November 1998
FDN336P
Single P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Low gate charge (3.6 nC typical).
High performance trench technology for extremely low
RDS(ON).
High power version of industry standard SOT-23 package.
Identical pin out to SOT-23 with 30% higher power handling
capability.
SuperSOTTM-8
SuperSOTTM-6
SOT-23
-1.3 A, -20 V. RDS(ON) = 0.20 Ω @ VGS = -4.5 V
RDS(ON) = 0.27 Ω @ VGS= -2.5 V.
SO-8
SOIC-16
SOT-223
D
D
6
33
S
TM
SuperSOT -3
G
S
G
Absolute Maximum Ratings
TA = 25oC unless other wise noted
Symbol
Parameter
FDN336P
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
- Continuous
-1.3
A
- Pulsed
-10
PD
TJ,TSTG
Maximum Power Dissipation
(Note 1a)
0.5
(Note 1b)
0.46
Operating and Storage Temperature Range
W
-55 to +150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
© 1998 Fairchild Semiconductor Corporation
FDN336P Rev.C
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
-20
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
∆BVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
ID = -250 µA, Referenced to 25 oC
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
V
-1
µA
-10
µA
VGS = 8 V, VDS = 0 V
100
nA
VGS = -8 V, VDS = 0 V
-100
nA
TJ = 55°C
IGSSF
Gate - Body Leakage, Forward
IGSSR
Gate - Body Leakage, Reverse
ON CHARACTERISTICS
mV /o C
-16
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
∆VGS(th)/∆TJ
Gate Threshold Voltage Temp. Coefficient
ID = -250 µA, Referenced to 25 oC
-0.4
RDS(ON)
Static Drain-Source On-Resistance
VGS = -4.5 V, ID = -1.3 A
VGS = -2.5 V, I D = -1.1 A
On-State Drain Current
VGS = -4.5 V, VDS = -5 V
gFS
Forward Transconductance
VDS = -4.5 V, ID = -2 A
-1.5
V
mV /oC
3
TJ =125°C
ID(ON)
-0.9
0.122
0.2
0.18
0.32
0.19
0.27
-5
Ω
A
4
S
330
pF
80
pF
35
pF
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
(Note 2)
VDD = -5 V, ID = -0.5 A,
VGS = -4.5 V, RGEN = 6 Ω
VDS = -10 V, ID = - 2 A,
VGS = -4.5 V
7
15
ns
12
22
ns
16
26
ns
5
12
ns
3.6
5
nC
0.8
nC
0.7
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -0.42 A
(Note)
-0.7
-0.42
A
-1.2
V
Note:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
a. 250oC/W when mounted on
a 0.02 in2 pad of 2oz Cu.
b. 270oC/W when mounted on
a 0.001 in2 pad of 2oz Cu.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDN336P Rev.C
Typical Electrical Characteristics
2
8
R DS(on), NORMALIZED
VGS = -4.5V
-3.5V
-3.0V
6
-2.5V
4
-2.0V
2
DRAIN-SOURCE ON-RESISTANCE
- ID , DRAIN-SOURCE CURRENT (A)
10
0
0
1
2
3
4
1.8
1.4
-3.0V
-3.5V
1.2
-4.0V
-4.5V
1
0.8
5
VGS = -2.5 V
1.6
0
2
-VDS , DRAIN-SOURCE VOLTAGE (V)
4
6
8
10
- I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Figure 1. On-Region Characteristics.
Drain Current and Gate
0.5
I D = -1.3A
1.4
R DS(ON) , ON-RESISTANCE (OHM)
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
VGS = -4.5V
1.2
1
0.8
ID = -0.6A
0.4
0.3
0.2
TA= 125°C
0.1
25°C
0
0.6
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
0
2
150
6
8
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Figure 3. On-Resistance Variation
with Temperature.
10
VDS = -5V
TJ = -55°C
3
- IS , REVERSE DRAIN CURRENT (A)
4
- I D , DRAIN CURRENT (A)
4
- V GS , GATE TO SOURCE VOLTAGE (V)
25°C
125°C
2
1
0
0.5
1
1.5
2
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
VGS = 0V
TJ = 125°C
1
25°C
-55°C
0.1
0.01
0.001
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source
Current
and Temperature.
FDN336P Rev.C
Typical Electrical Characteristics (continued)
700
I D = -1.3A
400
VDS = -5V
4
CAPACITANCE (pF)
-VGS , GATE-SOURCE VOLTAGE (V)
5
-10V
-15V
3
2
1
Ciss
200
100
Coss
40
f = 1 MHz
VGS = 0 V
Crss
0
0
1
2
3
4
0.1
Q g , GATE CHARGE (nC)
2
5
10
20
50
N)
S(O
RD
3
1m
IT
LIM
10m
1
100
0.3
0.5
1
3
5
SINGLE PULSE
R θJA =270°C/W
TA = 25°C
40
ms
1s
10s
DC
V GS = -4.5V
SINGLE PULSE
R θJA = 270°C/W
T A = 25°C
0.01
0.2
s
s
POWER (W)
10
30
20
10
10
0
0.0001
30
0.001
0.01
0.1
1
10
100 300
SINGLE PULSE TIME (SEC)
-VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 9. Maximum Safe Operating Area.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
-ID , DRAIN CURRENT (A)
1
Figure 8. Capacitance Characteristics.
30
0.03
0.5
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
0.1
0.2
0.5
D = 0.5
0.2
0.1
0.05
0.02
0.01
R θJA (t) = r(t) * RθJA
R θJA = 270 °C/W
0.2
0.1
0.05
P(pk)
0.02
0.01
t1
Single Pulse
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001
t2
TJ - TA = P * RθJA (t)
0.005
0.001
0.01
0.1
1
10
100
300
t1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN336P Rev.C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quite Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The data sheet is printed for reference information only.