FGH60T65SHD_F155

IGBT - Field Stop, Trench 650 V, 60 A FGH60T65SHD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. www.onsemi.com C Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 60 A • 100% of the Parts Tested for ILM (Note 1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution • This Device is Pb−Free and is RoHS Compliant G E E Applications C G TO−247−3LD CASE 340CH • Solar Inverter, UPS, Welder, Telecom, ESS, PFC MARKING DIAGRAM $Y&Z&3&K FGH60T65 SHD $Y &Z &3 &K FGH60T65SHD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 December, 2020 − Rev. 3 1 Publication Order Number: FGH60T65SHD/D FGH60T65SHD ABSOLUTE MAXIMUM RATINGS Description Symbol FGH60T65SHD−F155 Unit Collector to Emitter Voltage VCES 650 V Gate to Emitter Voltage VGES ±20 V ±30 V 120 A 60 A ILM 180 A ICM 180 A IF 60 A 30 A Transient Gate to Emitter Voltage Collector Current TC = 25°C Collector Current TC = 100°C Pulsed Collector Current (Note 1) TC = 25°C IC Pulsed Collector Current (Note 2) Diode Forward Current TC = 25°C Diode Forward Current TC = 100°C Pulsed Diode Maximum Forward Current (Note 2) IFM 180 A Maximum Power Dissipation TC = 25°C PD 349 W Maximum Power Dissipation TC = 100°C 174 W Operating Junction Temperature TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 180 A, RG = 27 , Inductive Load 2. Repetitive Rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol FGH60T65SHD−F155 Unit Thermal Resistance, Junction to Case, Max. (IGBT) Parameter RJC 0.43 °C/W Thermal Resistance, Junction to Case, Max. (Diode) RJC 1.25 °C/W Thermal Resistance, Junction to Ambient, Max. RJA 40 °C/W PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Packing Method Reel Size Tape Width Quantity FGH60T65SHD−F155 FGH60T65SHD TO−247−3LD Tube − − 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit 650 − − V OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES Temperature Coefficient of Breakdown Voltage BVCES / TJ VGE = 0 V, IC = 1 mA IC = 1 mA, Referenced to 25°C 0.6 V/°C Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA G−E Threshold Voltage VGE(th) IC = 60 mA, VCE = VGE 4.0 5.5 7.5 V Collector to Emitter Saturation Voltage VCE(sat) IC = 60 A, VGE = 15 V − 1.6 2.1 V IC = 60 A, VGE = 15 V, TC = 175°C − 2.14 − V ON CHARACTERISTICS www.onsemi.com 2 FGH60T65SHD ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 2980 − pF DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Input Capacitance Cies Output Capacitance Coes − 110 − pF Reverse Transfer Capacitance Cres − 36 − pF − 26 − ns − 48 − ns td(off) − 87 − ns SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time td(on) tr Turn−Off Delay Time Fall Time VCC = 400 V, IC = 60 A, RG = 6  VGE = 15 V, Inductive Load, TC = 25°C tf − 47 − ns Turn−On Switching Loss Eon − 1.69 − mJ Turn−Off Switching Loss Eoff − 0.63 − mJ Total Switching Loss Ets − 2.32 − mJ Turn−On Delay Time td(on) − 25 − ns − 60 − ns td(off) − 93 − ns tf − 72 − ns Turn−On Switching Loss Eon − 2.54 − mJ Turn−Off Switching Loss Eoff − 1.04 − mJ Total Switching Loss Ets − 3.58 − mJ Total Gate Charge Qg − 102 − nC Gate to Emitter Charge Qge − 18.4 − nC Gate to Collector Charge Qgc − 37.5 − nC Min Typ Max Unit TC = 25°C − 2.3 2.7 V TC = 175°C − 1.9 − TC = 175°C − 50 − J TC = 25°C − 34.6 − ns TC = 175°C − 197 − TC = 25°C − 58.6 − TC = 175°C − 810 − Rise Time tr Turn−Off Delay Time Fall Time VCC = 400 V, IC = 60 A, RG = 6  VGE = 15 V, Inductive Load, TC = 175°C VCC = 400 V, IC = 60 A, VGE = 15 V ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Parameter Diode Forward Voltage Reverse Recovery Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol VFM Erec trr Test Conditions IF = 30 A IF = 30 A, dIF/dt = 200 A/s Qrr nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH60T65SHD IC, Collector Current (A) IC, Collector Current (A) TYPICAL PERFORMANCE CHARACTERISTICS VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V) Figure 1. Typical Output Characteristics IC, Collector Current (A) VCE, Collector−Emitter Voltage (V) Figure 2. Typical Output Characteristics TC, Case Temperature (°C) Figure 3. Typical Saturation Voltage Characteristics Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V) VGE, Gate−Emitter Voltage (V) VGE, Gate−Emitter Voltage (V) Figure 5. Saturation Voltage vs VGE Figure 6. Saturation Voltage vs VGE www.onsemi.com 4 FGH60T65SHD Capacitance (pF) VGE, Gate−Emitter Voltage (V) TYPICAL PERFORMANCE CHARACTERISTICS (continued) VCE, Collector−Emitter Voltage (V) Qg, Gate Charge (nC) Figure 7. Capacitance Characteristics Switching Time (ns) Switching Time (ns) Figure 8. Gate Charge Characteristics RG, Gate Resistance () RG, Gate Resistance () Figure 9. Turn−On Characteristics vs. Gate Resistance Switching Time (ns) Switching Loss (mJ) Figure 10. Turn−Off Characteristics vs. Gate Resistance IC, Collector Current (A) RG, Gate Resistance () Figure 12. Turn−On Characteristics vs. Collector Current Figure 11. Switching Loss vs. Gate Resistance www.onsemi.com 5 FGH60T65SHD Switching Time (ns) Switching Loss (mJ) TYPICAL PERFORMANCE CHARACTERISTICS (continued) IC, Collector Current (A) IC, Collector Current (A) Figure 13. Turn−Off Characteristics vs. Collector Current IC, Collector Current (A) IC, Collector Current (A) Figure 14. Switching Loss vs. Collector Current f, Switching Frequency (Hz) VCE, Collector−Emitter Voltage (V) Figure 16. SOA Characteristics IF, Forward Current (A) Irr, Reverse Recovery Current (A) Figure 15. Load Current vs. Frequency VF, Forward Voltage (V) IF, Forward Current (A) Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current www.onsemi.com 6 FGH60T65SHD Qrr, Stored Recovery Charge (nC) trr, Reverse Recovery Time (ns) TYPICAL PERFORMANCE CHARACTERISTICS (continued) IF, Forward Current (A) IF, Forward Current (A) Figure 19. Reverse Recovery Time Thermal Response (Zjc) Figure 20. Stored Charge P DM t1 t2 Rectangular Pulse Duration (sec) Thermal Response (Zjc) Figure 21. Transient Thermal Impedance of IGBT P DM t1 t2 Rectangular Pulse Duration (sec) Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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