FGH60T65SQD-F155
Field Stop Trench IGBT
650 V, 60 A
Description
Using novel field stop IGBT technology, ON semiconductor’s new
series of field stop 4th generation IGBTs offer the optimum
performance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are essential.
VCES
IC
Features
650 V
60 A
•
•
•
•
•
•
•
•
•
Max Junction Temperature 175°C
Positive Temperature Co−efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 60 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
This Device is Pb−Free and is RoHS Compliant
www.onsemi.com
C
G
E
E
C
G
Applications
COLLECTOR
(FLANGE)
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
TO−247−3LD
CASE 340CH
MARKING DIAGRAM
$Y&Z&3&K
FGH60T65
SQD
$Y
&Z
&3
&K
FGH60T65SQD
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
February, 2018 − Rev. 2
1
Publication Order Number:
FGH60T65SQD−F155/D
FGH60T65SQD−F155
ABSOLUTE MAXIMUM RATINGS
Symbol
FGH60T65SQD−F155
Unit
VCES
Collector to Emitter Voltage
650
V
VGES
Gate to Emitter Voltage
±20
V
Transient Gate to Emitter Voltage
±30
V
@ TC < 25°C
120
A
@ TC < 100°C
60
@ TC < 25°C
240
A
240
A
IC
Description
Collector Current
ILM
(Note 1)
Pulsed Collector Current
ICM
(Note 2)
Pulsed Collector Current
IF
IFM
(Note 2)
PD
Diode Forward Current
@ TC < 25°C
60
A
Diode Forward Current
@ TC < 100°C
30
A
240
A
@ TC < 25°C
333
W
@ TC < 100°C
167
W
Operating Junction Temperature Range
−55 to +175
°C
Storage Temperature Range
−55 to +175
°C
300
°C
Repetitive Forward Surge Current
Maximum Power Dissipation
TJ
TSTG
TL
Maximum Lead Temp. For soldering Purposes, 18” from case for 5 sec
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. VCC = 400 V, VGE = 15 V, IC = 240 A, RG = 21 W, Inductive Load.
2. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
Parameter
FGH60T65SQD−F155
Unit
RqJC (IGBT)
Thermal Resistance, Junction to Case, Max.
0.45
_C/W
RqJC (Diode)
Thermal Resistance, Junction to Case, Max.
1.25
_C/W
40
_C/W
RqJA
Thermal Resistance, Junction to Ambient, Max.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FGH60T65SQD−F155
FGH60T65SQD
TO−247−3LD
Tube
−
−
30
www.onsemi.com
2
FGH60T65SQD−F155
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
650
−
−
V
IC = 1 mA, Reference to 25°C
−
0.6
−
V/°C
OFF CHARACTERISTICS
BVCES
Collector to Emitter Breakdown Voltage
VGE = 0 V, IC = 1 mA
DBVCES / DTJ Temperature Coefficient of Breakdown Voltage
ICES
Collector Cut−Off Current
VCE = VCES, VGE = 0 V
−
−
250
mA
IGES
G−E Leakage Current
VGE = VGES, VCE = 0 V
−
−
±400
nA
IC = 60 mA, VCE = VGE
2.6
4.5
6.4
V
IC = 60 A, VGE = 15 V
−
1.6
2.1
V
IC = 60 A, VGE = 15 V,
TC = 175°C
−
1.92
−
V
−
3813
−
pF
−
90
−
pF
−
13
−
pF
−
20.8
−
ns
−
8
−
ns
Turn−Off Delay Time
−
102
−
ns
Fall Time
−
11.2
−
ns
Eon
Turn−On Switching Loss
−
227
−
mJ
Eoff
Turn−Off Switching Loss
−
100
−
mJ
Ets
Total Switching Loss
−
327
−
mJ
td(on)
Turn−On Delay Time
−
21.6
−
ns
ON CHARACTERISTICS
VGE(th)
G−E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1MHz
SWITCHING CHARACTERISTICS
td(on)
tr
td(off)
tf
tr
Turn−On Delay Time
Rise Time
VCC = 400 V, IC = 30 A,
RG = 4.7 W, VGE = 15 V,
Inductive Load, TC = 25°C
−
14.4
−
ns
Turn−Off Delay Time
−
97.6
−
ns
Fall Time
−
4.8
−
ns
Eon
Turn−On Switching Loss
−
585
−
mJ
Eoff
Turn−Off Switching Loss
−
167
−
mJ
Ets
Total Switching Loss
−
752
−
mJ
Td(on)
Turn−On Delay Time
