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FDPC5018SG
PowerTrench® Power Clip
30V Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel
This device includes two specialized N-Channel MOSFETs in a
Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A
dual package. The switch node has been internally connected to
Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A
enable easy placement and routing of synchronous buck
Q2: N-Channel
SyncFETTM (Q2) have been designed to provide optimal power
converters. The control MOSFET (Q1) and synchronous
Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A
efficiency.
Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A
Applications
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses
Computing
Communications
MOSFET Integration Enables Optimum Layout for
Lower Circuit Inductance and Reduced Switch
Node Ringing
General Purpose Point of Load
RoHS Compliant
PIN1
PAD10
V+(HSD)
PIN1
HSG
SW
GR
PAD9
GND(LSS)
V+
V+
Top
LSG
LSG HSG
GR
SW
SW
SW
V+
SW
SW
V+
SW
Bottom
Power Clip 5X6
Pin
Name
Description
1
HSG
High Side Gate
3,4,10
Pin
V+(HSD)
Name
High Side Drain
Description
Pin
2
GR
Gate Return
5,6,7
SW
Switching Node, Low Side Drain 9
8
Name
LSG
Description
Low Side Gate
GND(LSS) Low Side Source
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
Drain to Source Voltage
Parameter
Q1
30
Q2
30
Units
V
Bvdsst
VGS
Bvdsst (transient ) < 100nS
32.5
32.5
V
Gate to Source Voltage
±20
±12
V
56
109
Drain Current
-Continuous
TC = 25 °C (Note 5)
-Continuous
TC = 100 °C (Note 5)
-Continuous
TA = 25 °C
35
69
17Note1a
32Note1b
TA = 25 °C (Note 4)
227
704
(Note 3)
54
181
Power Dissipation for Single Operation
TC = 25 °C
23
29
Power Dissipation for Single Operation
TA = 25 °C
2.1Note1a
2.3Note1b
TA = 25 °C
1.0Note1c
1.1Note1d
ID
-Pulsed
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
5.6
4.3
RθJA
Thermal Resistance, Junction to Ambient
Note1a
60
Note1b
RθJA
Thermal Resistance, Junction to Ambient
130Note1c
©2015 Fairchild Semiconductor Corporation
FDPC5018SG Rev.1.1
1
55
°C/W
120Note1d
www.fairchildsemi.com
FDPC5018SG PowerTrench® Power Clip
September 2015
Device Marking
FDPC5018SG
Device
FDPC5018SG
Package
Power Clip 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Type
Min
30
30
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ID = 1 mA, VGS = 0 V
Q1
Q2
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
ID = 10 mA, referenced to 25 °C
Q1
Q2
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V
Q1
Q2
1
500
μA
μA
IGSS
Gate to Source Leakage Current,
Forward
VGS = 20 V, VDS= 0 V
VGS = 12 V, VDS= 0 V
Q1
Q2
100
100
nA
nA
3.0
3.0
V
V
15
19
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = VDS, ID = 1 mA
Q1
Q2
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
ID = 10 mA, referenced to 25 °C
Q1
Q2
-5
-3
VGS = 10V, ID = 17 A
VGS = 4.5 V, ID = 14 A
VGS = 10 V, ID = 17 A,TJ =125 °C
Q1
4.1
5.4
5.7
5.0
6.5
7.0
VGS = 10V, ID = 32 A
VGS = 4.5 V, ID = 28 A
VGS = 10 V, ID = 32 A ,TJ =125 °C
Q2
1.4
1.7
2.1
1.6
2.0
2.4
VDS = 5 V, ID = 17 A
VDS = 5 V, ID = 32 A
Q1
Q2
93
188
Q1
Q2
1224
4593
1715
6430
pF
Q1
Q2
397
1210
560
1695
pF
Q1
Q2
42
80
60
115
pF
0.5
0.8
1.5
2.4
Ω
