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FGH30T65UPDT
650V, 30A Field Stop Trench IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
General Description
• Positive Temperaure Co-efficient for Easy Parallel Operating
Using novel field stop trench IGBT technology, Fairchild’s new
series of field stop trench IGBTs offer the optimum performance
for solar inverter , UPS and digital power generator where low
conduction and switching losses are essential.
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.65 V (Typ.) @ IC = 30 A
• 100% of Parts Tested ILM(2)
• High Input Impedance
• Tightened Parameter Distribution
Applications
• RoHS Compliant
• Solar Inverter, UPS, Digital Power Generator
• Short Circuit Ruggedness > 5 us @ 25oC
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
Description
Ratings
Unit
Collector to Emitter Voltage
650
V
Gate to Emitter Voltage
± 20
V
± 25
V
Collector Current
Transient Gate to Emitter Voltage
@ TC = 25oC
60
A
Collector Current
@ TC = 100oC
30
A
90
A
ICM(1)
Pulsed Collector Current
ILM(2)
Clamped Inductive Load Current
IF
IFM(1)
PD
SCWT
Diode Forward Current
@ TC = 25oC
Diode Forward Current
@ TC = 100oC
Pulsed Diode Maximum Forward Current
o
90
A
60
A
30
A
150
A
Maximum Power Dissipation
@ TC = 25 C
250
W
Maximum Power Dissipation
@ TC = 100oC
125
W
Short Circuit Withstand Time
@ TC = 25oC
5
us
TJ
Operating Junction Temperature
-55 to +175
o
Tstg
Storage Temperature Range
-55 to +175
oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
o
300
C
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
2: IC = 90 A, VCC = 400 V, Rg = 20 Ω
Thermal Characteristics
Symbol
RθJC(IGBT)
Parameter
Thermal Resistance, Junction to Case
Typ.
Max.
-
0.60
Unit
o
C/W
RθJC(Diode)
Thermal Resistance, Junction to Case
-
1.2
oC/W
RθJA
Thermal Resistance, Junction to Ambient
-
40
o
©2013 Fairchild Semiconductor Corporation
FGH30T65UPDT Rev. C1
1
C/W
www.fairchildsemi.com
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
November 2013
Part Number
Top Mark
Package
Packing
Method
FGH30T65UPD_F155
FGH30T65UPD
TO-247 G03
Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Reel Size Tape Width Quantity
N/A
N/A
30
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
650
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage
VGE = 0 V, IC = 1 mA
∆BVCES
∆ΤJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 uA
-
0.65
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
250
µA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±400
nA
4.0
6.0
7.5
V
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 30 mA, VCE = VGE
IC = 30 A, VGE = 15 V
-
1.65
2.3
V
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 30 A, VGE = 15 V,
TC = 175oC
-
2.1
-
V
-
2280
-
pF
-
85
-
pF
-
40
-
pF
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
-
22
-
ns
tr
Rise Time
-
26
-
ns
td(off)
Turn-Off Delay Time
-
139
-
ns
tf
Fall Time
-
18
-
ns
Eon
Turn-On Switching Loss
-
0.76
-
mJ
Eoff
Turn-Off Switching Loss
-
0.40
-
mJ
VCC = 400 V, IC = 30 A,
RG = 8 Ω, VGE = 15 V,
Inductive Load, TC = 25oC
Ets
Total Switching Loss
-
1.16
-
mJ
td(on)
Turn-On Delay Time
-
22
-
ns
tr
Rise Time
-
30
-
ns
td(off)
Turn-Off Delay Time
-
151
-
ns
tf
Fall Time
-
19
-
ns
Eon
Turn-On Switching Loss
-
1.20
-
mJ
Eoff
Turn-Off Switching Loss
-
0.53
-
mJ
Ets
Total Switching Loss
-
1.73
-
mJ
Tsc
Short Circuit Withstand Time
5
-
-
us
Qg
Total Gate Charge
-
155
-
nC
-
21
-
nC
-
91
-
nC
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2013 Fairchild Semiconductor Corporation
FGH30T65UPDT Rev. C1
VCC = 400 V, IC = 30 A,
RG = 8 Ω, VGE = 15V,
Inductive Load, TC = 175oC
VGE = 15 V, VCC < 400 V,
Rg = 10 Ω
VCE = 400 V, IC = 30 A,
VGE = 15 V
2
www.fairchildsemi.com
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
Package Marking and Ordering Information
Symbol
Parameter
VFM
Diode Forward Voltage
Erec
Reverse Recovery Energy
TC = 25°C unless otherwise noted
Test Conditions
IF = 30 A
Min.
Typ.
