FCPF7N60YDTU

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FCP7N60 / FCPF7N60 N 沟道 SuperFET® MOSFET 600 V, 7 A, 600 m 特性 说明 • 650 V @ TJ = 150°C SuperFET® MOSFET 是飞兆半导体第一代利用电荷平衡技术实 现出色低导通电阻和更低栅极电荷性能的高压超级结 （SJ） MOSFET 系列产品。这项技术专用于最小化导通损耗并提供卓 越的开关性能、 dv/dt 额定值和更高雪崩能量。因此， SuperFET MOSFET 非常适合开关电源应用，如功率因数校正 (PFC)、服务 器 / 电信电源、平板电视电源、 ATX 电源及工业电源应用。 • 典型值 RDS(on) = 530 m • 超低栅极电荷 （典型值 Qg = 23 nC） • 低有效输出电容 （典型值 Coss(eff.)= 60 pF） • 100% 经过雪崩测试 • 符合 RoHS 标准 应用 • LCD/LED/PDP 电视 • 太阳能逆变器 • AC-DC 电源 D D GD S TO-220 G D S G TO-220F G TO-220F Y形 S S 绝对最大额定值 TC = 25°C 除非另有说明。 符号 FCPF7N60 / FCPF7N60YDTU FCP7N60 参数 600 单位 V VDSS 漏极－源极电压 ID 漏极电流 - 连续 (TC = 25°C) - 连续 (TC = 100°C) IDM 漏极电流 - 脉冲 VGSS 栅极至源极电压 EAS 单脉冲雪崩能量 （注 2） IAR 雪崩电流 （注 1） 7 A EAR 重复雪崩能量 二极管恢复 dv/dt 峰值 （注 1） 8.3 mJ dv/dt PD 功耗 （注 1） 7 4.4 7* 4.4* A A 21 21* A V 230 mJ 4.5 （注 3） (TC = 25°C) - 超过 25°C 时降额  30 V/ns 83 0.67 TJ, TSTG 工作和存储温度范围 TL 用于焊接的最高引脚温度，距离外壳 1/8”，持续 5 秒 31 0.25 W W/°C -55 至 +150 °C 300 °C * 漏极电流受限于最大结温 热性能 符号 RJC RJA FCP7N60 参数 FCPF7N60 / FCPF7N60YDTU 结至外壳热阻最大值 1.5 4.0 结至环境热阻最大值 62.5 62.5 © 2005 飞兆半导体公司 FCP7N60 / FCPF7N60 Rev. C1 1 单位 °C/W www.fairchildsemi.com FCP7N60 / FCPF7N60 — N 沟道 SuperFET® MOSFET 2014 年 1 月 器件编号 FCP7N60 顶标 FCP7N60 FCPF7N60 FCPF7N60YDTU 封装 TO220 包装方法 塑料管 卷尺寸 不适用 带宽 不适用 数量 50 单元 FCPF7N60 TO220F 塑料管 不适用 不适用 50 单元 FCPF7N60 TO-220F （Y 形） 塑料管 不适用 不适用 50 单元 否则电气特性 TC = 25°C 除非另有说明。 符号 参数 工作条件 最小值 典型值 最大值 单位 VGS = 0 V, ID = 250 A, TJ = 25°C 600 -- -- V 关断特性 BVDSS 漏极－源极击穿电压 VGS = 0 V, ID = 250 A, TJ = 150°C -- 650 -- V BVDSS / TJ 击穿电压温度系数 ID = 250 A，参考 25°C -- 0.6 -- V/°C BVDS 漏源极雪崩击穿电压 VGS = 0 V, ID = 7 A -- 700 -- V IDSS 零栅极电压漏极电流 VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C --- --- 1 10 A A IGSSF 栅极 - 体漏电流，正向 VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR 栅极 - 体漏电流，反向 VGS = -30 V, VDS = 0 V -- -- -100 nA VGS(th) 栅极阈值电压 VDS = VGS, ID = 250 A 3.0 -- 5.0 V RDS(on) 漏极－源极 导通电阻 VGS = 10 V, ID = 3.5 A -- 0.53 0.6  gFS 正向跨导 VDS = 40 V, ID = 3.5 A -- 6 -- S Ciss 输入电容 710 920 pF 输出电容 VDS = 25 V, VGS = 0 V, f = 1 MHz -- Coss -- 380 500 pF Crss 反向传输电容 -- 34 -- pF Coss 输出电容 VDS = 480 V, VGS = 0 V, f = 1 MHz -- 22 29 pF Coss(eff.) 