BLL6H1214L-250,112

BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 3 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) 1.2 to 1.4 50 250 17 55 15 5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 300 s with  of 10 %:  Output power = 250 W  Power gain = 17 dB  Efficiency = 55 %  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (1.2 GHz to 1.4 GHz)  Internally matched for ease of use  Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC BLL6H1214L(S)-250 NXP Semiconductors LDMOS L-band radar power transistor 1.3 Applications  L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLL6H1214L-250 (SOT502A) 1 drain 2 gate 3 source 1 1 [1] 3 2 2 3 sym112 BLL6H1214LS-250 (SOT502B) 1 drain 2 gate 3 source 1 1 [1] 3 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLL6H1214L-250 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLL6H1214LS-250 - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage VGS gate-source voltage 0.5 +13 V ID drain current - 42 A Tstg storage temperature 65 +150 C Tj junction temperature - 200 C BLL6H1214L-250_1214LS-250 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 July 2010 Min Max Unit - 100 V © NXP B.V. 2010. All rights reserved. 2 of 13 BLL6H1214L(S)-250 NXP Semiconductors LDMOS L-band radar power transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Zth(j-c) transient thermal impedance from junction to case Tcase = 85 C; PL = 250 W tp = 100 s;  = 10 % 0.10 K/W tp = 200 s;  = 10 % 0.13 K/W tp = 300 s;  = 10 % 0.15 K/W tp = 100 s;  = 20 % 0.14 K/W tp = 500 s;  = 20 % 0.20 K/W 6. Characteristics Table 6. DC characteristics Tj = 25 C. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA Min Typ Max Unit 100 - - 1.8 2.25 V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.3 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 32 42 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 270 mA 1.6 2.3 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 9.5 A - 100 169 m Table 7. RF characteristics Mode of operation: pulsed RF; tp = 300 s;  = 10 %; RF performance at VDS = 50 V; IDq = 100 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit. Symbol Parameter Conditions PL output power VDS drain-source voltage PL = 250 W - - 50 V Gp power gain PL = 250 W 15 17 - dB tp pulse duration PL = 250 W - 300 500 s  duty cycle PL = 250 W - 10 20 % RLin input return loss PL = 250 W - 10 - dB PL(1dB) output power at 1 dB gain compression - 300 - W D drain efficiency PL = 250 W 49 55 - % Pdroop(pulse) pulse droop power PL = 250 W - 0 0.3 dB tr rise time PL = 250 W - 15 - ns tf fall time PL = 250 W - 5 - ns BLL6H1214L-250_1214LS-250 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 July 2010 Min Typ Max Unit 250 - - W © NXP B.V. 2010. All rights reserved. 3 of 13 BLL6H1214L(S)-250 NXP Semiconductors LDMOS L-band radar power transistor 6.1 Ruggedness in class-AB operation The BLL6H1214L-250 and BLL6H1214LS-250 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 100 mA; PL = 250 W; tp = 300 s;  = 10 %. 7. Application information 7.1 Impedance information Table 8. Typical impedance Typical values unless otherwise specified. f ZS ZL GHz   1.2 1.268  j2.623 2.987  j1.664 1.3 2.193  j2.457 2.162  j1.326 1.4 2.359  j2.052 1.604  j1.887 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance BLL6H1214L-250_1214LS-250 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 July 2010 © NXP B.V. 2010. All rights reserved. 4 of 13 BLL6H1214L(S)-250 NXP Semiconductors LDMOS L-band radar power transistor 7.2 RF performance 001aal165 350 PL (W) 300 001aal166 20 Gp (dB) (1) (2) (3) 16 250 12 (1) (2) (3) 200 150 8 100 4 50 0 0 0 3 6 0 9 50 100 Pi (W) VDS = 50 V; tp = 300 s;  = 10 %; IDq = 100 mA. (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Output power as a function of input power; typical values 200 250 300 350 PL (W) VDS = 50 V; tp = 300 s;  = 10 %; IDq = 100 mA. (1) f = 1200 MHz Fig 2. 150 Fig 3. Power gain as a function of load power; typical values BLL6H1214L-250_1214LS-250 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 July 2010 © NXP B.V. 2010. All rights reserved. 