PZT2222A
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT−223
package which is designed for medium power surface mount
applications.
Features
• PNP Complement is PZT2907AT1
• The SOT−223 Package Can be Soldered Using Wave or Reflow
• SOT−223 Package Ensures Level Mounting, Resulting in Improved
•
•
•
•
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SOT−223 PACKAGE
NPN SILICON TRANSISTOR
SURFACE MOUNT
4
Thermal Conduction, and Allows Visual Inspection of Soldered
Joints
The Formed Leads Absorb Thermal Stress During Soldering,
Eliminating the Possibility of Damage to the Die
Available in 12 mm Tape and Reel
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
1
COLLECTOR
2, 4
BASE
1
3
EMITTER
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
40
Vdc
Collector−Base Voltage
VCBO
75
Vdc
Emitter−Base Voltage
(Open Collector)
VEBO
6.0
Vdc
Collector Current
IC
600
mAdc
Total Power Dissipation
up to TA = 25°C (Note 1)
PD
Storage Temperature Range
Tstg
− 65 to +150
°C
Junction Temperature°Range
TJ
− 55 to +150
°C
W
1.5
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x
0.059 inches; mounting pad for the collector lead min. 0.93 inches2.
MARKING DIAGRAM
AYM
P1FG
G
A
= Assembly Location
Y
= Year
M
= Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Symbol
Value
Unit
RqJA
83.3
°C/W
TL
260
10
°C
Sec
Thermal Resistance,
Junction−to−Ambient
Lead Temperature for Soldering,
0.0625″ from case
Time in Solder Bath
Package
Shipping†
PZT2222AT1G
SOT−223
(Pb−Free)
1,000 Tape & Reel
SPZT2222AT1G
SOT−223
(Pb−Free)
1,000 Tape & Reel
PZT2222AT3G
SOT−223
(Pb−Free)
4,000 Tape & Reel
THERMAL CHARACTERISTICS
Rating
3
SOT−223 (TO−261)
CASE 318E−04
STYLE 1
MAXIMUM RATINGS
Rating
2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2018 − Rev. 11
1
Publication Order Number:
PZT2222AT1/D
PZT2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
V(BR)CBO
°75°
−
Vdc
Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
−
Vdc
Base−Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc)
IBEX
−
20
nAdc
Collector−Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc)
ICEX
−
10
nAdc
Emitter−Base Cutoff Current (VEB = 3.0 Vdc, IC = 0)
IEBO
−
100
nAdc
Collector−Base Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
ICBO
−
−
10
10
nAdc
mAdc
35
50
70
35
100
50
40
−
−
−
−
300
−
−
−
−
0.3
1.0
0.6
−
1.2
2.0
2.0
0.25
8.0
1.25
−
−
8.0x10−4
4.0x10−4
50
75
300
375
5.0
25
35
200
−
4.0
300
−
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = − 55°C)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE
Collector−Emitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
Base−Emitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
Input Impedance°
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
°hie°
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hre
Small−Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
ť hfe ť
Output Admittance°
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
°hoe°
F
Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, f = 1.0 kHz)
−
Vdc
Vdc
kW
−
−
mmhos
dB
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cc
−
8.0
pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ce
−
25
pF
(VCC = 30 Vdc, IC = 150 mAdc,
IB(on) = 15 mAdc, VEB(off) = 0.5 Vdc)
Figure 1
td
−
10
ns
tr
−
25
(VCC = 30 Vdc, IC = 150 mAdc,
IB(on) = IB(off) = 15 mAdc)
Figure 2
ts
−
225
tf
−
60
SWITCHING TIMES (TA = 25°C)
Delay Time
Rise Time
Storage Time
Fall Time
www.onsemi.com
2
ns
PZT2222A
VCC
Vi
R2
90%
Vo
R1
10%
0
tr
Vi
D.U.T.
tp
Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time
Vi = − 0.5 V to +9.9 V, VCC = +30 V, R1 = 619 W, R2 = 200 W.
PULSE GENERATOR:
PULSE DURATION
RISE TIME
DUTY FACTOR
OSCILLOSCOPE:
INPUT IMPEDANCE
INPUT CAPACITANCE
RISE TIME
tp 3 200 ns
tr 3
2 ns
d =
0.02
Zi > 100 kW
Ci < 12 pF
tr <
5 ns
VCC
Vi
+16.2 V
R2
D.U.T.
R1
0
R3
Vi
TIME
Vo
OSCILLOSCOPE
D1
R4
-13.8 V
tf
100 ms
VBB
Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time
TYPICAL CHARACTERISTICS
1.2
1
0.1
0.01
1.1
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
TA = 25°C
TA = −55°C
TA = 150°C
0.1
1
10
100
1000
IC/IB = 10
1.0
TA = −55°C
0.9
0.8
0.7
TA = 25°C
0.6
0.5
0.4
0.3
0.2
TA = 150°C
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
www.onsemi.com
3
PZT2222A
TYPICAL CHARACTERISTICS
2.0
100
1.1
1.0
TA = −55°C
0.1
1
10
100
1000
0.3
0.2
600 mA
300 mA
100 mA
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
Figure 5. DC Current Gain vs. Collector
Current
Figure 6. Saturation Region
100
100
VCE = 2 V
C, CAPACITANCE (pF)
TA = 25°C
0.5
0.4
1.4
IB, BASE CURRENT (mA)
0.8
0.6
1.6
IC, COLLECTOR CURRENT (mA)
0.9 TA = −55°C
0.7
TA = 25°C
1.8
10 mA
TA = 25°C
10
VBE(ON), BASE−EMITTER ON VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
TA = 150°C
Cibo
Cobo
10
TA = 150°C
0.1
1
10
100
1
1000
0.1
1
10
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (V)
Figure 7. Base−Emitter Turn−On Voltage vs.
Collector Current
Figure 8. Capacitance
1000
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
VCE = 6 V
IC = 1 mA
1000
0.0001
1s
0.1
0.01
100
0.001
10
Single Pulse Test at TA = 25°C
1
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Safe Operating Area
www.onsemi.com
4
100
100
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE R
DATE 02 OCT 2018
SCALE 1:1
q
q
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT−223 (TO−261)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
SOT−223 (TO−261)
CASE 318E−04
ISSUE R
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
ANODE
CATHODE
NC
CATHODE
STYLE 6:
PIN 1.
2.
3.
4.
RETURN
INPUT
OUTPUT
INPUT
STYLE 7:
PIN 1.
2.
3.
4.
ANODE 1
CATHODE
ANODE 2
CATHODE
STYLE 11:
PIN 1. MT 1
2. MT 2
3. GATE
4. MT 2
STYLE 3:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 8:
STYLE 12:
PIN 1. INPUT
2. OUTPUT
3. NC
4. OUTPUT
CANCELLED
DATE 02 OCT 2018
STYLE 4:
PIN 1.
2.
3.
4.
SOURCE
DRAIN
GATE
DRAIN
STYLE 5:
PIN 1.
2.
3.
4.
STYLE 9:
PIN 1.
2.
3.
4.
INPUT
GROUND
LOGIC
GROUND
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
DRAIN
GATE
SOURCE
GATE
STYLE 13:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
GENERIC
MARKING DIAGRAM*
AYW
XXXXXG
G
1
A
= Assembly Location
Y
= Year
W
= Work Week
XXXXX = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT−223 (TO−261)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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