PN2907BU

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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. PN2907 / MMBT2907 — PNP General-Purpose Transistor PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63. PN2907 MMBT2907 C E TO-92 SOT-23 Mark:2B EBC B Ordering Information Part Number Top Mark Package Packing Method PN2907BU PN2907 TO-92 3L Bulk MMBT29070-D87Z 2B SOT-23 3L Tape and Reel © 1997 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Publication Order Number: PN2907/D Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Voltage -60 V VEBO Emitter-Base Voltage -5.0 V -800 mA -55 to +150 °C IC TJ, TSTG Parameter Collector Current - Continuous Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty cycle operations. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Max. Parameter PN2907(3) MMBT2907(4) Unit Total Device Dissipation 625 350 mW Derate Above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 PD °C/W 357 Notes: 3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 1.6. inch x 1.6 inch x 0.06 inch. www.onsemi.com 2 °C/W PN2907 / MMBT2907 — PNP General-Purpose Transistor Absolute Maximum Ratings(1),(2) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = -10 mA, IB = 0 IC = -10 μA, IE = 0 V(BR)CBO Collector-Base Breakdown Voltage -40 V -60 V Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V Collector Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA Base Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA V(BR)EBO ICEX IBL ICBO Collector Cut-Off Current VCB = -50 V, IE = 0 -20 nA VCB = -50 V, IE = 0, TA = 150°C -20 μA On Characteristics(5) hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage VCE = -10 V, IC = -0.1 mA 35 VCE = -10 V, IC = -1.0 mA 50 VCE = -10 V, IC = -10 mA 70 VCE = -10 V, IC = -150 mA 100 VCE = -10 V, IC = -500 mA 30 300 IC = -150 mA, IB = -15 mA -0.4 IC = -500 mA, IB = -50 mA -1.6 IC = -150 mA, IB = -15 mA -1.3 IC = -500 mA, IB = -50 mA -2.6 V V Small Signal Characteristics Cob Output Capacitance VCB = -10 V, f = 1.0 MHz 8 pF Cib Input Capacitance VEB = -2.0 V, f = 1.0 MHz 30 pF hfe Small-Signal Current Gain IC = -50 mA, VCE = -20 V, f = 100 MHz 45 ns 10 ns 40 ns 100 ns 80 ns 30 ns 2 Switching Characteristics ton Turn-On Time td Delay Time tr Rise Time toff Turn-Off Time ts Storage Time tf Fall Time VCC = -30 V, IC = -150 mA, IB1 = -15 mA VCC = -6.0 V, IC = -150 mA, IB1 = IB2 = -15mA Note: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. www.onsemi.com 3 PN2907 / MMBT2907 — PNP General-Purpose Transistor Electrical Characteristics PN2907 / MMBT2907 — PNP General-Purpose Transistor Physical Dimensions TO-92 (Bulk) D Figure 1. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 4 SOT-23 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 0.25 0.20 MIN (0.55) SEATING PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 SCALE: 2X Figure 2. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 5 PN2907 / MMBT2907 — PNP General-Purpose Transistor Physical Dimensions (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com