BUL44G

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. BUL44G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL44G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base Drive Requirements: • • • http://onsemi.com POWER TRANSISTOR 2.0 AMPERES, 700 VOLTS, 40 AND 100 WATTS High and Flat DC Current Gain hFE Fast Switching No Coil Required in Base Circuit for Turn−Off (No Current Tail) Full Characterization at 125°C Tight Parametric Distributions are Consistent Lot−to−Lot These Devices are Pb−Free and are RoHS Compliant* TO−220AB CASE 221A−09 STYLE 1 MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Sustaining Voltage Rating VCEO 400 Vdc Collector−Base Breakdown Voltage VCES 700 Vdc Emitter−Base Voltage VEBO 9.0 Vdc Collector Current − Continuous − Peak (Note 1) IC ICM 2.0 5.0 Adc Base Current − Continuous − Peak (Note 1) IB IBM 1.0 2.0 Adc PD 50 0.4 W W/_C TJ, Tstg −65 to 150 _C Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 2.5 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds TL 260 _C Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Temperature 2 3 MARKING DIAGRAM BUL44G THERMAL CHARACTERISTICS Characteristics 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. AY WW BUL44 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping BUL44G TO−220 (Pb−Free) 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 April, 2010 − Rev. 7 1 Publication Order Number: BUL44/D BUL44G ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 400 − − Vdc ICEO − − 100 mAdc ICES − − − − − − 100 500 100 mAdc IEBO − − 100 mAdc − − 0.85 0.92 1.1 1.25 − − − − 0.20 0.20 0.25 0.25 0.5 0.5 0.6 0.6 14 − 12 12 8.0 7.0 10 − 32 20 20 14 13 22 34 − − − − − − fT − 13 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) COB − 38 60 pF Input Capacitance (VEB = 8.0 V) CIB − 380 600 pF OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (VCE = 500 V, VEB = 0) (TC = 125°C) (TC = 125°C) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) ON CHARACTERISTICS Base−Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) (IC = 1.0 Adc, IB = 0.2 Adc) VBE(sat) Collector−Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) VCE(sat) (IC = 1.0 Adc, IB = 0.2 Adc) DC Current Gain (IC = 0.2 Adc, VCE = 5.0 Vdc) (IC = 0.4 Adc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (TC = 125°C) (TC = 125°C) hFE (TC = 125°C) (TC = 125°C) (TC = 125°C) Vdc Vdc − DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) Dynamic Saturation Voltage: Determined 1.0 ms and 3.0 ms respectively after rising IB1 reaches 90% of final IB1 (IC = 0.4 Adc IB1 = 40 mAdc VCC = 300 V) 1.0 ms (TC = 125°C) − − 2.5 2.7 − − 3.0 ms (TC = 125°C) − − 1.3 1.15 − − (IC = 1.0 Adc IB1 = 0.2 Adc VCC = 300 V) 1.0 ms (TC = 125°C) − − 3.2 7.5 − − 3.0 ms (TC = 125°C) − − 1.25 1.6 − − http://onsemi.com 2 VCE(dsat) Vdc BUL44G SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms) Turn−On Time (IC = 0.4 Adc, IB1 = 40 mAdc IB2 = 0.2 Adc, VCC = 300 V) (TC = 125°C) Turn−Off Time (IC = 0.4 Adc, IB1 = 40 mAdc IB2 = 0.2 Adc, VCC = 300 V) (TC = 125°C) Turn−On Time (IC = 1.0 Adc, IB1 = 0.2 Adc IB1 = 0.5 Adc, VCC = 300 V) (TC = 125°C) Turn−Off Time (IC = 1.0 Adc, IB1 = 0.2 Adc IB2 = 0.5 Adc, VCC = 300 V) (TC = 125°C) ton − − 40 40 100 − ns toff − − 1.5 2.0 2.5 − ms ton − − 85 85 150 − ns toff − − 1.75 2.10 2.5 − ms tfi − − 125 120 200 − ns tsi − − 0.7 0.8 1.25 − ms tc − − 110 110 200 − ns tfi − − 110 120 175 − ns tsi − − 1.7 2.25 2.75 − ms tc − − 180 210 300 − ns tfi 70 − − 180 170 − ns tsi 2.6 − − 4.2 3.8 − ms tc − − 190 350 300 − ns SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH) Fall Time (IC = 0.4 Adc, IB1 = 40 mAdc IB2 = 0.2 Adc) Storage Time (TC = 125°C) Crossover Time Fall Time (TC = 125°C) (IC = 1.0 Adc, IB1 = 0.2 Adc IB2 = 0.5 Adc) Storage Time Storage Time Crossover Time (TC = 125°C) (TC = 125°C) Crossover Time Fall Time (TC = 125°C) (TC = 125°C) (IC = 0.8 Adc, IB1 = 160 mAdc IB2 = 160 mAdc) (TC = 125°C) (TC = 125°C) (TC = 125°C) http://onsemi.com 3 BUL44G TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 1 V VCE = 5 V TJ = 125°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN TJ = 125°C TJ = 25°C 10 1.0 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) TJ = 25°C TJ = -20°C 10 1.0 0.01 10 Figure 1. DC Current Gain at 1 Volt 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 2. DC Current Gain at 5 Volts 2.0 10 VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) TJ = 25°C 1.0 1.5 A 2A IC/IB = 10 1.0 IC/IB = 5 0.1 1A TJ = 25°C TJ = 125°C 0.4 A IC = 0.2 A 0 1.0 10 100 IB, BASE CURRENT (mA) 0.01 0.01 1000 1000 CIB 1.0 C, CAPACITANCE (pF) VBE , VOLTAGE (VOLTS) 1.1 0.9 0.8 TJ = 25°C 0.6 0.4 0.01 10 Figure 4. Collector−Emitter Saturation Voltage 1.2 0.5 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector Saturation Region 0.7 0.1 TJ = 125°C TJ = 25°C f = 1 MHz 100 COB 10 IC/IB = 5 IC/IB = 10 1.0 1.0 10 IC, COLLECTOR CURRENT (AMPS) 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Base−Emitter Saturation Region Figure 6. Capacitance 0.1 1.0 http://onsemi.com 4 100 BUL44G TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 300 250 6.0 IB(off) = IC/2 VCC = 300 V PW = 20 ms 5.0 4.0 IC/IB = 10 t, TIME (s) μ t, TIME (ns) 200 150 IC/IB = 5 100 TJ = 25°C TJ = 125°C 3.0 2.0 50 0 0.2 1.0 TJ = 25°C TJ = 125°C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) 1.8 0 0.2 2.0 IC/IB = 10 0.4 Figure 7. Resistive Switching, ton 0.6 0.8 1.0 1.2 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) 1.8 2.0 Figure 8. Resistive Switching, toff 2500 2.0 2000 1500 1000 TJ = 25°C TJ = 125°C t si , STORAGE TIME (μs) IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH IC/IB = 5 t, TIME (ns) IB(off) = IC/2 VCC = 300 V PW = 20 ms IC/IB = 5 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 1.5 IC = 1 A 1.0 500 TJ = 25°C TJ = 125°C 0 0.4 0.8 IC = 0.4 A IC/IB = 10 1.2 1.6 2.0 IC, COLLECTOR CURRENT (AMPS) 0.5 5.0 2.4 Figure 9. Inductive Storage Time, tsi tc 12 13 14 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH tc tfi 100 0 0.4 9.0 10 11 hFE, FORCED GAIN t, TIME (ns) t, TIME (ns) tfi 100 50 8.0 200 150 150 7.0 Figure 10. Inductive Storage Time 250 200 6.0 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 0.8 TJ = 25°C TJ = 125°C 1.2 1.6 2.0 IC, COLLECTOR CURRENT (AMPS) 50 0.4 2.4 Figure 11. Inductive Switching, tc and tfi IC/IB = 5 TJ = 25°C TJ = 125°C 0.8 1.2 1.6 2.0 IC, COLLECTOR CURRENT (AMPS) Figure 12. Inductive Switching, tc and tfi IC/IB = 10 http://onsemi.com 5 2.4 15 BUL44G TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 190 170 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH t fi , FALL TIME (ns) 150 140 IC = 0.4 A 130 120 110 IC = 1 A 100 80 5.0 6.0 7.0 8.0 150 130 IC = 0.4 A 110 90 TJ = 25°C TJ = 125°C 70 TJ = 25°C TJ = 125°C 90 9.0 10 11 hFE, FORCED GAIN 12 13 14 50 5.0 15 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH IC = 1 A 170 t c , CROSSOVER TIME (ns) 160 6.0 7.0 8.0 9.0 10 11 hFE, FORCED GAIN 12 13 14 15 Figure 14. Inductive Crossover Time Figure 13. Inductive Fall Time GUARANTEED SAFE OPERATING AREA INFORMATION 2.5 10ms 1ms DC (BUL44) 5ms 1ms 50ms 1.0 Extended SOA 0.1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 10 TC ≤ 125°C GAIN ≥ 4 LC = 500 mH 2.0 1.5 1.0 -5 V 0.5 -1.5 V 0.01 10 0 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 Figure 15. Forward Bias Safe Operating Area POWER DERATING FACTOR 0.6 THERMAL DERATING 0.2 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 100 200 300 400 500 600 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 700 limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of figure 15 is based on TC = 25°C; TJ(PK) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on figure 15 may be found at any case temperature by using the appropriate curve on figure 17. TJ(PK) may be calculated from the data in figure 20. At any case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base−to−emitter junction reverse−biased. The safe level is specified as a reverse−biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. SECOND BREAKDOWN DERATING 0.4 0 Figure 16. Reverse Bias Switching Safe Operating Area 1.0 0.8 0V 16 Figure 17. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC−VCE http://onsemi.com 6 BUL44G 10 5 4 VCE dyn 1 ms 3 8 VOLTS 2 dyn 3 ms 6 0 5 -1 tc VCLAMP 10% IC 10% VCLAMP 4 90% IB -2 IB 3 1 ms -3 -5 0 tsi 7 1 -4 90% IC tfi IC 9 90% IB1 2 3 ms IB 1 0 1 2 3 4 TIME 5 6 7 0 8 Figure 18. Dynamic Saturation Voltage Measurements 1 2 3 4 TIME 5 6 7 8 Figure 19. Inductive Switching Measurements +15 V 1 mF 150 W 3W 100 W 3W IC PEAK 100 mF MTP8P10 VCE PEAK VCE MTP8P10 MPF930 RB1 IB1 MUR105 Iout MPF930 +10 V IB A IB2 50 W RB2 MJE210 COMMON 150 W 3W 500 mF MTP12N10 1 mF V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA -Voff INDUCTIVE SWITCHING L = 200 mH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 mH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Table 1. Inductive Load Switching Drive Circuit TYPICAL THERMAL RESPONSE 1.0 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.2 0.01 0.1 0.05 0.01 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC1(t) P(pk) 0.02 t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.01 0.01 0.1 1.0 10 t, TIME (ms) Figure 20. Typical Thermal Response (ZqJC(t)) for BUL44 http://onsemi.com 7 100 1000 BUL44G PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AF SEATING PLANE −T− B F T C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. 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