有效输出电容 VDS = 0 V 至 400 V, VGS = 0 V -- 60 -- pF td(on) 导通延迟时间 35 80 ns 开通上升时间 VDD = 300 V, ID = 7 A, VGS = 10 V, RG = 25  -- tr -- 55 120 ns td(off) 关断延迟时间 -- 75 160 ns tf 关断下降时间 -- 32 75 ns Qg 总栅极电荷 Qgs 栅极至源极电荷 Qgd 栅极至漏极电荷 导通特性 动态特性 开关特性 （说明 4） VDS = 480 V, ID = 7 A, VGS = 10 V （说明 4） -- 23 30 nC -- 4.2 5.5 nC -- 11.5 -- nC 漏极 - 源极二极管特性和最大额定值 IS 漏极 - 源极二极管最大正向连续电流 -- -- 7 A ISM 漏极 - 源极二极管最大正向脉冲电流 -- -- 21 A VSD 漏极 - 源极二极管正向电压 VGS = 0 V, IS = 7 A -- -- 1.4 V trr 反向恢复时间 -- 360 -- ns Qrr 反向恢复电荷 VGS = 0 V, IS = 7 A, dIF/dt =100 A/s -- 4.5 -- C 注意： 1. 重复额定值：脉冲宽度受限于最大结温。 2. IAS = 3.5 A， VDD = 50 V， RG = 25 ，启动 TJ = 25°C。 3. ISD  7 A， di/dt  200 A/s， VDD  BVDSS，启动 TJ = 25°C。 4. 本质上独立于工作温度的典型特性。 © 2005 飞兆半导体公司 FCP7N60 / FCPF7N60 Rev. C1 2 www.fairchildsemi.com FCP7N60 / FCPF7N60 — N 沟道 SuperFET® MOSFET 封装标识与定购信息 图 1. 导通区域特性 图 2. 传输特性 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 0 10 Notes : 1. 250s Pulse Test 2. TC = 25C -1 10 ID , Drain Current [A] ID, Drain Current [A] 1 10 150C 25C 0 10 -55C Note 1. VDS = 40V 2. 250s Pulse Test 10 -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 图 3. 导通电阻变化与漏极电流和栅极电压 图 4. 体二极管正向电压变化与源极电流和温度的 关系 2.0 IDR , Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 1.8 1.6 1.4 VGS = 10V 1.2 1.0 0.8 0.6 VGS = 20V 0.4 0.2 0.0 1 10 0 10 150C 25C Notes : 1. VGS = 0V 2. 250s Pulse Test Note : TJ = 25C -1 0 5 10 15 10 20 0.2 0.4 0.6 ID, Drain Current [A] 0.8 图 5. 电容特性 VGS, Gate-Source Voltage [V] Capacitance [pF] 1.6 VDS = 100V Crss = Cgd 2000 Coss Notes : 1. VGS = 0 V Ciss 2. f = 1 MHz Crss 0 10 10 VDS = 250V 10 VDS = 400V 8 6 4 2 Note : ID = 7A 0 1 0 5 10 15 20 25 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] © 2005 飞兆半导体公司 FCP7N60 / FCPF7N60 Rev. C1 1.4 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd 0 -1 10 1.2 图 6. 栅极电荷 3000 1000 1.0 VSD , Source-Drain Voltage [V] 3 www.fairchildsemi.com FCP7N60 / FCPF7N60 — N 沟道 SuperFET® MOSFET 典型性能特征 FCP7N60 / FCPF7N60 — N 沟道 SuperFET® MOSFET 典型性能特征 （接上页） 图 7. 击穿电压变化与温度 图 8. 导通电阻变化与温度 3.0 RDS(ON), (Normalized) 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2. ID = 250A Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 0.5 2. ID = 3.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 TJ, Junction Temperature [C] 图 9-1. 用于 FCP7N60 最大安全工作区 2 2 10 Operation in This Area is Limited by R DS(on) 100 us 1 10 1 ms 10 ms DC 0 10 Notes : 1. TC = 25C -1 10 100 150 200 Operation in This Area is Limited by R DS(on) 100 us 1 10 1 ms 10 ms 100 ms 0 10 DC Notes : 1. TC = 25C -1 10 2. TJ = 150C 2. TJ = 150C 3. Single Pulse 3. Single Pulse -2 10 50 图 9-2. 用于 FCPF7N60 最大安全工作区 ID, Drain Current [A] ID, Drain Current [A] 10 0 TJ, Junction Temperature [C] -2 0 1 10 2 10 10 3 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] 图 10. 