FDD18N20LZ

MOSFET – N-Channel, UniFETt 200 V, 16 A, 125 mW FDD18N20LZ Description www.onsemi.com UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G S DPAK3 (TO−252 3 LD) CASE 369AS Features • • • • • • • MARKING DIAGRAM RDS(on) = 125 mW (Typ.) @ VGS = 10 V, ID = 8 A Low Gate Charge (Typ. 30 nC) Low CRSS (Typ. 25 pF) 100% Avalanche Tested Improved dv/dt Capability ESD Improved Capability These Device is Pb−Free and is RoHS Compliant $Y&Z&3&K FDD 18N20LZ Applications FDD18N20LZ $Y &Z &3 &K • LED TV • Consumer Appliances • Uninterruptible Power Supply = Specific Device Code = ON Semiconductor Logo = Assembly Plant Code = 3−Digit Date Code = 2−Digits Lot run Traceability Code D G S N−Channel MOSFET ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2011 September, 2020 − Rev. 3 1 Publication Order Number: FDD18N20LZ/D FDD18N20LZ MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol FDD18N20LZ Unit VDSS Drain to Source Voltage 200 V VGSS Gate to Source Voltage ±20 V Continuous (TC = 25°C) 16 A Continuous (TC = 100°C) 9.6 Pulsed 64 A ID Parameter Drain Current IDM Drain Current (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) 320 mJ IAR Avalanche Current (Note 1) 16 A EAR Repetitive Avalanche Energy (Note 1) 8.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns (TC = 25°C) 89 W Derate above 25°C 0.7 W/°C −55 to +150 °C 300 °C PD TJ, TSTG TL Power Dissipation Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. L = 2.5 mH, IAS = 16 A, VDD = 50 V, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 16 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter FDD18N20LZ Unit °C/W RqJC Thermal Resistance, Junction to Case, Max. 1.4 RqJA Thermal Resistance, Junction to Ambient, Max. 83 www.onsemi.com 2 FDD18N20LZ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit ID = 250 mA, VGS = 0 V, TJ = 25°C 200 − − V ID = 250 mA, Referenced to 25°C − 0.2 − V/°C VDS = 200 V, VGS = 0 V − − 1 mA VDS = 160 V, TC = 125°C − − 10 VGS = ±16 V, VDS = 0 V − − ±10 mA 1.0 − 2.5 V W OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS / D Breakdown Voltage Temperature Coefficient TJ DSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current I ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 8 A − 0.10 0.125 VGS = 5 V, ID = 8 A − 0.11 0.13 VDS = 20 V, ID = 2 A − 11 − S VDS = 25 V, VGS = 0 V f = 1 MHz − 1185 1575 pF − 190 255 pF − 25 40 pF − 30 40 nC − 3.5 − nC − 8.5 − nC − 15 40 ns − 20 50 ns gFS Forward Transconductance DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 200 V, ID = 16 A, VGS = 10 V (Note 4) SWITCHING CHARACTERISTICS VDD = 100 V, ID = 16 A, VGS = 10 V, RG = 25 W (Note 4) td(on) Turn−On Delay Time tr Turn−On Rise Time td(off) Turn−Off Delay Time − 135 280 ns Turn−Off Fall Time − 50 110 ns Maximum Continuous Drain to Source Diode Forward Current − − 16 A ISM Maximum Pulsed Drain to Source Diode Forward Current − − 64 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 4 A − − 1.4 V trr Reverse Recovery Time − 105 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 4 A dIF/dt = 100 A/ms − 0.4 − mC tf DAIN−SOURCE DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FDD18N20LZ TYPICAL PERFORMANCE CHARACTERISTICS 100 VGS = 10 V 7V 5V 4.5 V 4V 3.5 V 3V 10 ID, Drain Current [A] ID, Drain Current [A] 100 1 10 150°C 25°C 1 *Notes: 1. VDS = 20 V −55°C 2. 250 ms Pulse Test *Notes: 1. 250 ms Pulse Test 2. TC = 25°C 0.1 0.01 0.1 1 0.1 10 0 VDS, Drain−Source Voltage [V] 0.36 8 100 IS, Reverse Drain Current [A] RDS(on),Drain−Source On−Resistance [W] 6 Figure 2. Transfer Characteristics 0.30 0.24 VGS = 10 V 0.18 VGS = 20 V 0.12 150°C 10 25°C *Note: TJ = 25°C 0 10 20 30 40 50 1 0.4 60 ID, Drain Current [A] 0.8 1.0 1.2 1.4 1.6 1.8 VGS, Gate−Source Voltage [V] 10 1000 10 0.1 0.6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 5000 100 *Notes: 1. VGS = 0 V 2. 250 ms Pulse Test VSD, Body Diode Forward Voltage [V] Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage Capacitances [pF] 4 VGS, Gate−Source Voltage [V] Figure 1. On−Region Characteristics 0.06 2 Ciss Coss *Note: 1. VGS = 0 V 2. f = 1 MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 Crss 10 VDS = 50 V VDS = 100 V VDS = 160 V 8 6 4 2 0 30 VDS, Drain−Source Voltage [V] *Note: ID = 16 A 0 7 14 21 28 Qg, Total Voltage Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 35 FDD18N20LZ 2.4 1.15 RDS(on),Drain−Source On−Resistance [Normalized] BVDSS,Drain−Source Breakdown Voltage [Normalized] TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0 V 2. ID = 250 ms 0.90 0.85 −80 −40 0 40 80 120 2.0 1.6 1.2 0.4 −80 160 TJ, Junction Temperature [°C] 40 80 120 160 16 100 ms Operation in this Area is Limited by RDS(ON) *Notes: 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 1 1 ms 10 ms DC 10 100 12 ID, Drain Current [A] 30 ms 10 8 4 0 25 1000 VDS, Drain−Source Voltage [V] 50 75 100 125 TC, Case Temperature [°C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 2 ZqJC(t), Thermal Response [°C/W] ID, Drain Current [A] 0 Figure 8. On−Resistance Variation vs. Temperature 100 0.1 0.1 −40 TJ, Junction Temperature [°C] Figure 7. Breakdown Voltage Variation vs. Temperature 1 *Notes: 1. VGS = 10 V 2. ID = 8 A 0.8 1 0.5 0.2 PDM 0.1 0.1 t1 0.05 0.02 0.01 Single pulse 0.01 −5 10 t2 *Notes: 1. ZqJC(t) = 1.4°C/W Max. 2. Duty Factor, D = t1 / t2 3. TJM − TC = PDM x ZqJC(t) 10 −4 10 −3 10 −2 t1, Rectangular Pulse Duration [s] Figure 11. Transient Thermal Response Curve www.onsemi.com 5 10 −1 1 150 FDD18N20LZ PACKAGE MARKING ANDORDERING INFORMATION Part Number FDD18N20LZ Top Mark Package Reel Size Tape Width Shipping† FDD18N20LZ DPAK3 (TO−252 3 LD) (Pb−Free) 330 mm 16 mm 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. UniFET is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13810G DPAK3 (TO−252 3 LD) DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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