PESD1CAN,215

PESD1CAN CAN bus ESD protection diode Rev. 04 — 15 February 2008 Product data sheet 1. Product profile 1.1 General description PESD1CAN in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller Area Network (CAN) bus lines from the damage caused by ElectroStatic Discharge (ESD) and other transients. 1.2 Features n Due to the integrated diode structure only one small SOT23 package is needed to protect two CAN bus lines n Max. peak pulse power: PPP = 200 W at tp = 8/20 µs n Low clamping voltage: VCL = 40 V at IPP = 1 A n Ultra low leakage current: IRM < 1 nA n Typ. diode capacitance matching: ∆Cd/Cd = 0.1 % n ESD protection up to 23 kV n IEC 61000-4-2, level 4 (ESD) n IEC 61000-4-5 (surge); IPP = 3 A at tp = 8/20 µs n Small SMD plastic package 1.3 Applications n CAN bus protection n Automotive applications 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - - 24 V - 11 17 pF Per diode VRWM reverse standoff voltage Cd diode capacitance f = 1 MHz; VR = 0 V PESD1CAN Nexperia CAN bus ESD protection diode 2. Pinning information Table 2. Pinning Pin Description 1 cathode 1 2 cathode 2 3 common cathode Simplified outline Symbol 3 1 3 1 2 2 006aaa155 3. Ordering information Table 3. Ordering information Type number PESD1CAN Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PESD1CAN *AN [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit PPP peak pulse power tp = 8/20 µs [1][2] - 200 W IPP peak pulse current tp = 8/20 µs [1][2] - 3 A Per diode Per device Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to 3 or 2 to 3. © PESD1CAN_4 Product data sheet Rev. 04 — 15 February 2008 Nexperia B.V. 2017. All rights reserved 2 of 12 PESD1CAN Nexperia CAN bus ESD protection diode Table 6. ESD maximum ratings Symbol Parameter Conditions electrostatic discharge voltage IEC 61000-4-2 (contact discharge) Min Max Unit - 23 kV - 10 kV Per diode VESD [1][2] MIL-STD-883 (human body model) [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to 3 or 2 to 3. Table 7. ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV 001aaa631 001aaa630 120 IPP 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % t tr = 0.7 ns to 1 ns 0 0 10 20 30 30 ns 40 t (µs) Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5 60 ns Fig 2. ESD pulse waveform according to IEC 61000-4-2 © PESD1CAN_4 Product data sheet Rev. 04 — 15 February 2008 Nexperia B.V. 2017. All rights reserved 3 of 12 PESD1CAN Nexperia CAN bus ESD protection diode 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VRWM reverse standoff voltage - - 24 V IRM reverse leakage current VRWM = 24 V -