FCP067N65S3

FCP067N65S3 MOSFET – Power, N-Channel, SUPERFET) III, Easy Drive 650 V, 44 A, 67 mW www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 59 mW Ultra Low Gate Charge (Typ. Qg = 78 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS RDS(ON) MAX ID MAX 650 V 67 mW @ 10 V 44 A D G S POWER MOSFET Applications G • Telecom / Server Power Supplies • Industrial Power Supplies • UPS / Solar D S TO−220 CASE 340AT MARKING DIAGRAM $Y&Z&3&K FCP 067N65S3 $Y &Z &3 &K FCP067N65S3 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 August, 2019 − Rev. 4 1 Publication Order Number: FCP067N65S3/D FCP067N65S3 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current FCP067N65S3 Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 44 − Continuous (TC = 100°C) 28 IDM Drain Current 110 A EAS Single Pulsed Avalanche Energy (Note 2) 214 mJ IAS Avalanche Current (Note 2) 4.8 A EAR Repetitive Avalanche Energy (Note 1) 3.12 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD TJ, TSTG TL − Pulsed (Note 1) A Power Dissipation (TC = 25°C) 312 W − Derate Above 25°C 2.5 W/°C −55 to +150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. IAS = 4.8 A, VDD = 50 V, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 22 A, di/dt ≤ 200 A/ms, VDD ≤ 380 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter FCP067N65S3 Unit _C/W RqJC Thermal Resistance, Junction to Case, Max. 0.4 RqJA Thermal Resistance, Junction to Ambient, Max. 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCP067N65S3 FCP067N65S3 TO−220 Tube N/A N/A 50 Units www.onsemi.com 2 FCP067N65S3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 − − V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25_C − 0.72 − V/_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 1 mA VDS = 520 V, TC = 125_C − 2.2 − IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V − − ±100 nA 2.5 − 4.5 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 1.0 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 22 A − 59 67 mW Forward Transconductance VDS = 20 V, ID = 22 A − 29 − S VDS = 400 V, VGS = 0 V, f = 1 MHz − 3090 − pF − 68 − pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 715 − pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 104 − pF Total Gate Charge at 10 V VDS = 400 V, ID = 22 A, VGS = 10 V (Note 4) − 78 − nC − 18 − nC Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance − 30 − nC f = 1 MHz − 0.6 − W VDD = 400 V, ID = 22 A, VGS = 10 V, Rg = 4.7 W (Note 4) − 26 − ns − 52 − ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time − 89 − ns Turn-Off Fall Time − 16 − ns Maximum Continuous Source to Drain Diode Forward Current − − 44 A ISM Maximum Pulsed Source to Drain Diode Forward Current − − 110 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 22 A − − 1.2 V trr Reverse Recovery Time − 435 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 22 A, dIF/dt = 100 A/ms − 9.2 − mC tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FCP067N65S3 TYPICAL PERFORMANCE CHARACTERISTICS 10 1 0.3 VDS = 20 V 250 ms Pulse Test 100 ID, Drain Current (A) ID, Drain Current (A) VGS = 10.0 V 8.0 V 100 7.0 V 6.5 V 6.0 V 5.5 V 25°C −55°C 250 ms Pulse Test TC = 25°C 1 20 1 10 VDS, Drain−Source Voltage (V) 150°C 10 2 Figure 1. On−Region Characteristics 200 TC = 25°C 0.20 0.15 0.10 VGS = 10 V VGS = 20 V 0.05 0.00 0 30 90 60 ID, Drain Current (A) 10 VGS, Gate−Source Voltage (V) Capacitances (pF) Ciss Coss 0.1 0.1 VGS = 0 V f = 1 MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Crss 1 10 100 VDS, Drain−Source Voltage (V) 0.3 1.2 1.5 0.6 0.9 VSD, Body Diode Forward Voltage (V) Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 100 25°C −55°C 0.1 0.0 120 1000 1 150°C 1 100000 10 VGS = 0 V 250 ms Pulse Test 100 Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 10000 7 Figure 2. Transfer Characteristics IS, Reverse Drain Current (A) RDS(ON), Drain−Source On−Resistance (W) 0.25 3 4 5 6 VGS, Gate−Source Voltage (V) 8 Figure 5. Capacitance Characteristics VDS = 130 V VDS = 400 V 6 4 2 0 1000 ID = 22 A 0 20 40 60 80 Qg, Total Gate Charge (nC) 100 Figure 6. Gate Charge Characteristics www.onsemi.com 4 FCP067N65S3 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 3.0 VGS = 0 V ID = 1 mA RDS(on), Drain−Source On−Resistance (Normalized) BVDSS, Drain−Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 −50 2.5 2.0 1.5 1.0 0.5 0.0 50 100 150 0 TJ, Junction Temperature (5C) 40 1 ms ID, Drain Current (A) ID, Drain Current (A) 100 ms 10 10 ms 1 Operation in this Area is Limited by RDS(on) 0.1 0.01 10 100 VDS, Drain−Source Voltage (V) 16 EOSS, (mJ) 50 75 100 125 TC, Case Temperature (5C) 150 Figure 10. Maximum Drain Current vs. Case Temperature 20 12 8 4 0 20 0 25 1000 Figure 9. Maximum Safe Operating Area 0 30 10 TC = 25°C TJ = 150°C Single Pulse 1 0 50 100 150 TJ, Junction Temperature (5C) 50 30 ms DC −50 Figure 8. On−Resistance Variation vs. Temperature Figure 7. Breakdown Voltage Variation vs. Temperature 200 100 VGS = 10 V ID = 22 A 100 200 300 400 500 600 650 VDS, Drain to Source Voltage (V) Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 FCP067N65S3 r(t), Normalized Effective Transient Thermal Resistance TYPICAL PERFORMANCE CHARACTERISTICS (continued) 2 1 0.1 DUTY CYCLE − DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 0.001 −5 10 ZqJC(t) = r(t) x RqJC RqJC = 0.4°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 10 −4 t2 10 −3 10 −2 10 −1 Figure 12. Transient Thermal Response Curve www.onsemi.com 6 10 0 10 1 FCP067N65S3 VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCP067N65S3 + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220−3LD CASE 340AT ISSUE A DATE 03 OCT 2017 Scale 1:1 DOCUMENT NUMBER: DESCRIPTION: 98AON13818G TO−220−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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