5 of 13 BLL6H1214L(S)-250 NXP Semiconductors LDMOS L-band radar power transistor 001aal167 70 ηD (%) 60 001aal168 20 Gp (dB) 60 ηD (%) ηD 18 50 Gp 50 (1) (3) (2) 40 30 16 40 14 30 12 20 20 10 0 0 50 100 150 200 250 10 1175 300 350 PL (W) VDS = 50 V; tp = 300 s;  = 10 %; IDq = 100 mA. 1225 1275 1325 10 1375 1425 f (MHz) PL = 250 W; VDS = 50 V; tp = 300 s;  = 10 %; IDq = 100 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 4. Drain efficiency as a function of load power; typical values Fig 5. Power gain and drain efficiency as function of frequency; typical values 001aal169 20 RLin (dB) 16 12 8 4 0 1175 1225 1275 1325 1375 1425 f (MHz) PL = 250 W; VDS = 50 V; tp = 300 s;  = 10 %; IDq = 100 mA. Fig 6. Input return loss as a function of frequency; typical value BLL6H1214L-250_1214LS-250 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 July 2010 © NXP B.V. 2010. All rights reserved. 6 of 13 BLL6H1214L(S)-250 NXP Semiconductors LDMOS L-band radar power transistor 7.3 Application circuit C1 C10 C3 C9 C2 C7 C8 C4 R1 C5 C6 001aal170 See Table 9 for list of components. Fig 7. Component layout for class-AB application circuit Table 9. List of components See Figure 7. Striplines are on a Rodgers Duroid 6006 Printed-Circuit Board (PCB); r = 6.15 F/m; thickness = 0.64 mm Component Description Value C1 multilayer ceramic chip capacitor 10 F; 35 V [1] C2, C4 multilayer ceramic chip capacitor 51 pF [2] C3, C8 multilayer ceramic chip capacitor 1 nF [2] C5 multilayer ceramic chip capacitor 82 pF [3] C6, C7 multilayer ceramic chip capacitor 56 pF [3] C9 multilayer ceramic chip capacitor 100 pF [3] C10 electrolytic capacitor 47 F; 63 V R1 SMD resistor 10  [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. [3] American Technical Ceramics type 800B or capacitor of same quality. BLL6H1214L-250_1214LS-250 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 July 2010 Remarks 0603 © NXP B.V. 2010. All rights reserved. 7 of 13 BLL6H1214L(S)-250 NXP Semiconductors LDMOS L-band radar power transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 8. EUROPEAN PROJECTION Package outline SOT502A BLL6H1214L-250_1214LS-250 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 July 2010 © NXP B.V. 2010. All rights reserved. 8 of 13 BLL6H1214L(S)-250 NXP Semiconductors LDMOS L-band radar power transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 9. 0.390 0.010 0.380 Package outline SOT502B BLL6H1214L-250_1214LS-250 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 July 2010 © NXP B.V. 2010. All rights reserved. 9 of 13 BLL6H1214L(S)-250 NXP Semiconductors LDMOS L-band radar power transistor 9. Abbreviations Table 10. Abbreviations Acronym Description LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio 10. Revision history Table 11. Revision history Document ID Release date BLL6H1214L-250_1214LS-250 v.3 20100714 Product data sheet Modifications: • Data sheet status Change notice - Supersedes BLL6H1214L-250_1214LS-250_2 Table 7 on page 3: the minimum value of D has been changed. BLL6H1214L-250_1214LS-250_2 20100302 Objective data sheet - BLL6H1214L-250_1214LS-250_1 BLL6H1214L-250_1214LS-250_1 20091211 Objective data sheet - - BLL6H1214L-250_1214LS-250 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 July 2010 © NXP B.V. 2010. All rights reserved. 10 of 13 BLL6H1214L(S)-250 NXP Semiconductors LDMOS L-band radar power transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 11.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. BLL6H1214L-250_1214LS-250 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 July 2010 © NXP B.V. 2010. All rights reserved. 11 of 13 BLL6H1214L(S)-250 NXP Semiconductors LDMOS L-band radar power transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLL6H1214L-250_1214LS-250 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 July 2010 © NXP B.V. 2010. All rights reserved. 12 of 13 NXP Semiconductors BLL6H1214L(S)-250 LDMOS L-band radar power transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 7.3 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 July 2010 Document identifier: BLL6H1214L-250_1214LS-250