2SK4096LS

2SK4096LS Ordering number : ENA0774A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4096LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Symbol IDc*1 IDpack*2 Drain Current (DC) Drain Current (Pulse) Conditions Ratings VDSS VGSS IDP Limited only by maximum temperature Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10µs, duty cycle≤1% Unit 500 V ±30 V 8 A 7.1 A 32 A 2.0 W Allowable Power Dissipation PD 33 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS 397 mJ Avalanche Current *5 IAV 8 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 A *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=10mH, IAV=8A *5 L≤10mH, single pulse Marking : K4096 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1007 TI IM TC-00000921 / 51607QB TI IM TC-00000725 No. A0774-1/5 2SK4096LS Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current Cutoff Voltage VGS(off) ⏐yfs⏐ Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on) Ciss Input Capacitance Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Ratings Conditions min ID=10mA, VGS=0V VDS=400V, VGS=0V typ Unit max 500 VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4A V 3 2.2 ID=4A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz 100 µA ±100 nA 5 4.5 V S 0.65 0.85 Ω 600 pF 130 pF VDS=30V, f=1MHz See specified Test Circuit. 28 pF 18.5 ns See specified Test Circuit. 46 ns See specified Test Circuit. 75 ns See specified Test Circuit. 33 ns VDS=200V, VGS=10V, ID=8A VDS=200V, VGS=10V, ID=8A 24 nC 4.5 nC VDS=200V, VGS=10V, ID=8A IS=8A, VGS=0V 14 nC 0.9 1.2 V Package Dimensions unit : mm (typ) 7509-002 4.5 10.0 2.8 0.6 16.1 16.0 7.2 3.5 3.2 1.2 14.0 3.6 0.9 1.2 0.75 0.7 1 : Gate 2 : Drain 3 : Source 2.4 1 2 3 2.55 SANYO : TO-220FI(LS) 2.55 Switching Time Test Circuit VIN Avalanche Resistance Test Circuit VDD=200V L 10V 0V ≥50Ω RG ID=4A RL=50Ω VIN D VOUT PW=10µs D.C.≤0.5% 2SK4096LS 10V 0V G 50Ω VDD 2SK4096LS P.G RGS=50Ω S No. A0774-2/5 2SK4096LS ID -- VDS 25 ID -- VGS 25 Tc=25°C 15V 20 Tc= --25°C 20 10V 8V Drain Current, ID -- A Drain Current, ID -- A VDS=20V 15 10 25°C 75°C 15 10 5 5 6V VGS=5V 0 0 20 25 0 30 Drain-to-Source Voltage, VDS -- V 1.5 Tc=75°C 1.0 25°C --25°C 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 Gate-to-Source Voltage, VGS -- V Tc= 3 5 --2 °C C 75° 1.0 0.6 0.4 0.2 2 3 5 7 2 10 Drain Current, ID -- A 0 25 50 75 100 125 150 IT12330 IS -- VSD VGS=0V 1.0 7 5 3 2 0.01 0.2 3 0.6 0.8 1.0 1.2 1.4 IT12332 Ciss, Coss, Crss -- VDS 3 VDD=200V VGS=10V 5 0.4 Diode Forward Voltage, VSD -- V IT12331 SW Time -- ID 7 --25 3 2 3 2 7 1.0 =1 S VG 0.8 3 5 =4 , ID V 0 1.0 5 3 20 IT12328 A 1.2 0.1 7 5 7 2 18 10 7 5 2 2 0.1 16 1.4 3 2 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 5 14 Case Temperature, Tc -- °C C 25° 7 12 1.6 IT12329 VDS=10V 10 10 RDS(on) -- Tc 0 --50 10 ⏐yfs⏐ -- ID 2 f=1MHz 2 1000 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 2.0 5.5 8 1.8 2.5 0 5.0 6 2.0 ID=4A 0.5 4 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 3.0 2 IT12327 --25°C 15 °C 10 25°C 5 Tc=7 5 0 2 td (off) 100 7 5 tf tr 3 5 3 2 Coss 100 7 5 Crss 3 td(on) 2 Ciss 7 2 10 10 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT12333 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 50 IT12334 No. A0774-3/5 2SK4096LS VGS -- Qg 10 VDS=200V ID=8A 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 5 10 15 20 1.0 7 5 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 *1. Shows chip capability *2. SANYO’s ideal heat dissipation condition Tc=25°C Single pulse 2 3 5 7 1.0 1.5 1.0 0.5 2 3 5 7 10 2 3 5 7 100 2 3 5 71000 IT12336 PD -- Tc 40 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W IDpack(*2)=7.1A Drain-to-Source Voltage, VDS -- V PD -- Ta 2.0 PW≤10µs 1 0µ s 10 0µ s 1m s 10 10 ms 0m DC s op er ati on IDc(*1)=8A 10 7 5 3 2 IT12335 35 33 30 25 20 15 10 5 0 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT12337 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT12338 EAS -- Ta 120 Avalanche Energy derating factor -- % IDP=32A 0.01 0.1 25 Total Gate Charge, Qg -- nC 2.5 ASO 7 5 3 2 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A0774-4/5 2SK4096LS Note on usage : Since the 2SK4096LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2007. Specifications and information herein are subject to change without notice. PS No. A0774-5/5