eoff 关断开关损耗 - 1.78 - mJ Ets 总开关损耗 - 3.37 - mJ Qg 总栅极电荷 - 372.3 - nC Qge 栅极－发射极间电荷 - 18.7 - nC Qgc 栅极－集电极间电荷 - 156.2 - nC ©2012 飞兆半导体公司 FGH30S130P Rev. C5 VCC = 600 V, IC = 30 A, RG = 10 Ω, VGE = 15 V, 感性负载， TC =175°C VCE = 600 V, IC = 30 A, VGE = 15 V 2 www.fairchildsemi.com FGH30S130P — 1300 V, 30 A 阳极短路 IGBT 封装标识与定购信息 图 1. 典型输出特性 图 2. 典型输出特性 200 200 o 20V TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 12V 160 o 20V T C = 175 C 15V VGE = 17V 10V 120 80 9V 40 15V 12V 160 VGE = 17V 120 10V 80 9V 8V 40 8V 7V 7V 0 0.0 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 8 图 3. 典型饱和电压 200 Common Emitter VCE = 20V o Collector Current, IC [A] Collector Current, IC [A] Common Emitter VGE = 15V TC = 25 C o TC = 175 C 120 80 40 0 0.0 1.0 2.0 3.0 4.0 5.0 Collector-Emitter Voltage, VCE [V] o 120 80 40 0 0.0 20 Collector-Emitter Voltage, V CE [V] 60A 2.5 30A IC = 15A 1.5 1.0 25 3.0 6.0 9.0 12.0 Gate-Emitter Voltage,V GE [V] 15.0 图 6. 饱和电压与 VGE 的关系壳温的关系 Common Emitter VGE = 15V 2.0 TC = 25 C TC = 175 C 3.5 3.0 o 160 6.0 图 5. 饱和电压与可变电流强度下 Collector-Emitter Voltage, VCE [V] 8.0 图 4. 传输特性 200 160 2.0 4.0 6.0 Collector-Emitter Voltage, V CE [V] Common Emitter o T C = 25 C 16 12 8 60A 30A 4 IC = 15A 50 ©2012 飞兆半导体公司 FGH30S130P Rev. C5 75 100 125 150 o Case Temperature, TC [ C] 0 175 3 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH30S130P — 1300 V, 30 A 阳极短路 IGBT 典型性能特征 图 7. 饱和电压与 VGE 的关系 图 8. 电容特性 20 10000 Cies o T C = 175 C 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] Common Emitter 12 8 30A 1000 Coes 100 60A 4 Common Emitter VGE = 0V, f = 1MHz IC = 15A Cres o T C = 25 C 0 10 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 1 图 9. 栅极电荷特性 30 20 10 Collector-Emitter Voltage, V CE [V] 图 10. SOA 特性 15 Common Emitter 100 400V 600V 12 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o TC = 25 C VCC = 200V 9 6 3 10s 100s 10 1ms 10 ms DC 1 0.1 *Notes: o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0 0 50 100 150 200 250 Gate Charge, Qg [nC] 300 0.01 0.1 350 图 11. 导通特性与栅极电阻的关系 图 12. 关断特性与栅极电阻的关系 10000 500 Common Emitter VCC = 600V, VGE = 15V IC = 30A tr o Switching Time [ns] Switching Time [ns] 1 10 100 1000 Collector-Emitter Voltage, VCE [V] 100 td(on) Common Emitter VCC = 600V, VGE = 15V IC = 30A TC = 25 C o TC = 175 C td(off) 1000 tf o TC = 25 C o TC = 175 C 20 10 ©2012 飞兆半导体公司 FGH30S130P Rev. C5 20 30 40 50 60 Gate Resistance, RG [] 100 70 4 0 10 20 30 40 50 Gate Resistance, RG [] 60 70 www.fairchildsemi.com FGH30S130P — 1300 V, 30 A 阳极短路 IGBT 典型性能特征 图 13. 导通特性与集电极电流的关系 图 14. 关断特性与集电极电流的关系 2500 2500 Common Emitter VGE = 15V, RG = 10 Common Emitter VGE = 15V, RG = 10 1000 TC = 25oC TC = 175 C Switching Time [ns] Switching Time [ns] TC = 25oC tr o 100 td(on) o 1000 TC = 175 C td(off) tf 100 10 20 40 20 60 Collector Current, IC [A] 图 15. 开关损耗与栅极电阻的关系 30k Common Emitter VCC = 600V, VGE = 15V Common Emitter VGE = 15V, RG = 10 10k IC = 30A o Switching Loss [uJ] TC = 25 C Switching Loss [mJ] 60 图 16. 开关损耗与集电极电流的关系 10 o TC = 175 C { } Eon Eoff 1 40 Collector Current, IC [A] o T C = 25 C T C = 175oC 1k { { Eoff Eon 0.5 100 0 10 20 30 40 50 60 Gate Resistance, RG [] 70 0 80 图 17. 关断开关 SOA 特性 20 30 40 50 Collector Current, IC [A] 60 70 图 18. 正向特性 80 Forward Current, IF [A] 100 Collector Current, IC [A] 10 10 Safe Operating Area 10 FGH30S130P Rev. C5 o TJ = 175 C o TC = 25 C o TC = 175 C 100 0.5 1000 0 Collector-Emitter Voltage, VCE [V] ©2012 飞兆半导体公司 10 1 o VGE = 15V, TC = 175 C 1 1 o TJ = 25 C 5 1 Forward Voltage, VF [V] 2 www.fairchildsemi.com FGH30S130P — 1300 V, 30 A 阳极短路 IGBT 典型性能特征 FGH30S130P — 1300 V, 30 A 阳极短路 IGBT 图 19. IGBT 的瞬态热阻抗 Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] ©2012 飞兆半导体公司 FGH30S130P Rev. C5 6 www.fairchildsemi.com FGH30S130P — 1300 V, 30 A 阳极短路 IGBT 机械尺寸 图 20. TO-247，模塑， 3 引脚， JEDEC 变量 AB 封装图纸是作为一项服务提供给考虑飞兆半导体元件的客户的。图纸可能会在没有任何通知的情况下做出一些改动。请注意图纸上的版 本或日期，如有疑问，请联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆半导体全球范围内的条款与条件，尤其是其 中涉及飞兆半导体产品保修的部分。 随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸： http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003 尺寸单位为毫米 ©2012 飞兆半导体公司 FGH30S130P Rev. 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