FDD8444L_F085

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Other names and brands may be claimed as the property of others. ® N-Channel PowerTrench MOSFET 40V, 50A, 6.0mΩ Features Applications „ Typ rDS(on) = 3.8mΩ at VGS = 5V, ID = 50A „ Automotive Engine Control „ Typ Qg(tot) = 46nC at VGS = 5V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers „ Low Qrr Body Diode „ Electronic Transmission „ UIS Capability (Single Pulse/ Repetitive Pulse) „ Distributed Power Architecture and VRMs „ Qualified to AEC Q101 „ Primary Switch for 12V and 24V systems A REE I DF M ENTATIO LE N MP LE „ RoHS Compliant ©2009 Semiconductor Components Industries, LLC. September-2017, Rev. 1 Publication Order Number: FDD8444L-F085/D FDD8444L-F085 N-Channel PowerTrench® MOSFET FDD8444L-F085 Symbol Drain to Source Voltage VDSS VGS Parameter PD ±20 V (Note 1) 50 Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) 16 Pulsed EAS Units V Gate to Source Voltage Drain Current Continuous (TC < 150°C, VGS = 10V) ID Ratings 40 A See Figure 4 Single Pulse Avalanche Energy (Note 2) 295 mJ Power Dissipation 153 W Derate above 25oC 1.02 W/oC -55 to +175 oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case 2 Thermal Resistance, Junction to Ambient TO-252, 1in copper pad area 0.98 o C/W 52 o C/W Package Marking and Ordering Information Device Marking FDD8444L Device FDD8444L-F085 Package TO-252AA Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V 40 - - - - 1 - - 250 VGS = ±20V - - ±100 nA VGS = VDS, ID = 250µA 1 1.8 3 V ID = 50A, VGS= 10V - 3.5 5.2 VDS = 32V, VGS = 0V TJ = 150oC µA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance ID = 50A, VGS= 5V - 3.8 6.0 ID = 50A, VGS= 4.5V - 4.0 6.5 ID = 50A, VGS= 5V, TJ = 175oC - 6.8 10.7 VDS = 25V, VGS = 0V, f = 1MHz - 5530 - pF - 605 - pF pF mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 400 - RG Gate Resistance f = 1MHz - 1.7 - Ω Qg(TOT) Total Gate Charge at 5V VGS = 0 to 5V - 46 60 nC Qg(TH) Threshold Gate Charge VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller“ Charge VDD = 20V ID = 50A Ig = 1.0mA www.onsemi.com 2 - 5.4 7 nC - 16.3 - nC - 10.9 - nC - 21 - nC FDD8444L-F085 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units ns Switching Characteristics ton Turn-On Time - - 104 td(on) Turn-On Delay Time - 18.7 - ns tr Turn-On Rise Time - 46 - ns td(off) Turn-Off Delay Time - 42 - ns tf Turn-Off Fall Time - 19.2 - ns toff Turn-Off Time - - 96 ns ISD = 50A - 0.9 1.25 ISD = 25A - 0.8 1.0 VDD = 20V, ID = 50A VGS = 5V, RGS = 2Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 50A, dIF/dt = 100A/µs Notes: 1: Package current limitation is 50A. 2: Starting TJ = 25oC, L = 0.37mH, IAS = 40A. www.onsemi.com 3 V - 34 44 ns - 29 38 nC FDD8444L-F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25oC unless otherwise noted 140 1.0 120 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 VGS = 10V CURRENT LIMITED BY PACKAGE 100 80 VGS = 5V 60 40 20 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 0 25 175 Figure 1. Normalized Power Dissipation vs Case Temperature 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.01 -5 10 -4 -3 10 -2 10 10 t, RECTANGULAR PULSE DURATION(s) -1 0 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 4000 IDM, PEAK CURRENT (A) VGS = 10V 1000 TC = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 100 10 -5 10 SINGLE PULSE -4 10 -3 -2 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 4 -1 10 0 10 FDD8444L-F085 N-Channel PowerTrench® MOSFET Typical Characteristics 500 IAS, AVALANCHE CURRENT (A) 10us 100 100us 10 LIMITED BY PACKAGE 1 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms SINGLE PULSE 10ms TJ = MAX RATED o TC = 25 C ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 175 C TJ = 25oC TJ = -55oC 20 0 0.5 1.0 1.5 1 2.0 2.5 3.0 10 100 VGS = 5V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 150 VGS = 3.5V VGS = 4V 100 50 VGS = 3V 0 3.5 VGS = 10V 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics 30 ID = 50A 25 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 20 15 10 TJ = 175oC 5 0 TJ = 25oC 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage 1000 tAV, TIME IN AVALANCHE (ms) 200 o 40 0.1 Figure 6. Unclamped Inductive Switching Capability VDD = 5V 60 o STARTING TJ = 150 C 1 0.01 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 80 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 10 100 Figure 5. Forward Bias Safe Operating Area 100 o STARTING TJ = 25 C DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 10 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 1000 5 1.8 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 50A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature www.onsemi.com 5 FDD8444L-F085 N-Channel PowerTrench® MOSFET Typical Characteristics 1.10 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = 250µA 1.0 0.8 0.6 0.4 0.2 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature CAPACITANCE (pF) 10000 Ciss Coss 1000 Crss f = 1MHz VGS = 0V 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 Figure 13. Capacitance vs Drain to Source Voltage ID = 250uA 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) NORMALIZED GATE THRESHOLD VOLTAGE 1.4 10 ID = 50A VDD = 15V 8 VDD = 20V 6 VDD = 25V 4 2 0 0 20 40 60 Qg, GATE CHARGE(nC) 80 100 Figure 14. Gate Charge vs Gate to Source Voltage www.onsemi.com 6 FDD8444L-F085 N-Channel PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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