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
1.0
1.0
1.7
1.6
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Q1:
VDS = 15 V, VGS = 0 V, f = 1 MHZ
Q2:
VDS = 15 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
0.1
0.1
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
©2015 Fairchild Semiconductor Corporation
FDPC5018SG Rev.1.1
Q1:
VDD = 15 V, ID = 17 A, RGEN = 6 Ω
Q2:
VDD = 15 V, ID = 32 A, RGEN = 6 Ω
VGS = 0 V to 10 V
Q1
V = 15 V, ID
VGS = 0 V to 4.5 V DD
= 17 A
Q2
VDD = 15 V, ID
= 32 A
2
Q1
Q2
8
14
16
25
ns
Q1
Q2
2
5
10
10
ns
Q1
Q2
18
38
33
61
ns
Q1
Q2
2
4
10
10
ns
Q1
Q2
17
62
24
87
nC
Q1
Q2
8
28
11
40
nC
Q1
Q2
3.1
11
nC
Q1
Q2
2.0
5.3
nC
www.fairchildsemi.com
FDPC5018SG PowerTrench® Power Clip
Package Marking and Ordering Information
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Q1
Q2
0.8
0.8
1.2
1.2
V
Q1
Q2
23
32
37
51
ns
Q1
Q2
8
40
16
64
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 17 A
VGS = 0 V, IS = 32 A
(Note 2)
(Note 2)
Q1
IF = 17 A, di/dt = 100 A/μs
Q2
IF = 32 A, di/dt = 240 A/μs
Notes:
1.RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material, RθCA is determined by the user's board design.
b. 55 °C/W when mounted on
a 1 in2 pad of 2 oz copper
a. 60 °C/W when mounted on
a 1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
c. 130 °C/W when mounted on a
minimum pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Q1 :EAS of 54 mJ is based on starting TJ = 25 oC; L = 3 mH, IAS = 6 A, VDD = 30 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS =20 A.
Q2: EAS of 181 mJ is based on starting TJ = 25 oC; L = 3 mH, IAS = 11 A, VDD = 30 V, VGS = 10 V.100% tested at L = 0.1 mH, IAS =36 A.
4. Pulsed Id refer to Fig.11 and Fig.24 SOA curve for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2015 Fairchild Semiconductor Corporation
FDPC5018SG Rev.1.1
3
www.fairchildsemi.com
FDPC5018SG PowerTrench® Power Clip
Electrical Characteristics TJ = 25 °C unless otherwise noted.
6.0
VGS = 10 V
VGS = 4.5 V
VGS = 6 V
ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
60
VGS = 3.5 V
45
30
VGS = 3 V
15
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0
0.2
0.4
0.6
0.8
4.5
3.0
VGS = 3.5 V
VGS = 4.5 V
1.5
VGS = 6 V
1.0
0
15
30
45
60
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
1.6
40
ID = 17 A
VGS = 10 V
1.5
rDS(on), DRAIN TO
1.4
1.3
1.2
1.1
1.0
0.9
0.8
-75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V
0.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
30
ID = 17 A
20
TJ = 125 oC
10
TJ = 25 oC
0
-50
-25
0
25
50
75
100 125 150
2
TJ, JUNCTION TEMPERATURE (oC)
3
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On-Resistance vs. Gate to
Source Voltage
60
IS, REVERSE DRAIN CURRENT (A)
60
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
45
VDS = 5 V
30
TJ = 150 oC
TJ = 25 oC
15
TJ = -55 oC
0
0
1
2
3
4
1
TJ = 150 oC
0.1
TJ = 25 oC
TJ = -55 oC
0.01
0.001
0.0
5
VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2015 Fairchild Semiconductor Corporation
FDPC5018SG Rev.1.1
VGS = 0 V
10
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
4
www.fairchildsemi.com
FDPC5018SG PowerTrench® Power Clip
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted.
