FDMC8010DC

FDMC8010DC MOSFET – N-Channel, DUAL COOL 33, POWERTRENCH 30 V, 157 A, 1.28 mW www.onsemi.com General Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. D G S D S Pin 1 Top Features • • • • • S DD Bottom PQFN8 3.3X3.3, 0.65P CASE 483AY DUAL COOL 33 DUAL COOL Top Side Cooling PQFN Package Max rDS(on) = 1.28 mW at VGS = 10 V, ID = 37 A Max rDS(on) = 1.74 mW at VGS = 4.5 V, ID = 32 A High Performance Technology for Extremely Low rDS(on) These Devices are Pb−Free and are RoHS Compliant MARKING DIAGRAM Applications • Load Switch • Motor Bridge Switch • Synchronous Rectifier &Z&3&K 8010 MOSFET MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted) Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Volage (Note 4) ±20 V Drain Current −Continuous −Continuous −Continuous −Pulsed 157 99 37 788 ID TC = 25°C (Note 6) TC = 100°C (Note 6) TA = 25°C (Note 1a) (Note 5) A EAS Single Pulse Avalance Energy (Note 3) 337 mJ PD Power Dissipation TC = 25°C 50 W Power Dissipation TA = 25°C (Note 1a) 3.0 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Unit °C/W Thermal Resistance, Junction to Case (Bottom Drain) 1.3 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 42 July, 2019 − Rev. 2 = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code S D S D S D G D ORDERING INFORMATION Ratings RθJC © Semiconductor Components Industries, LLC, 2016 &Z &3 &K 8010 1 See detailed ordering, marking and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: FDMC8010DC/D FDMC8010DC PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity 8010 FDMC8010DC DUAL COOL 33 13” 12 mm 3000 Units ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 250 mA, VGS = 0 V 30 V 15 ID = 250 mA, referenced to 25°C mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 mA IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 3.0 V ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage DVGS(th)/DTJ Gate to Source Threshold Voltage Temperature Coefficient rDS(on) gFS Static Drain to Source On Resistance VGS = VDS, ID = 250 mA 1.0 1.4 −5 ID = 250 mA, referenced to 25°C mV/°C mW VGS = 10 V, ID = 37 A 0.91 1.28 VGS = 4.5 V, ID = 32 A 1.2 1.74 VGS = 10 V, ID = 37 A, TJ = 125°C 1.34 1.89 VDS = 5 V, ID = 37 A 231 VDS = 15 V, VGS = 0 V, f = 1 MHz 4720 7080 pF 1540 2310 pF 136 205 pF 0.5 1.1 W 15 26 ns 7 14 ns Turn−Off Delay Time 40 64 ns Fall Time 5 10 ns 67 94 nC 32 44 nC Forward Transconductance S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance 0.1 SWITCHING CHARACTERISTICS td(on) tr td(off) tf Turn−On Delay Time Rise Time Qg(TOT) Total Gate Charge at 10 V Qg(TOT) Total Gate Charge at 4.5 V VDD = 15 V, ID = 37 A, VGS = 10 V, RGEN = 6 W VDD = 15 V ID = 37 A Qgs Total Gate Charge 10 nC Qgd Gate to Drain “Miller” Charge 7.5 nC DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.3 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 37 A (Note 2) 0.8 1.3 IF = 37 A, di/dt = 100 A/ms 55 88 ns 48 76 nC trr Reverse Recovery Time Qrr Reverse Recovery Charge www.onsemi.com 2 V FDMC8010DC THERMAL CHARACTERISTICS Thermal Resistance, Junction to Case (Top Source) 5.0 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 2.5 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 42 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 105 RθJA Thermal Resistance, Junction to Ambient (Note 1c) 29 RθJA Thermal Resistance, Junction to Ambient (Note 1d) 40 RθJA Thermal Resistance, Junction to Ambient (Note 1e) 19 RθJA Thermal Resistance, Junction to Ambient (Note 1f) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1g) 30 RθJA Thermal Resistance, Junction to Ambient (Note 1h) 79 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 17 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 26 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 12 RθJA Thermal Resistance, Junction to Ambient (Note 1l) 16 RθJC °C/W NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RθJC is guaranteed by design while RθCA is determined by the user’s board design. b. 105°C/W when mounted on a minimum pad of 2 oz copper a. 42°C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. 3. 4. 5. 