FGH60T65SQD-F155

FGH60T65SQD-F155 Field Stop Trench IGBT 650 V, 60 A Description Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 60 A • • • • • • • • • Max Junction Temperature 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 60 A 100% of the Parts Tested for ILM(1) High Input Impedance Fast Switching Tighten Parameter Distribution This Device is Pb−Free and is RoHS Compliant www.onsemi.com C G E E C G Applications COLLECTOR (FLANGE) • Solar Inverter, UPS, Welder, Telecom, ESS, PFC TO−247−3LD CASE 340CH MARKING DIAGRAM $Y&Z&3&K FGH60T65 SQD $Y &Z &3 &K FGH60T65SQD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 February, 2018 − Rev. 2 1 Publication Order Number: FGH60T65SQD−F155/D FGH60T65SQD−F155 ABSOLUTE MAXIMUM RATINGS Symbol FGH60T65SQD−F155 Unit VCES Collector to Emitter Voltage 650 V VGES Gate to Emitter Voltage ±20 V Transient Gate to Emitter Voltage ±30 V @ TC < 25°C 120 A @ TC < 100°C 60 @ TC < 25°C 240 A 240 A IC Description Collector Current ILM (Note 1) Pulsed Collector Current ICM (Note 2) Pulsed Collector Current IF IFM (Note 2) PD Diode Forward Current @ TC < 25°C 60 A Diode Forward Current @ TC < 100°C 30 A 240 A @ TC < 25°C 333 W @ TC < 100°C 167 W Operating Junction Temperature Range −55 to +175 °C Storage Temperature Range −55 to +175 °C 300 °C Repetitive Forward Surge Current Maximum Power Dissipation TJ TSTG TL Maximum Lead Temp. For soldering Purposes, 18” from case for 5 sec Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 240 A, RG = 21 W, Inductive Load. 2. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter FGH60T65SQD−F155 Unit RqJC (IGBT) Thermal Resistance, Junction to Case, Max. 0.45 _C/W RqJC (Diode) Thermal Resistance, Junction to Case, Max. 1.25 _C/W 40 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH60T65SQD−F155 FGH60T65SQD TO−247−3LD Tube − − 30 www.onsemi.com 2 FGH60T65SQD−F155 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit 650 − − V IC = 1 mA, Reference to 25°C − 0.6 − V/°C OFF CHARACTERISTICS BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA DBVCES / DTJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 mA IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA IC = 60 mA, VCE = VGE 2.6 4.5 6.4 V IC = 60 A, VGE = 15 V − 1.6 2.1 V IC = 60 A, VGE = 15 V, TC = 175°C − 1.92 − V − 3813 − pF − 90 − pF − 13 − pF − 20.8 − ns − 8 − ns Turn−Off Delay Time − 102 − ns Fall Time − 11.2 − ns Eon Turn−On Switching Loss − 227 − mJ Eoff Turn−Off Switching Loss − 100 − mJ Ets Total Switching Loss − 327 − mJ td(on) Turn−On Delay Time − 21.6 − ns ON CHARACTERISTICS VGE(th) G−E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1MHz SWITCHING CHARACTERISTICS td(on) tr td(off) tf tr Turn−On Delay Time Rise Time VCC = 400 V, IC = 30 A, RG = 4.7 W, VGE = 15 V, Inductive Load, TC = 25°C − 14.4 − ns Turn−Off Delay Time − 97.6 − ns Fall Time − 4.8 − ns Eon Turn−On Switching Loss − 585 − mJ Eoff Turn−Off Switching Loss − 167 − mJ Ets Total Switching Loss − 752 − mJ Td(on) Turn−On Delay Time − 19.2 − ns − 9.6 − ns Turn−Off Delay Time − 115 − ns Fall Time − 11.2 − ns Eon Turn−On Switching Loss − 448 − mJ Eoff Turn−Off Switching Loss − 199 − mJ Ets Total Switching Loss − 647 − mJ td(off) tf Tr Td(off) Tf Rise Time VCC = 400 V, IC = 15 A, RG = 4.7 W, VGE = 15 V, Inductive Load, TC = 25°C Rise Time VCC = 400 V, IC = 15 A, RG = 4.7 W, VGE = 15 V, Inductive Load, TC = 175°C www.onsemi.com 3 FGH60T65SQD−F155 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit − 20.8 − ns − 16 − ns Turn−Off Delay Time − 106 − ns Fall Time − 8.8 − ns Eon Turn−On Switching Loss − 942 − mJ Eoff Turn−Off Switching Loss − 386 − mJ Ets Total Switching Loss − 1328 − mJ Qg Total Gate Charge − 79 − nC Qge Gate to Emitter Charge − 22 − nC Qgc Gate to Collector Charge − 27 − nC SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf Turn−On Delay Time Rise Time VCC = 400 V, IC = 30 A, RG = 4.7 W, VGE = 15 V, Inductive Load, TC = 175°C VCE = 400 V, IC = 60 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Symbol VFM Erec Trr Qrr Parameter Diode Forward Voltage Reverse Recovery Energy Diode Reverse Recovery Time Test Conditions IF = 30 A IF = 30 A, dIF/dt = 200 A/ms Diode Reverse Recovery Charge www.onsemi.com 4 Min Typ Max Unit TC = 25°C − 2.3 2.7 V TC = 175°C − 1.9 − TC = 175°C − 50 − mJ TC = 25°C − 34.6 − ns TC = 175°C − 197 − TC = 25°C − 58.6 − TC = 175°C − 810 − nC FGH60T65SQD−F155 TYPICAL CHARACTERISTICS TC = 25°C 180 240 20 V 15 V 12 V Collector Current, IC [A] Collector Current, IC [A] 240 10 V VGE = 8 V 120 60 0 0 1 2 3 4 180 10 V VGE = 8 V 60 0 1 Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] Collector Current, IC [A] 3 Common Emitter VGE = 1.5 V TC = 25°C TC = 175°C 120 60 0 1 2 3 4 2 60 A IC = 30 A 1 −100 5 0 50 100 150 200 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] −50 Collector−Emitter Case Temperature, TC [5C] Common Emitter TC = 25°C 16 IC = 30 A 60 A 120 A 8 5 120 A Figure 3. Typical Saturation Voltage Characteristics 12 4 Common Emitter VGE = 15 V Collector−Emitter Voltage, VCE [V] 20 3 Figure 2. Typical Output Characteristics 240 0 2 Collector−Emitter Voltage, VCE [V] Figure 1. Typical Output Characteristics 180 15 V 12 V 120 0 5 20 V TC = 175°C 4 Common Emitter TC = 175°C 16 IC = 30 A 12 60 A 120 A 8 4 0 0 0 4 8 12 16 20 0 4 8 12 16 20 Gate−Emitter Voltage, VGE [V] Gate−Emitter Voltage, VGE [V] Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE www.onsemi.com 5 FGH60T65SQD−F155 TYPICAL CHARACTERISTICS (Continued) 10000 Gate−Emitter Voltage, VGE [V] 15 Cies Capacitance [pF] 1000 100 Coes Cres 10 1 Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 10 1 12 VCC = 200 V 9 3 0 25 Collector−Emitter Voltage, VCE [V] 50 75 100 Gate Charge, Qq [nC] Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics 200 1000 100 Switching Time [ns] Switching Time [ns] 300 V 400 V 6 0 30 Common Emitter TC = 25°C tr td(on) Common Emitter VCC = 400 V, VGE = 15 V IC = 60 A TC = 25°C TC = 175°C td(off) tf 100 Common Emitter VCC = 400 V, VGE = 15 V IC = 60 A TC = 25°C