3000
ID = 17 A
Ciss
1000
8
VDD = 10 V
6
VDD = 15 V
Coss
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 20 V
4
100
Crss
2
f = 1 MHz
VGS = 0 V
0
0
4
8
12
16
10
0.1
20
1
Figure 7. Gate Charge Characteristics
60
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
30
Figure 8. Capacitance vs. Drain
to Source Voltage
30
10
TJ = 25 oC
TJ = 125 oC
45
VGS = 10 V
30
VGS = 4.5 V
15
o
RθJC = 5.6 C/W
1
0.001
0.01
0.1
1
10
0
25
100
50
75
100
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
5000
P(PK), PEAK TRANSIENT POWER (W)
500
100
SINGLE PULSE
RθJC = 5.6 oC/W
TC = 25 oC
1000
10 μs
1
THIS AREA IS
LIMITED BY rDS(on)
100 μs
SINGLE PULSE
TJ = MAX RATED
RθJC = 5.6 oC/W
0.1
0.1
150
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
10
125
o
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
CURVE BENT TO
MEASURED DATA
TC = 25 oC
1
10
1 ms
10 ms
DC
80
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
©2015 Fairchild Semiconductor Corporation
FDPC5018SG Rev.1.1
100
5
www.fairchildsemi.com
FDPC5018SG PowerTrench® Power Clip
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
SINGLE PULSE
NOTES:
0.01
ZθJC(t) = r(t) x RθJC
RθJC = 5.6 oC/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
0.001
-5
10
-4
10
-3
-2
10
10
-1
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
©2015 Fairchild Semiconductor Corporation
FDPC5018SG Rev.1.1
6
www.fairchildsemi.com
FDPC5018SG PowerTrench® Power Clip
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted.
120
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
10
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
90
VGS = 10 V
VGS = 4.5 V
60
VGS = 3.5 V
VGS = 3 V
VGS = 2.5 V
30
0
0
0.3
0.6
0.9
1.2
8
6
4
VGS = 3 V
VGS = 3.5 V
2
VGS = 4.5 V VGS = 10 V
0
1.5
0
24
VDS, DRAIN TO SOURCE VOLTAGE (V)
72
96
120
Figure 15. Normalized on-Resistance vs. Drain
Current and Gate Voltage
12
ID = 32 A
VGS = 10 V
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
-75
SOURCE ON-RESISTANCE (mΩ)
1.8
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
48
ID, DRAIN CURRENT (A)
Figure 14. On- Region Characteristics
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
9
ID = 32 A
6
TJ = 125 oC
3
TJ = 25 oC
0
-50
-25
0
25
50
75
2
100 125 150
TJ, JUNCTION TEMPERATURE (oC)
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
96
VDS = 5 V
72
TJ = 25 oC
48
TJ = -55 oC
24
0
0
1
2
3
4
5
6
7
8
9
200
100
VGS = 0 V
10
1
TJ = 125 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
4
TJ = 25 oC
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode
Forward Voltage vs. Source Current
©2015 Fairchild Semiconductor Corporation
FDPC5018SG Rev.1.1
10
Figure 17. On-Resistance vs. Gate to
Source Voltage
120
TJ = 125 oC
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 16. Normalized On-Resistance
vs. Junction Temperature
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 2.5 V
7
1.2
www.fairchildsemi.com
FDPC5018SG PowerTrench® Power Clip
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted.
