ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
Dual Bootstrapped 12 V
MOSFET Driver with Output Disable
ADP3118
FEATURES
GENERAL DESCRIPTION
Optimized for low gate charge MOSFETs
All-in-one synchronous buck driver
Bootstrapped high-side drive
One PWM signal generates both drives
Anticross-conduction protection circuitry
Output disable control turns off both MOSFETs to float
output per Intel VRM 10
Meets CPU VR requirement when used with
Analog Devices, Inc. Flex-Mode1 controller
The ADP3118 is a dual, high voltage MOSFET driver optimized
for driving two N-channel MOSFETs, which are the two switches
in a nonisolated synchronous buck power converter. Each of the
drivers is capable of driving a 3000 pF load with a 25 ns propagation delay and a 25 ns transition time. One of the drivers can
be bootstrapped and is designed to handle the high voltage slew
rate associated with floating high-side gate drivers. The ADP3118
includes overlapping drive protection to prevent shoot-through
current in the external MOSFETs.
APPLICATIONS
The OD pin shuts off both the high-side and the low-side
MOSFETs to prevent rapid output capacitor discharge during
system shutdown.
Multiphase desktop CPU supplies
Single-supply synchronous buck converters
The ADP3118 is specified over the commercial temperature
range of 0°C to 85°C and is available in 8-lead SOIC and 8-lead
LFCSP packages.
SIMPLIFIED FUNCTIONAL BLOCK DIAGRAM
VIN 12V
VCC
ADP3118
D1
4
1
BST
CBST2
CBST1
IN 2
8
DRVH
DELAY
RBST
7
OD 3
DELAY
TO
INDUCTOR
SW
VCC
6
CMP
CONTROL
LOGIC
Q1
5
6
DRVL
Q2
PGND
05452-001
CMP
1V
RG
Figure 1.
1
Flex-Mode™ is protected by U.S. Patent 6683441.
©2008 SCILLC. All rights reserved.
January 2008 – Rev. 2
Publication Order Number:
ADP3118/D
ADP3118
TABLE OF CONTENTS
Features...............................................................................................1
Low-Side Driver ............................................................................ 9
Applications .......................................................................................1
High-Side Driver........................................................................... 9
General Description..........................................................................1
Overlap Protection Circuit .......................................................... 9
Simplified Functional Block Diagram............................................1
Application Information ................................................................10
Revision History................................................................................2
Supply Capacitor Selection........................................................10
Specifications .....................................................................................3
Bootstrap Circuit ........................................................................10
Absolute Maximum Ratings ............................................................4
MOSFET Selection .....................................................................10
ESD Caution ..................................................................................4
High-Side (Control) MOSFETs ................................................10
Pin Configuration and Function Descriptions .............................5
Low-Side (Synchronous) MOSFETs.........................................11
Timing Characteristics .....................................................................6
PC Board Layout Considerations .............................................11
Typical Performance Characteristics..............................................7
Outline Dimensions........................................................................13
Theory of Operation.........................................................................9
Ordering Guide ...........................................................................13
REVISION HISTORY
01/08 - Rev 2: Conversion to ON Semiconductor
9/07—Rev. 0 to Rev. A
Added LFCSP...................................................................... Universal
Updated Outline Dimensions........................................................13
Changes to Ordering Guide...........................................................13
4/05—Revision 0: Initial Version
Rev. 2 | Page 2 of 14 | www.onsemi.com
ADP3118
SPECIFICATIONS
VCC = 12 V, BST = 4 V to 26 V, TA = 0°C to 85°C, unless otherwise noted.1
Table 1.
Parameter
PWM INPUT
Input Voltage High
Input Voltage Low
Input Current
Hysteresis
OD INPUT
Input Voltage High
Input Voltage Low
Input Current
Hysteresis
Propagation Delay Times2
HIGH-SIDE DRIVER
Output Resistance, Sourcing Current
Output Resistance, Sinking Current
Output Resistance, Unbiased
Transition Times
Propagation Delay Times2
SW Pull-Down Resistance
LOW-SIDE DRIVER
Output Resistance, Sourcing Current
Output Resistance, Sinking Current
Output Resistance, Unbiased
Transition Times
Propagation Delay Times2
Symbol
1
2
Min
Typ
Max
Unit
0.8
+1
V
V
μA
mV
2.0
−1
90
250
2.0
tpdlOD
See Figure 3
250
20
35
V
V
μA
mV
ns
tpdhOD
See Figure 3
40
55
ns
BST − SW = 12 V
BST − SW = 12 V
BST − SW = 0 V
BST − SW = 12 V, CLOAD = 3 nF, see Figure 4
BST − SW = 12 V, CLOAD = 3 nF, see Figure 4
BST − SW = 12 V, CLOAD = 3 nF, see Figure 4
BST − SW = 12 V, CLOAD = 3 nF, see Figure 4
SW to PGND
2.2
1.0
10
25
20
25
25
10
3.5
2.5
Ω
Ω
kΩ
ns
ns
ns
ns
kΩ
3.2
2.5
VCC = PGND
CLOAD = 3 nF, see Figure 4
CLOAD = 3 nF, see Figure 4
CLOAD = 3 nF, see Figure 4
CLOAD = 3 nF, see Figure 4
SW = 5 V
SW = PGND
2.0
1.0
10
20
16
12
30
190
150
−1
90
trDRVH
tfDRVH
tpdhDRVH
tpdlDRVH
trDRVL
tfDRVL
tpdhDRVL
tpdlDRVL
Timeout Delay
SUPPLY
Supply Voltage Range
Supply Current
UVLO Voltage
Hysteresis
Conditions
VCC
ISYS
110
95
0.8
+1
4.15
BST = 12 V, IN = 0 V
VCC rising
2
1.5
350
All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC) methods.
For propagation delays, tpdh refers to the specified signal going high, and tpdl refers to the signal going low.
Rev. 2 | Page 3 of 14 | www.onsemi.com
40
30
40
35
35
30
35
45
13.2
5
3.0
Ω
Ω
kΩ
ns
ns
ns
ns
ns
ns
V
mA
V
mV
ADP3118
ABSOLUTE MAXIMUM RATINGS
Unless otherwise specified, all voltages are referenced to PGND.
Table 2.
Parameter
VCC
BST
BST to SW
SW
DC