TC = 175°C 10 5 10 0 10 20 30 40 50 0 10 Gate Resistance, RG [W] 20 30 40 50 Gate Resistance, RG [W] Figure 9. Turn−on Characteristics vs. Gate Resistance Figure 10. Turn−off Characteristics vs. Gate Resistance 5000 Switching Time [ns] Switching Loos [mJ] Eon Eoff 1000 Common Emitter VCC = 400 V, VGE = 15 V IC = 60 A TC = 25°C TC = 175°C tr td(on) Common Emitter VGE = 15 V, RG = 4.7 W TC = 25°C TC = 175°C 100 0 10 20 30 40 0 50 25 50 75 100 125 150 Gate Resistance, RG [W] Collector Current, IC [A] Figure 11. Switching Loos vs. Gate Resistance Figure 12. Turn−on Characteristics vs. Collector Current www.onsemi.com 6 FGH60T65SQD−F155 TYPICAL CHARACTERISTICS (Continued) 10000 Eon t d(off) 100 Switching Loos [mJ] Switching Time [ns] 500 tf 10 Common Emitter VGE = 15 V, RG = 4.7 W TC = 25°C TC = 175°C 1000 Eoff Common Emitter VGE = 15 V, RG = 4.7 W TC = 25°C TC = 175°C 100 50 1 0 25 50 75 100 125 0 150 25 Collector Current, IC [A] Collector Current, IC [A] Collector Current [A] TC = 75°C 150 TC = 100°C 100 100 1k 10k 100k 10 1 0.1 1M Notes: 1. TC = 25°C 2. TJ = 175°C 3. Single Pulse 1 10 100 Figure 16. SOA Characteristics 180 12 Reverse Recovery Current, Irr [A] 100 TC = 25°C TC = 75°C 10 1 0 1 2 3 4 1000 Collector−Emitter Voltage, VCE [V] Figure 15. Load Current vs. Frequency Forward Current, IF [A] 100 ms 1 ms 10 ms Switching Frequency, f[Hz] TC = 175°C 150 10 ms DC 50 0 125 400 TC = 25°C 200 100 Figure 14. Switching Loos vs. Collector Current Square Wave TJ ≤ 175°C, D = 0.5, VCE = 400 V, VGE = 15/0 V, RG = 4.7 W 250 75 Collector Current, IC [A] Figure 13. Turn−off Characteristics vs. Collector Current 300 50 5 9 di/dt = 200 A/ms 6 di/dt = 100 A/ms di/dt = 200 A/ms 3 0 6 TC = 25°C TC = 175°C di/dt = 100 A/ms 0 20 40 60 80 Forward Voltage, VF [V] Forward Current, IF [A] Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current www.onsemi.com 7 FGH60T65SQD−F155 TYPICAL CHARACTERISTICS (Continued) 1000 Stored Recovery Charge, Qrr [nC] TC = 25°C TC = 175°C 300 200 di/dt = 200 A/ms di/dt = 100 A/ms 100 0 0 20 40 60 800 600 400 di/dt = 100 A/ms 200 0 80 TC = 25°C TC = 175°C 0 20 Forward Current, IF [A] 40 Thermal Response [ZTHJC] 0.5 0.2 0.1 0.05 0.02 0.01 P DM t1 0.01 single pulse 0.005 −5 10 t2 Duty Factor, D = t1/t2 Peak TJ = PDM × ZTHJC + TC 10 −4 10 −3 10 −2 10 −1 10 0 Rectangular Pulse Duration [sec] Figure 21. Transient Thermal Impedance of IGBT 2 1 0.5 0.2 0.1 0.1 0.05 P DM 0.02 t1 0.01 single pulse 0.01 −5 10 60 Figure 20. Stored Charge 0.6 0.1 di/dt = 200 A/ms Forward Current, IF [A] Figure 19. Reverse Recovery Time Thermal Response [ZTHJC] Reverse Recovery Time, trr [ns] 400 t2 Duty Factor, D = t1/t2 Peak TJ = PDM × ZTHJC + TC −4 10 −3 −2 10 10 −1 10 Rectangular Pulse Duration [sec] Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 8 0 10 80 FGH60T65SQD−F155 PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE O www.onsemi.com 9 FGH60T65SQD−F155 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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