最大漏极电流与壳体温度 10.0 ID, Drain Current [A] 7.5 5.0 2.5 0.0 25 50 75 100 125 150 TC, Case Temperature [? ] © 2005 飞兆半导体公司 FCP7N60 / FCPF7N60 Rev. C1 4 www.fairchildsemi.com FCP7N60 / FCPF7N60 — N 沟道 SuperFET® MOSFET 典型性能特征 （接上页） 图 11-1. FCP7N60 的瞬态热响应曲线 0 D = 0 .5 0 .2 N o te s : 1 . Z  J C (t) = 1 .5  C /W M a x. 0 .1 10 -1 2 . D u ty F a c to r, D = t 1 /t 2 0 .0 5 3 . T JM - T C = P D M * Z  J C (t) 0 .0 2 0 .0 1 PDM JC ZJC [oC/W] Z (t)， (t),热响应 Thermal Response 10 10 -2 10 t1 s in g le p u ls e -5 10 -4 10 -3 10 -2 10 t2 -1 10 0 10 1 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] 图 11-2. FCPF7N60 的瞬态热响应曲线 0 0 .2 0 .1 N o te s : 1 . Z  J C (t) 4 .0  C /W M a x. 0 .0 5 10 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z  J C (t) 0 .0 2 -1 0 .0 1 PDM JC ZJC [oC/W] Z (t)， (t),热响应 Thermal Response D = 0 .5 10 t1 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] © 2005 飞兆半导体公司 FCP7N60 / FCPF7N60 Rev. C1 5 www.fairchildsemi.com 50KΩ 200nF 12V FCP7N60 / FCPF7N60 — N 沟道 SuperFET® MOSFET VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = ??3mA Charge 图 12. 栅极电荷测试电路与波形 VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off 图 13. 阻性开关测试电路与波形 BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp tp Time 图 14. 非箝位感性开关测试电路与波形 © 2005 飞兆半导体公司 FCP7N60 / FCPF7N60 Rev. C1 6 www.fairchildsemi.com FCP7N60 / FCPF7N60 — N 沟道 SuperFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 图 15. 二极管恢复 dv/dt 峰值测试电路与波形 © 2005 飞兆半导体公司 FCP7N60 / FCPF7N60 Rev. C1 7 www.fairchildsemi.com A B 10.36 9.96 B 3.28 3.08 7.00 3.40 3.20 2.66 2.42 0.70 6.88 6.48 1 X 45° B 16.00 15.60 1 R0.30 3 2.96 2.56 R0.30 1.47 1.24 10.45 9.45 B 2.14 16.07 15.67 B 10.00 9.00 0.90 0.70 0.50 M 2.54 A B 2.54 B 4.00 MIN B B 4.90 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. DRAWING FILE NAME: TO220Q03REV2 0.60 0.45 6.00 4.00 SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. B A 10.36 9.96 B 3.28 3.08 7.00 3.40 3.20 2.66 2.42 0.70 SEE NOTE "F" SEE NOTE "F" 6.88 6.48 1 X 45° B 16.00 15.60 16.07 15.67 (3.23) B 1 2.14 3 1.47 1.24 2.96 2.56 0.90 0.70 10.05 9.45 0.50 M A 30° 0.45 0.25 2.54 B 2.54 B 4.90 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. OPTION 1 - WITH SUPPORT PIN HOLE. OPTION 2 - NO SUPPORT PIN HOLE. G. DRAWING FILE NAME: TO220M03REV5 0.60 0.45 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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