Max
TC = 25oC
-
2.3
3.0
TC = 175oC
-
1.9
-
TC = 175oC
-
35
43
o
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
©2013 Fairchild Semiconductor Corporation
FGH30T65UPDT Rev. C1
IF = 30 A, diF/dt = 200 A/µs
3
TC = 25 C
-
33
TC = 175oC
-
148
TC = 25oC
-
57
TC = 175oC
-
560
Unit
V
uJ
80
ns
nC
www.fairchildsemi.com
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
Electrical Characteristics of the Diode
Figure 1. Typical Output Characteristics
90
Figure 2. Typical Output Characteristics
90
VGE= 20 V
VGE= 20 V
15 V
15 V
Collector Current, IC [A]
Collector Current, IC [A]
12 V
60
10 V
30
12 V
60
10 V
30
8V
o
TC = 25 C
8V
0
0
o
TC = 175 C
2
4
6
8
Collector-Emitter Voltage, VCE [V]
0
10
Figure 3. Typical Saturation Voltage
Characteristics
60
30
Common Emitter
VGE = 15 V
o
TC = 25 C
o
TC = 175 C
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
Common Emitter
VGE = 15 V
3.0
60 A
2.5
2.0
30 A
1.5
IC = 15 A
1.0
25
5
Figure 5. Saturation Voltage vs. VGE
50
75
100
125
150
o
Case Temperature, TC [ C]
20
Common Emitter
Collector-Emitter Voltage, VCE [V]
Common Emitter
o
TC = 25 C
16
60 A
12
30 A
8
IC = 15 A
4
0
175
Figure 6. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
10
3.5
Collector-Emitter Voltage, VCE [V]
Collector Current, IC [A]
2
4
6
8
Collector-Emitter Voltage, VCE [V]
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Leve
90
0
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
©2013 Fairchild Semiconductor Corporation
FGH30T65UPDT Rev. C1
o
TC = 175 C
16
60 A
12
30 A
8
IC = 15 A
4
0
20
4
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 7. Capacitance Characteristic
Figure 8. Gate charge Characteristics
10000
15
Gate-Emitter Voltage, VGE [V]
Capacitance [pF]
Cies
1000
Coes
100
Common Emitter
VGE = 0 V, f = 1 MHz
Cres
12
VCC = 300 V
9
6
3
Common Emitter
o
o
TC = 25 C
TC = 25 C
10
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 9. Turn-on Characteristics vs.
Gate Resistance
0
40
80
120
Gate Charge, Qg [nC]
160
Figure 10. Turn-off Characteristics vs.
Gate Resistance
500
5000
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 30 A
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 30 A
o
o
Switching Time [ns]
Switching Time [ns]
TC = 175 C
100
td(on)
tr
0
o
1000
TC = 25 C
10
400 V
200 V
10
20
30
40
Gate Resistance, RG [Ω ]
Figure 11. Switching Loss vs.
Gate Resistance
td(off)
o
TC = 175 C
tf
100
10
50
TC = 25 C
0
10
20
30
40
Gate Resistance, RG [Ω ]
50
Figure 12. Turn-on Characteristics vs.
Collector Current
500
30
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 30 A
100
o
TC = 25 C
o
TC = 175 C
Switching Time [ns]
Switching Loss [mJ]
10
Eon
1
Eoff
tr
td(on)
10
Common Emitter
VGE = 15 V, RG = 8 Ω, VCC = 400 V
o
TC = 25 C
0.1
0
10
20
30
Gate Resistance, RG [Ω]
©2013 Fairchild Semiconductor Corporation
FGH30T65UPDT Rev. C1
40
o
, TC = 175 C
1
50
0
5
15
30
45
Collector Current, IC [A]
60
www.fairchildsemi.com
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Switching Loss vs.
Collector Current
50
1000
Common Emitter
VGE = 15 V, RG = 8 Ω
o
Switching Loss [mJ]
Switching Time [ns]
td(off)
100
tf
10
TC = 25 C
10
o
TC = 175 C
Eon
1
Eoff
Common Emitter
VGE = 15 V, RG = 8 Ω , VCC = 400 V
o
TC = 25 C
1
o
, TC = 175 C
0.1
0
15
30
45
Collector Current, IC [A]
60
0
15
30
45
60
Collector Current, IC [A]
Figure 15. Load Current vs. Frequency
Figure 16. SOA Characteristics
150
90
60
Duty cycle : 50%
o
T = 100 C
C
30 Power Dissipation = 125 W
load Current : peak of square wave
0
1k
10k
100k
DC Operation
1
Single Nonrepetitive
o
0.1
Pulse Tc = 25 C
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1M
Switching Frequency, f [Hz]
Figure 17. Forward Characteristics
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 18. Reverse Revovery Current
10
100
o
Reverse RecoveryCurrent, Irr [A]
Forward Current, IF [A]
100 µs
10 ms
IcMAX
(Continuous)
10
VCC = 400 V
o
TC = 175 C
10
o
TC = 75 C
o
TC = 25 C
1
10 µs
1 ms
120
Collector Current, Ic [A]
Collector Current, IC A]
IcMAX (Pulsed)
100
o
TC = 100 C
TC = 25 C
o
TC = 175 C
8
diF/dt = 200 A/µs
6
100 A/µs
4
diF/dt = 200 A/µs
2
100 A/µs
0
0
1
2
3
Forward Voltage, VF [V]
©2013 Fairchild Semiconductor Corporation
FGH30T65UPDT Rev. C1
0
4
6
15
30
45
Forward Current, IF [A]
60
www.fairchildsemi.com
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
800
o
Stored Recovery Charge, Qrr [nC]
Reverse Recovery Time, trr [ns]
200
diF/dt = 100 A/µs
160
200 A/µs
120
o
TC = 25 C
o
TC = 175 C
80
diF/dt = 100 A/µs
40
TC = 25 C
o
200 A/µs
TC = 175 C
600
diF/dt = 100 A/µs
400
200
200 A/µs
diF/dt = 100 A/µs
200 A/µs
0
0
0
15
30
45
Forward Current, IF [A]
60
0
15
30
45
Forwad Current, IF [A]
60
Figure 21. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Figure 22. Transient Thermal Impedance of Diode
Thermal Response [Zthjc]
2
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.01
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
©2013 Fairchild Semiconductor Corporation
FGH30T65UPDT Rev. C1
7
www.fairchildsemi.com
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
Typical Performance Characteristics
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
Mechanical Dimensions
Figure 23. TO247, Molded, 3-Lead, JEDEC AB Long Lead
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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Dimensions in Millimeters
©2013 Fairchild Semiconductor Corporation
FGH30T65UPDT Rev. C1
8
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2013 Fairchild Semiconductor Corporation
FGH30T65UPDT Rev. C1
9
www.fairchildsemi.com
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
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