FDD9511L-F085

MOSFET - P-Channel, PowerTrench), Logic Level -40 V, -25 A, 21 mW FDD9511L-F085 Features • • • • • www.onsemi.com Typ rDS(on) = 17 mW at VGS = −10 V; ID = −25 A Typ Qg(tot) = 17 nC at VGS = −10 V; ID = −25 A UIS Capability Qualified to AEC Q101 These Devices are Pb−Free and are RoHS Compliant D G DPAK TO−252 CASE 369AS Applications • • • • • • • Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electrical Power Steering Integrated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12 V Systems D G ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain to Source Voltage VDSS −40 V Gate to Source Voltage VGS ±16 V Drain Current − Continuous (VGS = −10 V) (TC = 25°C) (Note 1) ID −25 A Pulsed Drain Current (TC = 25°C) ID See Figure 4 A Single Pulse Avalanche Energy (Note 2) EAS 25 mJ Power Dissipation PD 48.4 W Derate above 25°C PD 0.32 W/°C TJ, TSTG −55 to +175 °C Thermal Resistance (Junction to Case) RqJC 3.1 °C/W Maximum Thermal Resistance (Junction to Ambient) (Note 3) RqJA 52 °C/W Operating and Storage Temperature Range S S ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by wirebond configuration 2. Starting Tj = 25°C, L = 0.08 mH, IAS = −25 A, VDD = −40 V during inductor charging and VDD = 0 V during time in avalanche 3. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqJA is determined by the user’s board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2 oz copper. © Semiconductor Components Industries, LLC, 2018 November, 2020 − Rev. 0 1 Publication Order Number: FDD9511L−F085/D FDD9511L−F085 PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Reel Size Tape Width Quantity FDD9511L−F085 FDD9511L D−PAK (TO−252) 13″ 12 mm 2500 Units ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit −40 − − V TJ = 25_C − − −1 mA TJ = 175_C (Note 4) − − −1 mA VGS = ±16 V − − ±100 nA OFF CHARACTERISTICS BVDSS IDSS IGSS Drain to Source Breakdown Voltage VGS = 0 V, ID = −250 mA Drain to Source Leakage Current VDS = −40 V, VGS = 0 V Gate to Source Leakage Current ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA −1 −1.8 −3 V RDS(on) Drain to Source On−Resistance VGS = −4.5 V, ID = −12.5 A, TJ = 25_C − 24 32 mW VGS = −10 V, ID = −25 A TJ = 25_C − 17 21 mW TJ = 175_C (Note 4) − 28 36 mW − 1200 − pF DYNAMIC CHARACTERISTICS VDS = −20 V, VGS = 0 V, f = 100 KHz Ciss Input Capacitance Coss Output Capacitance − 480 − pF Crss Reverse Transfer Capacitance − 27 − pF Rg Gate Resistance VGS = −0.5 V, f = 1 MHz − 38 − W Qg(tot) Total Gate Charge VGS = 0 V to −10 V − 17 23 nC Qg(−4.5) Total Gate Charge VDD = −20 V, ID = −25 A VGS = 0 V to −4.5 V − 8 − nC VGS = 0 V to −1 V − 1 − nC − 4 − nC − 2.5 − nC − − 45 ns − 7 − ns Qg(th) Threshold Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = −20 V, ID = −25 A SWITCHING CHARACTERISTICS ton Turn-On Time VDD = −20 V, ID = −25 A, VGS = −10 V, RGEN = 6 W td(on) Turn-On Delay Time tr Turn-On Rise Time − 24 − ns td(off) Turn-Off Delay Time − 120 − ns Turn-Off Fall Time − 40 − ns Turn-Off Time − − 235 ns VGS = 0 V, ISD = −25 A − −0.95 −1.25 V VGS = 0 V, ISD = −12.5 A − −0.9 −1.2 V IF = −25 A, dISD/dt = 100 A/ms − 36 54 ns − 22 33 nC tf toff DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Voltage Trr Reverse Recovery Time Qrr Reverse Recovery Charge Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production www.onsemi.com 2 FDD9511L−F085 TYPICAL CHARACTERISTICS NORMALIZED THERMAL IMPEDANCE (ZqJC) 45 0.8 0.6 0.4 0.2 0 Current Limited by Package 40 1.0 −ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 