−
19.2
−
ns
−
9.6
−
ns
Turn−Off Delay Time
−
115
−
ns
Fall Time
−
11.2
−
ns
Eon
Turn−On Switching Loss
−
448
−
mJ
Eoff
Turn−Off Switching Loss
−
199
−
mJ
Ets
Total Switching Loss
−
647
−
mJ
td(off)
tf
Tr
Td(off)
Tf
Rise Time
VCC = 400 V, IC = 15 A,
RG = 4.7 W, VGE = 15 V,
Inductive Load, TC = 25°C
Rise Time
VCC = 400 V, IC = 15 A,
RG = 4.7 W, VGE = 15 V,
Inductive Load, TC = 175°C
www.onsemi.com
3
FGH60T65SQD−F155
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
−
20.8
−
ns
−
16
−
ns
Turn−Off Delay Time
−
106
−
ns
Fall Time
−
8.8
−
ns
Eon
Turn−On Switching Loss
−
942
−
mJ
Eoff
Turn−Off Switching Loss
−
386
−
mJ
Ets
Total Switching Loss
−
1328
−
mJ
Qg
Total Gate Charge
−
79
−
nC
Qge
Gate to Emitter Charge
−
22
−
nC
Qgc
Gate to Collector Charge
−
27
−
nC
SWITCHING CHARACTERISTICS
Td(on)
Tr
Td(off)
Tf
Turn−On Delay Time
Rise Time
VCC = 400 V, IC = 30 A,
RG = 4.7 W, VGE = 15 V,
Inductive Load, TC = 175°C
VCE = 400 V, IC = 60 A,
VGE = 15 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted)
Symbol
VFM
Erec
Trr
Qrr
Parameter
Diode Forward Voltage
Reverse Recovery Energy
Diode Reverse Recovery Time
Test Conditions
IF = 30 A
IF = 30 A,
dIF/dt = 200 A/ms
Diode Reverse Recovery Charge
www.onsemi.com
4
Min
Typ
Max
Unit
TC = 25°C
−
2.3
2.7
V
TC = 175°C
−
1.9
−
TC = 175°C
−
50
−
mJ
TC = 25°C
−
34.6
−
ns
TC = 175°C
−
197
−
TC = 25°C
−
58.6
−
TC = 175°C
−
810
−
nC
FGH60T65SQD−F155
TYPICAL CHARACTERISTICS
TC = 25°C
180
240
20 V
15 V
12 V
Collector Current, IC [A]
Collector Current, IC [A]
240
10 V
VGE = 8 V
120
60
0
0
1
2
3
4
180
10 V
VGE = 8 V
60
0
1
Collector−Emitter Voltage, VCE [V]
Collector−Emitter Voltage, VCE [V]
Collector Current, IC [A]
3
Common Emitter
VGE = 1.5 V
TC = 25°C
TC = 175°C
120
60
0
1
2
3
4
2
60 A
IC = 30 A
1
−100
5
0
50
100
150
200
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Collector−Emitter Voltage, VCE [V]
Collector−Emitter Voltage, VCE [V]
−50
Collector−Emitter Case Temperature, TC [5C]
Common Emitter
TC = 25°C
16
IC = 30 A
60 A
120 A
8
5
120 A
Figure 3. Typical Saturation Voltage Characteristics
12
4
Common Emitter
VGE = 15 V
Collector−Emitter Voltage, VCE [V]
20
3
Figure 2. Typical Output Characteristics
240
0
2
Collector−Emitter Voltage, VCE [V]
Figure 1. Typical Output Characteristics
180
15 V
12 V
120
0
5
20 V
TC = 175°C
4
Common Emitter
TC = 175°C
16
IC = 30 A
12
60 A
120 A
8
4
0
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate−Emitter Voltage, VGE [V]
Gate−Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. VGE
Figure 6. Saturation Voltage vs. VGE
www.onsemi.com
5
FGH60T65SQD−F155
TYPICAL CHARACTERISTICS (Continued)
10000
Gate−Emitter Voltage, VGE [V]
15
Cies
Capacitance [pF]
1000
100
Coes
Cres
10
1
Common Emitter
VGE = 0 V, f = 1 MHz
TC = 25°C
10
1
12
VCC = 200 V
9
3
0
25
Collector−Emitter Voltage, VCE [V]
50
75
100
Gate Charge, Qq [nC]
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
200
1000
100
Switching Time [ns]
Switching Time [ns]
300 V
400 V
6
0
30
Common Emitter
TC = 25°C
tr
td(on)
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 60 A
TC = 25°C
TC = 175°C
td(off)
tf
100
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 60 A
TC = 25°C
TC = 175°C
10
5
10
0
10
20
30
40
50
0
10
Gate Resistance, RG [W]
20
30
40
50
Gate Resistance, RG [W]
Figure 9. Turn−on Characteristics vs.
