PESD2CAN,215

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia SO T2 3 PESD2CAN CAN bus ESD protection diode Rev. 2 — 27 September 2012 Product data sheet 1. Product profile 1.1 General description PESD2CAN in a small SOT23 Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller Area Network (CAN) bus lines from the damage caused by ElectroStatic Discharge (ESD) and other transients. 1.2 Features and benefits        Max. peak pulse power: PPP = 230 W at tp = 8/20 s Low clamping voltage: VCL = 41 V at IPP = 5 A Ultra low leakage current: IRM < 1 nA ESD protection up to 30 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP = 5 A at tp = 8/20 s AEC-Q101 qualified 1.3 Applications  CAN bus protection  Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 24 V - 25 30 pF Per diode VRWM reverse standoff voltage Cd diode capacitance f = 1 MHz; VR = 0 V 2. Pinning information Table 2. Pinning Pin Description 1 cathode 1 2 cathode 2 3 common cathode Simplified outline Graphic symbol 3 1 3 1 2 2 006aaa155 PESD2CAN NXP Semiconductors CAN bus ESD protection diode 3. Ordering information Table 3. Ordering information Type number PESD2CAN Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PESD2CAN 6R* [1] * = placeholder for manufacturing site code. 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions peak pulse power tp = 8/20 s peak pulse current tp = 8/20 s Min Max Unit [1][2] - 230 W [1][2] - 5 A Per diode PPP IPP Per device Tj junction temperature - 150 C Tamb ambient temperature 55 +150 C Tstg storage temperature 65 +150 C [1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to 3 or 2 to 3. Table 6. ESD maximum ratings Symbol Parameter Conditions electrostatic discharge voltage IEC 61000-4-2 (contact discharge) Min Max Unit [1][2] - 30 kV [2] - 400 V [1][2] - 16 kV Per diode VESD machine model MIL-STD-883 (human body model) PESD2CAN Product data sheet [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to 3 or 2 to 3. All information provided in this document is subject to legal disclaimers. Rev. 2 — 27 September 2012 © NXP B.V. 2012. All rights reserved. 2 of 13 PESD2CAN NXP Semiconductors CAN bus ESD protection diode Table 7. ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3B (human body model) > 8 kV 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 μs IPP (%) 80 e−t 50 % IPP; 20 μs 40 10 % 0 10 20 30 30 ns 40 t (μs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 s pulse waveform according to IEC 61000-4-5 PESD2CAN Product data sheet Fig 2. ESD pulse waveform according to IEC 61000-4-2 All information provided in this document is subject to legal disclaimers. Rev. 2 — 27 September 2012 © NXP B.V. 2012. All rights reserved. 3 of 13 PESD2CAN NXP Semiconductors CAN bus ESD protection diode 6. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VRWM reverse standoff voltage - - 24 V IRM reverse leakage current VRWM = 24 V -