6. c. Still air, 20.9x10.4x12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper. d. Still air, 20.9x10.4x12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper. e. Still air, 45.2x41.4x11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in2 pad of 2 oz copper. f. Still air, 45.2x41.4x11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper. g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper. h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper. i. 200FPM Airflow, 20.9x10.4x12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper. j. 200FPM Airflow, 20.9x10.4x12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper. k. 200FPM Airflow, 45.2x41.4x11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in2 pad of 2 oz copper. l. 200FPM Airflow, 45.2x41.4x11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. EAS of 337 mJ is based on starting TJ = 25°C, L = 3 mH, IAS = 15 A, VDD = 30 V, VGS = 10 V, 100% test at L = 0.1 mH, IAS = 49 A. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. Pulse Id measured at 250 ms, refer to Figure 11 SOA graph for more details. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro−mechanical application board design. www.onsemi.com 3 FDMC8010DC TYPICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted 10 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 240 VGS = 10 V 180 VGS = 4.5 V VGS = 3.5 V 120 VGS = 3 V VGS = 2.5 V 60 0 0.0 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 0.5 1.0 1.5 8 6 VGS = 3 V 4 0 2.0 VGS = 10 V 0 60 1.3 1.2 1.1 1.0 0.9 0.8 25 50 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 6 ID = 37 A 4 TJ = 125°C 2 TJ = 25°C 0 75 100 125 150 2 TJ, JUNCTION TEMPERATURE (°C) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5 V 180 TJ = 150°C TJ = 25°C TJ = −55°C 60 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 1 2 6 8 10 Figure 4. On−Resistance vs Gate to Source Voltage 240 0 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature 120 240 8 rDS(ON), DRAIN−TO−SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 1.4 0 180 Figure 2. Normalized On−Resistance vs Drain Current and Gate Voltage ID = 37 A VGS = 10 V 0.7 −75 −50 −25 120 ID, DRAIN CURRENT (A) Figure 1. On−Region Characteristics 1.5 VGS = 4.5 V VGS = 3.5 V 2 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.6 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX VGS = 2.5 V 3 4 240 100 VGS = 0 V 10 TJ = 150°C 1 TJ = 25°C 0.1 TJ = −55°C 0.01 0.001 0.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 4 1.2 FDMC8010DC TYPICAL CHARACTERISTICS (continued) TJ = 25°C Unless Otherwise Noted CAPACITANCE (pF) VDD = 15 V 6 VDD = 20 V VDD = 10 V 4 2 0 14 28 42 56 1000 Coss 100 Crss f = 1 MHz VGS = 0 V 10 0.1 70 1 10 30 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 180 ID, DRAIN CURRENT (A) 100 TJ = 25°C 10 TJ = 100°C TJ = 125°C 144 VGS = 10 V 108 72 VGS = 4.5 V 36 RqJC = 2.5°C/W 1 0.001 ID, DRAIN CURRENT (A) Ciss 8 0 IAS, AVALANCHE CURRENT (A) 10000 ID = 37 A 0.01 0.1 1 10 100 0 25 1000 50 75 100 125 150 tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE (°C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature P(PK), PEAK TRANSIENT POWER (W) VGS, GATE TO SOURCE VOLTAGE (V) 10 2000 1000 100 10 1 10 m s THIS AREA IS LIMITED BY r DS(on) RqJC = 2.5°C/W 1 ms CURVE BENT TO MEASURED DATA TC = 25°C 0.1 0.1 100 m s SINGLE PULSE TJ = MAX RATED 1 10 ms 100 ms 10 100 10000 SINGLE PULSE RqJC = 2.5°C/W TC = 25°C 1000 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 10 −5 10 −4 10 −3 10 −2 10 −1 10 1 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 FDMC8010DC TYPICAL CHARACTERISTICS (continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TJ = 25°C Unless Otherwise Noted 2 1 0.1 0.01 0.001 −5 10 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZqJC (t) = r(t) x R qJC RqJC = 2.5°C/W Peak T J = PDM x Z qJC (t) + T C Duty Cycle, D = t 1 / t 2 SINGLE PULSE −4 10 −3 −2 10 10 −1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction to Case Transient Thermal Response Curve POWERTRENCH and DUAL COOL are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PQFN8 3.3X3.3, 0.65P CASE 483AY ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13674G PQFN8 3.3X3.3, 0.65P DATE 08 SEP 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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