Gate Resistance
Figure 10. Turn−off Characteristics
vs. Gate Resistance
5000
Switching Time [ns]
Switching Loos [mJ]
Eon
Eoff
1000
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 60 A
TC = 25°C
TC = 175°C
tr
td(on)
Common Emitter
VGE = 15 V, RG = 4.7 W
TC = 25°C
TC = 175°C
100
0
10
20
30
40
0
50
25
50
75
100
125
150
Gate Resistance, RG [W]
Collector Current, IC [A]
Figure 11. Switching Loos vs.
Gate Resistance
Figure 12. Turn−on Characteristics vs.
Collector Current
www.onsemi.com
6
FGH60T65SQD−F155
TYPICAL CHARACTERISTICS (Continued)
10000
Eon
t d(off)
100
Switching Loos [mJ]
Switching Time [ns]
500
tf
10
Common Emitter
VGE = 15 V, RG = 4.7 W
TC = 25°C
TC = 175°C
1000
Eoff
Common Emitter
VGE = 15 V, RG = 4.7 W
TC = 25°C
TC = 175°C
100
50
1
0
25
50
75
100
125
0
150
25
Collector Current, IC [A]
Collector Current, IC [A]
Collector Current [A]
TC = 75°C
150
TC = 100°C
100
100
1k
10k
100k
10
1
0.1
1M
Notes:
1. TC = 25°C
2. TJ = 175°C
3. Single Pulse
1
10
100
Figure 16. SOA Characteristics
180
12
Reverse Recovery Current, Irr [A]
100
TC = 25°C
TC = 75°C
10
1
0
1
2
3
4
1000
Collector−Emitter Voltage, VCE [V]
Figure 15. Load Current vs. Frequency
Forward Current, IF [A]
100 ms
1 ms
10 ms
Switching Frequency, f[Hz]
TC = 175°C
150
10 ms
DC
50
0
125
400
TC = 25°C
200
100
Figure 14. Switching Loos vs.
Collector Current
Square Wave
TJ ≤ 175°C, D = 0.5,
VCE = 400 V, VGE = 15/0 V, RG = 4.7 W
250
75
Collector Current, IC [A]
Figure 13. Turn−off Characteristics vs.
Collector Current
300
50
5
9
di/dt = 200 A/ms
6
di/dt = 100 A/ms
di/dt = 200 A/ms
3
0
6
TC = 25°C
TC = 175°C
di/dt = 100 A/ms
0
20
40
60
80
Forward Voltage, VF [V]
Forward Current, IF [A]
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
www.onsemi.com
7
FGH60T65SQD−F155
TYPICAL CHARACTERISTICS (Continued)
1000
Stored Recovery Charge, Qrr [nC]
TC = 25°C
TC = 175°C
300
200
di/dt = 200 A/ms di/dt = 100 A/ms
100
0
0
20
40
60
800
600
400
di/dt = 100 A/ms
200
0
80
TC = 25°C
TC = 175°C
0
20
Forward Current, IF [A]
40
Thermal Response [ZTHJC]
0.5
0.2
0.1
0.05
0.02
0.01
P DM
t1
0.01 single pulse
0.005
−5
10
t2
Duty Factor, D = t1/t2
Peak TJ = PDM × ZTHJC + TC
10
−4
10
−3
10
−2
10
−1
10
0
Rectangular Pulse Duration [sec]
Figure 21. Transient Thermal Impedance of IGBT
2
1
0.5
0.2
0.1
0.1
0.05
P DM
0.02
t1
0.01
single pulse
0.01
−5
10
60
Figure 20. Stored Charge
0.6
0.1
di/dt = 200 A/ms
Forward Current, IF [A]
Figure 19. Reverse Recovery Time
Thermal Response [ZTHJC]
Reverse Recovery Time, trr [ns]
400
t2
Duty Factor, D = t1/t2
Peak TJ = PDM × ZTHJC + TC
−4
10
−3
−2
10
10
−1
10
Rectangular Pulse Duration [sec]
Figure 22. Transient Thermal Impedance of Diode
www.onsemi.com
8
0
10
80
FGH60T65SQD−F155
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CH
ISSUE O
www.onsemi.com
9
FGH60T65SQD−F155
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage
may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer
is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and
hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was
negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright
laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
◊
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
10
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
FGH60T65SQD−F155/D