35 30 25 VGS = −10 V 20 15 10 5 25 0 75 50 100 125 150 0 175 25 50 75 125 100 150 175 TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C) Figure 1. Normalized Power Dissipation vs. Case Temperature Figure 2. Maximum Continuous Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 0.2 PDM 0.1 0.1 0.05 t1 0.02 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z qJC x RqJC + TC 0.01 0.01 Single Pulse 0.00001 0.0001 0.001 0.01 1 0.1 10 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance 1000 −IDM, PEAK CURRENT (A) VGS = −10 V T C = 25 o C FOR TEMPERATURES ABOVE 25 oC DERATE PEAK CURRENT AS FOLLOWS: I = I 25 175 − T C 150 100 Single Pulse 10 0.00001 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (s) Figure 4. Peak Current Capability www.onsemi.com 3 0.1 1 10 FDD9511L−F085 TYPICAL CHARACTERISTICS 100 200 Operation in this Area may be Limited by Package 0.1 1 10 0.001 0.01 0.1 10 1 100 Figure 6. Unclamped Inductive Switching Capability TJ = 25°C TJ = 175°C 45 30 VDS = −5 V 15 2 3 4 6 5 7 100 10 1 0.1 TJ = 175°C 0.01 0.001 8 VGS = 0 V TJ = −55°C TJ = 25°C 0 0.2 0.4 0.6 0.8 1.0 −VGS, GATE−TO−SOURCE VOLTAGE (V) −VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 120 −7.0 V 90 −5.0 V −4.5 V 60 −4.0 V −3.5 V 30 Pulse Width = 250 ms TJ = 25°C 1 2 3 1.2 120 VGS = −10 V 0 NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 60 0 Starting TJ = 150°C tAV, TIME IN AVALANCHE (mS) TJ = −55°C 1 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 75 0 If R = 0, tAV=(L)(IAS)/(1.3*Rated BVDSS−VDD) If R ≠ 0, tAV=(L/R)In[(IAS*R)/(1.3*Rated BVDSS−VDD)+1] Starting TJ = 25°C 1 100 −IS, REVERSE DRAIN CURRENT (A) −ID, DRAIN CURRENT (A) 10 ms 100 ms Operation in this Area may be Limited by RDS(on) 90 −ID, DRAIN CURRENT (A) 1 ms 1 0.1 −IAS, AVALANCHE CURRENT (A) 100 ms 10 −ID, DRAIN CURRENT (A) −ID, DRAIN CURRENT (A) 100 4 Pulse Width = 250 ms TJ = 175°C −7.0 V 60 −4.5 V −5.0 V −4.0 V −3.5 V 30 0 5 VGS = −10 V 90 0 1 2 3 4 −VDS, DRAIN−SOURCE VOLTAGE (V) −VDS, DRAIN−SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics www.onsemi.com 4 5 FDD9511L−F085 TYPICAL CHARACTERISTICS 1.8 RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE RDS(on), ON−RESISTANCE (mW) 120 ID = −25 A 100 Pulse Duration = 250 ms Duty Cycle = 0.5% Max 80 60 TJ = 175°C 40 TJ = 25°C 20 0 2 4 3 5 7 6 9 8 10 1.4 1.2 1.0 VGS = −10 V ID = −25 A 0.8 0.6 −80 40 80 120 160 Figure 11. RDS(on) vs. Gate Voltage Figure 12. Normalized RDS(on) vs. Junction Temperature 200 1.10 NORMALIZED DRAIN−TO−SOURCE BREAKDOWN VOLTAGE ID = −1 mA 1.05 1.00 0.8 0.6 0.95 ID = −250 mA 0.4 −80 −40 0 40 80 120 160 0.90 −80 200 −VGS, GATE−TO−SOURCE VOLTAGE (V) 10,000 Ciss 1000 Coss 100 Crss 10 VGS = 0 V f = 100 kHz 1 0 40 80 160 120 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature Figure 13. Normalized Gate Threshold Voltage vs. Temperature 0.1 −40 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) CAPACITANCE (pF) 0 TJ, JUNCTION TEMPERATURE (°C) 1.0 1 −40 VGS, GATE TO SOURCE VOLTAGE (V) 1.2 NORMALIZED GATE THRESHOLD VOLTAGE Pulse Duration = 250 ms Duty Cycle = 0.5% Max 1.6 10 100 10 VDD = −16 V VDD = −24 V 8 6 VDD = −20 V 4 2 0 0 4 8 12 16 Qg, GATE CHARGE (nC) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 16. Gate Charge vs. Gate−to−Source Voltage Figure 15. Capacitance vs. Drain−to−Source Voltage www.onsemi.com 5 20 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13810G DPAK3 (TO−252 3 LD) DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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