FFSB20120A-F085

Silicon Carbide Schottky Diode 1200 V, 20 A FFSB20120A-F085 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com 1.,3. Cathode 2. Anode Schottky Diode Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 200 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery AEC−Q101 qualified 3 1 2 D2PAK2 (TO−263−2L) CASE 418BK MARKING DIAGRAM Applications • Automotive HEV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters $Y&Z&3&K FFSB 20120A $Y &Z &3 &K FFSB20120A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 August, 2020 − Rev. 1 1 Publication Order Number: FFSB20120A−F085/D FFSB20120A−F085 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Ratings Unit 1200 V 200 mJ A VRRM Peak Repetitive Reverse Voltage EAS Single Pulse Avalanche Energy IF Continuous Rectified Forward Current @ TC < 157°C 20 Continuous Rectified Forward Current @ TC < 135°C 32 IF, Max (Note 1) Non−Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 1190 TC = 150°C, 10 ms 990 A IF, SM Non−Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 135 A IF, RM Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 74 A Ptot Power Dissipation TC = 25°C 333 W TC = 150°C 55 W −55 to +175 °C TJ, TSTG Operating and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol RqJC Parameter Thermal Resistance, Junction to Case, Max Ratings Unit 0.45 °C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Shipping† FFSB20120A−F085 FFSB20120A D2PAK 800 Units/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR Parameter Forward Voltage Reverse Current Test Conditions Min Typ. Max. Unit IF = 20 A, TC = 25°C − 1.45 1.75 V IF = 20 A, TC = 125°C − 1.7 2 IF = 20 A, TC = 175°C − 2 2.4 VR = 1200 V, TC = 25°C − − 200 VR = 1200 V, TC = 125°C − − 300 VR = 1200 V, TC = 175°C − − 400 mA QC Total Capacitive Charge V = 800 V − 120 − nC C Total Capacitance VR = 1 V, f = 100 kHz − 1220 − pF VR = 400 V, f = 100 kHz − 111 − VR = 800 V, f = 100 kHz − 88 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. EAS of 200 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 29 A, V = 50 V. www.onsemi.com 2 FFSB20120A−F085 TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) 101 TJ = −55°C TJ = 25°C TJ = 75°C 16 IR, REVERSE CURRENT (mA) IF, FORWARD CURRENT (A) 20 12 TJ = 125°C TJ = 175°C 8 4 0 0.0 0.5 1.0 1.5 2.0 VF, FORWARD VOLTAGE (V) 2.5 100 TJ = 175°C 10−1 TJ = 125°C TJ = 75°C 10−2 TJ = 25°C 10−3 200 3.0 Figure 1. Forward Characteristics 200 D = 0.2 D = 0.3 150 D = 0.5 100 50 D=1 D = 0.7 50 75 125 100 150 300 250 200 150 100 50 0 25 175 TC, CASE TEMPERATURE (5C) 50 75 100 125 150 175 TC, CASE TEMPERATURE (5C) Figure 3. Current Derating Figure 4. Power Derating 150 5000 125 CAPACITIANCE (pF) QC, CAPACITIVE CHARGE (nC) 1200 350 D = 0.1 0 25 400 600 800 1000 VR, REVERSE VOLTAGE (V) Figure 2. Reverse Characteristics PTOT, POWER DISSIPATION (W) IP, PEAK FORWARD CURRENT (A) 250 TJ = −55°C 100 75 50 25 0 1000 100 0 200 400 600 800 50 0.1 1000 VR, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage 1 10 100 VR, REVERSE VOLTAGE (V) 1000 Figure 6. Capacitive Charge vs. Reverse Voltage www.onsemi.com 3 FFSB20120A−F085 TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued) EC, CAPACITIVE ENERGY (mJ) 50 40 30 20 10 0 0 200 400 800 600 1000 VR, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE − DESCENDING ORDER PDM 0.1 0.2 0.5 0.1 0.0 1 0.02 0.01 t1 t2 0.05 NOTES: ZqJC (t) = r(t) × RqJC RqJC = 0.45°C/W PEAK TJ = PDM × ZqJC (t) + TC Duty cycle, D = t1/t2 0.001 SINGLE PULSE 0.0001 10−6 10−5 10−4 10−3 10−2 10−1 1 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction−to−Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK2 (TO−263−2L) CASE 418BK ISSUE O DATE 02 AUG 2018 GENERIC MARKING DIAGRAM* XXXXXXXXG AYWW XXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON93788G D2PAK2 (TO−263−2L) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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