10000
ID = 32 A
Ciss
8
VDD = 10 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 15 V
6
VDD = 20 V
4
1000
Coss
100
Crss
2
f = 1 MHz
VGS = 0 V
10
0.1
0
0
14
28
42
56
70
30
120
ID, DRAIN CURRENT (A)
100
TJ = 25 oC
TJ = 100 oC
10
TJ = 125 oC
96
VGS = 10 V
72
VGS = 4.5 V
48
24
o
RθJC = 4.3 C/W
1
0.001
0.01
0.1
1
10
100
0
25
1000
50
75
100
125
150
o
tAV, TIME IN AVALANCHE (ms)
TC, CASE TEMPERATURE ( C)
Figure 22. Unclamped Inductive
Switching Capability
Figure 23. Maximum Continuous Drain
Current vs. Case Temperature
10000
P(PK), PEAK TRANSIENT POWER (W)
1000
ID, DRAIN CURRENT (A)
10
Figure 21. Capacitance vs. Drain
to Source Voltage
Figure 20. Gate Charge Characteristics
IAS, AVALANCHE CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
10 μs
100
SINGLE PULSE
RθJC = 4.3 oC/W
TC = 25 oC
1000
100 μs
10
1
THIS AREA IS
LIMITED BY rDS(on)
RθJC = 4.3 oC/W
o
TC = 25 C
0.1
0.1
1 ms
10 ms
SINGLE PULSE
TJ = MAX RATED
100 ms/DC
CURVE BENT TO
MEASURED DATA
1
10
100 200
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 25. Single Pulse Maximum
Power Dissipation
Figure 24. Forward Bias Safe
Operating Area
©2015 Fairchild Semiconductor Corporation
FDPC5018SG Rev.1.1
100
8
www.fairchildsemi.com
FDPC5018SG PowerTrench® Power Clip
Typical Characteristics (Q2 N-Channel) TJ = 25°C unless otherwise noted.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
0.01
ZθJC(t) = r(t) x RθJC
RθJC = 4.3 oC/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
-5
10
-4
10
-3
-2
10
10
-1
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 26. Junction-to-Case Transient Thermal Response Curve
©2015 Fairchild Semiconductor Corporation
FDPC5018SG Rev.1.1
9
www.fairchildsemi.com
FDPC5018SG PowerTrench® Power Clip
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted.
SyncFETTM Schottky Body Diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench® MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDPC5018SG.
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
-2
IDSS, REVERSE LEAKAGE CURRENT (A)
35
CURRENT (A)
28
21
di/dt = 240 A/μs
14
7
0
0
100
200
300
400
500
TIME (ns)
TJ = 125 oC
-3
10
TJ = 100 oC
-4
10
-5
10
TJ = 25 oC
-6
10
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
Figure 27. FDPC5018SG SyncFETTM Body
Diode Reverse Recovery Characteristic
©2015 Fairchild Semiconductor Corporation
FDPC5018SG Rev.1.1
10
Figure 28. SyncFETTM Body Diode Reverse
Leakage vs. Drain-Source Voltage
10
www.fairchildsemi.com
FDPC5018SG PowerTrench® Power Clip
Typical Characteristics (continued)
5.00
4.56
4.20
5.10
4.90
0.10 C
2X
PKG
CL
4
A
1.27
4
B
2
3
1
3.30
1
2.48
2.08
1.01
6.60
PKG
0.00
6.10
5.90
CL
0.40
2.65
0.83
1.43
1.98
2.48
0.82
3.30
6
5
2X
7
8
0.75
TOP VIEW
1.53
1.01
SEE
DETAIL A
1.08
1.48
1.53
2.29
8
0.10 C
0.00
PIN #1
INDICATOR
5
RECOMMENDED LAND PATTERN
SIDE VIEW
0.10
0.05
3.15±.05
C A B
C
3.81
1.27
0.51
5
7
6
8
1.57±.05
0.65±.05
NOTES: UNLESS OTHERWISE SPECIFIED
0.65±.05
2.46±.05
1.37±.05
0.53±.05
0.91±.05
0.49±.05
0.48±.05
4
3
2
1
0.51±.05
3.90±.05
4.22±.05
5.00±.05
BOTTOM VIEW
A) DOES NOT FULLY CONFORM TO
JEDEC REGISTRATION, MO-229,
DATED 11/2001.
B) ALL DIMENSIONS ARE IN
MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE
BURRS OR MOLD FLASH. MOLD
FLASH OR BURRS DOES NOT
EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING
PER ASME Y14.5M-1994.
E) DRAWING FILE NAME: PQFN08KREV2
0.10 C
0.08 C
0.80
0.70
0.30
0.20
(SCALE: 2X)
0.05
0.00
C
SEATING
PLANE
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