FDB12N50FTM-WS

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Other names and brands may be claimed as the property of others. N-Channel UniFETTM FRFET® MOSFET 500 V, 11.5 A, 700 m Description Features • RDS(on) = 590 m (Typ.) @ VGS = 10 V, ID = 6 A • Low Gate Charge (Typ. 21 nC) • Low Crss (Typ. 11 pF) • 100% Avalanche Tested • Improve dv/dt Capability • RoHS Compliant Applications • Lighting • Uninterruptible Power Supply • AC-DC Power Supply UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D D G S G D2-PAK MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol S Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy - Continuous (TC = 25oC) Unit V ±30 V 11.5 - Continuous (TC = 100oC) - Pulsed FDB12N50FTM-WS 500 A 6.9 (Note 1) 46 A (Note 2) 456 mJ IAR Avalanche Current (Note 1) 11.5 A EAR Repetitive Avalanche Energy (Note 1) 16.5 mJ dv/dt Peak Diode Recovery dv/dt 20 V/ns (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL - Derate above 25oC 165 W 1.33 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol RJC RJA Parameter FQB12N50FTM_WS Thermal Resistance, Junction to Case, Max 0.75 Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 Thermal Resistance, Junction to Ambient (1 in2 pad of 2 oz copper), Max. ©2008 Semiconductor Components Industries, LLC. October-2017,Rev.3 Unit oC/W 40 Publication Order Number: FDB12N50F/D FDB12N50F — N-Channel UniFETTM FRFET® MOSFET FDB12N50F Device Marking FDB12N50F Device FDB12N50FTM_WS Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 500 - - V - 0.5 - V/oC Off Characteristics BVDSS BVDSS / TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25oC VDS = 500V, VGS = 0V - - 10 VDS = 400V, TC = 125oC - - 100 VGS = ±30V, VDS = 0V - - ±100 A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250A 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10V, ID = 6A - 0.59 0.7  gFS Forward Transconductance VDS = 40V, ID = 6A - 12 - S VDS = 25V, VGS = 0V f = 1MHz - 1050 1395 pF - 135 180 pF - 11 17 pF - 21 30 nC - 6 - nC - 9 - nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 400V, ID = 11.5A VGS = 10V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 11.5A RG = 25 (Note 4) - 21 50 ns - 45 100 ns - 50 110 ns - 35 80 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 11.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 46 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 11.5A - - 1.5 V trr Reverse Recovery Time 134 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 11.5A dIF/dt = 100A/s - 0.37 - C Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 11.5A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics www.onsemi.com 2 FDB12N50F — N-Channel UniFETTM FRFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 30 30 ID,Drain Current[A] 10 ID,Drain Current[A] VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 1 o 25 C *Notes: 1. 250s Pulse Test 0.1 * Notes : 1. VDS = 20V 2. 250s Pulse Test o 0.05 0.1 2. TC = 25 C 1 VDS,Drain-Source Voltage[V] 1 20 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.9 4 5 6 7 VGS,Gate-Source Voltage[V] 100 0.8 0.7 VGS = 10V VGS = 20V 0.6 o 150 C 10 o 25 C Notes: 1. VGS = 0V o 0.5 * Note : TJ = 25 C 0 6 12 ID, Drain Current [A] 1 0.0 18 2. 250s Pulse Test 0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V] 2.0 Figure 6. Gate Charge Characteristics 10 Coss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss * Note: 1. VGS = 0V 2. f = 1MHz VGS, Gate-Source Voltage [V] Figure 5. Capacitance Characteristics 2000 1500 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature IS, Reverse Drain Current [A] RDS(on) [], Drain-Source On-Resistance o 150 C 1000 500 Crss 0 0.1 1 10 VDS, Drain-Source Voltage [V] 30 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 0 www.onsemi.com 3 * Note : ID = 11.5A 0 4 8 12 16 Qg, Total Gate Charge [nC] 20 24 FDB12N50F — N-Channel UniFETTM FRFET® MOSFET Typical Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area 100 20s ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 10 1ms 10ms DC 1 Operation in This Area is Limited by R DS(on) *Notes: 0.1 0.9 -50 0 50 100 150 o TJ, Junction Temperature [ C] o 1. TC = 25 C * Notes : 1. VGS = 0V 2. ID = 250A 0.8 -100 100s o 0.01 200 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] Figure 9. Maximum Drain Current vs. Case Temperature 12 8 6 4 2 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve 1 Z Response [o] C/W] Thermal Response [ZJC JC(t), Thermal ID, Drain Current [A] 10 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t1 0.01 0.01 Single pulse 0.001 -5 10 t2 *Notes: o 1. ZJC(t) = 0.75 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] t1, Square Wave Pulse Duration [sec] www.onsemi.com 4 1 10 1000 FDB12N50F — N-Channel UniFETTM FRFET® MOSFET Typical Characteristics (Continued) FDB12N50F — N-Channel UniFETTM FRFET® MOSFET Figure 11. Gate Charge Test Circuit & Waveform IG = const. Figure 12. Resistive Switching Test Circuit & Waveforms VDS RG V 10V GS RL VDS 90% VDD VGS DUT VGS 10% td(on) tr t on td(off) tf t off Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms VGS www.onsemi.com 5 DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop www.onsemi.com 6 VDD FDB12N50F — N-Channel UniFETTM FRFET® MOSFET Figure 14. Peak Diode Recovery dv/dt Test Circuit & Waveforms FDB12N50F — N-Channel UniFETTM FRFET® MOSFET Mechanical Dimensions TO-263 2L (D2PAK) Figure 15. 2LD,TO263, Surface Mount Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. Dimension in Millimeters www.onsemi.com 7 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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