FDN336P-NL

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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDN336P FDN336P Single P-Channel 2.5V Specified PowerTrench® MOSFET Features General Description This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • –1.3 A, –20 V. RDS(ON) = 0.20 Ω @ VGS = –4.5 V • Low gate charge (3.6 nC typical) • High performance trench technology for extremely RDS(ON) = 0.27 Ω @ VGS = –2.5 V low RDS(ON) These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion. • TM SuperSOT -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D D S S G TM SuperSOT -3 G Absolute Maximum Ratings Symbol VDSS TA=25oC unless otherwise noted Parameter Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current – Continuous Maximum Power Dissipation TJ, TSTG Units –20 V ±8 V –1.3 –10 A (Note 1a) 0.5 W (Note 1b) 0.46 (Note 1a) – Pulsed PD Ratings –55 to +150 °C (Note 1a) 250 °C/W (Note 1) 75 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 336 FDN336P 7’’ 8mm 3000 units ©2005 Semiconductor Components Industries, LLC. October-2017, Rev. 4 Publication Order Number: FDN336P/D Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min -20 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V V -1 µA -10 µA VGS = 8 V, VDS = 0 V 100 nA VGS = -8 V, VDS = 0 V -100 nA TJ = 55°C IGSSF Gate - Body Leakage, Forward IGSSR Gate - Body Leakage, Reverse ON CHARACTERISTICS mV /o C -16 (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC -0.4 RDS(ON) Static Drain-Source On-Resistance VGS = -4.5 V, ID = -1.3 A VGS = -2.5 V, I D = -1.1 A On-State Drain Current VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -4.5 V, ID = -2 A -1.5 V mV /oC 3 TJ =125°C ID(ON) -0.9 0.122 0.2 0.18 0.32 0.19 0.27 -5 Ω A 4 S 330 pF 80 pF 35 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -10 V, VGS = 0 V, f = 1.0 MHz (Note 2) VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 6 Ω VDS = -10 V, ID = - 2 A, VGS = -4.5 V 7 15 ns 12 22 ns 16 26 ns 5 12 ns 3.6 5 nC 0.8 nC 0.7 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A (Note) -0.7 -0.42 A -1.2 V Note: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 250oC/W when mounted on a 0.02 in2 pad of 2oz Cu. b. 270oC/W when mounted on a 0.001 in2 pad of 2oz Cu. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. www.onsemi.com 2 Typical Electrical Characteristics 2 8 R DS(on), NORMALIZED VGS = -4.5V -3.5V -3.0V 6 -2.5V 4 -2.0V 2 DRAIN-SOURCE ON-RESISTANCE - ID , DRAIN-SOURCE CURRENT (A) 10 0 0 1 2 3 4 1.8 1.4 -3.0V -3.5V 1.2 -4.0V -4.5V 1 0.8 5 VGS = -2.5 V 1.6 0 2 -VDS , DRAIN-SOURCE VOLTAGE (V) 4 6 8 10 - I D , DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Figure 1. On-Region Characteristics. Drain Current and Gate 0.5 I D = -1.3A 1.4 R DS(ON) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 VGS = -4.5V 1.2 1 0.8 ID = -0.6A 0.4 0.3 0.2 TA= 125°C 0.1 25°C 0 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 0 2 150 6 8 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. Figure 3. On-Resistance Variation with Temperature. 10 VDS = -5V TJ = -55°C 3 - IS , REVERSE DRAIN CURRENT (A) 4 - I D , DRAIN CURRENT (A) 4 - V GS , GATE TO SOURCE VOLTAGE (V) 25°C 125°C 2 1 0 0.5 1 1.5 2 -VGS , GATE TO SOURCE VOLTAGE (V) 2.5 VGS = 0V TJ = 125°C 1 25°C -55°C 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 Typical Electrical Characteristics (continued) 700 I D = -1.3A 400 VDS = -5V 4 CAPACITANCE (pF) -VGS , GATE-SOURCE VOLTAGE (V) 5 -10V -15V 3 2 1 Ciss 200 100 Coss 40 f = 1 MHz VGS = 0 V Crss 0 0 1 2 3 4 0.1 Q g , GATE CHARGE (nC) 2 5 10 20 50 N) S(O RD 3 1m IT LIM 10m 1 100 0.3 0.5 1 3 5 SINGLE PULSE R θJA =270°C/W TA = 25°C 40 ms 1s 10s DC V GS = -4.5V SINGLE PULSE R θJA = 270°C/W T A = 25°C 0.01 0.2 s s POWER (W) 10 30 20 10 10 0 0.0001 30 0.001 0.01 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) -VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. Figure 9. Maximum Safe Operating Area. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID , DRAIN CURRENT (A) 1 Figure 8. Capacitance Characteristics. 30 0.03 0.5 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 0.1 0.2 0.5 D = 0.5 0.2 0.1 0.05 0.02 0.01 R θJA (t) = r(t) * RθJA R θJA = 270 °C/W 0.2 0.1 0.05 P(pk) 0.02 0.01 t1 Single Pulse Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 t2 TJ - TA = P * RθJA (t) 0.005 0.001 0.01 0.1 1 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 10 100 300 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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