FFSP1265A

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FFSP1265A Silicon Carbide Schottky Diode 650 V, 12 A Features Description o • Max Junction Temperature 175 C Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. • Avalanche Rated 72 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits TO-220-2L 1 2 1. Cathode 2. Anode 1. Cathode 2. Anode Absolute Maximum Ratings TC = 25 °C unless otherwise noted. Symbol VRRM Peak Repetitive Reverse Voltage EAS Single Pulse Avalanche Energy IF Parameter FFSP1265A 650 Unit V 72 mJ Continuous Rectified Forward Current @ TC < 147°C 12 A Continuous Rectified Forward Current @ TC < 135°C 15 A (Note 1) IF, Max Non-Repetitive Peak Forward Surge Current TC = 25 °C, 10 μs 940 A TC = 150 °C, 10 μs 890 A IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 70 A IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 43 A TC = 25 °C 115 W Ptot Power Dissipation TJ, TSTG Operating and Storage Temperature Range TC = 150 °C 19 W -55 to +175 °C Thermal Characteristic Symbol RθJC Parameter Thermal Resistance, Junction to Case, Max Semiconductor Components Industries, LLC, 2017 Sep, 2017, Rev.1.0 Rating Unit 1.3 °C/W Publication Order Number: FFSP1265A/D 1 FFSP1265A — Silicon Carbide Schottky Diode www.onsemi.com Part Number FFSP1265A Top Mark FFSP1265A Package TO-220-2L Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25 °C unless otherwise noted. Symbol Parameter VF Forward Voltage IR Reverse Current QC Total Capacitive Charge C Total Capacitance Test Conditions IF = 12 A, TC = 25 oC IF = 12 A, TC = 125 oC IF = 12 A, TC = 175 oC VR = 650 V, TC = 25 oC VR = 650 V, TC = 125 oC VR = 650 V, TC = 175 oC V = 400 V VR = 1 V, f = 100 kHz VR = 200 V, f = 100 kHz VR = 400 V, f = 100 kHz Min. Typ. Max. - 1.5 1.6 1.72 40 665 74 54 1.75 2 2.4 200 400 600 - Unit V μA nC pF Notes: 1: EAS of 72 mJ is based on starting TJ = 25 °C, L = 0.5 mH, IAS = 17A, V = 50 V. Typical Characteristics TJ = 25 °C unless otherwise noted. Figure 1. Forward Characteristics Figure 2. Reverse Characteristics -4 10 10 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 12 8 6 4 T J = 175 oC T J = 25 oC TJ = 125 oC T J = 75 oC 2 T J = -55 oC -5 10 -6 10 TJ = 175 oC -7 10 TJ = 75 oC -8 10 0.5 1.0 1.5 10 2.0 200 300 400 500 600 650 VR, REVERSE VOLTAGE (V) VF , FORWARD VOLTAGE (V) Figure 3. Current Derating Figure 4. Power Derating 150 120 D = 0.1 PTOT, POWER DISSIPATION (W) IF , PEAK FORWARD CURRENT (A) TJ = -55 oC TJ = 25 oC -9 0 0.0 100 D = 0.2 D = 0.3 50 TJ = 125 oC D = 0.5 D = 0.7 0 25 D= 1 50 75 100 125 150 100 80 60 40 20 0 25 175 o 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) TC, CASE TEMPERATURE ( C) www.onsemi.com 2 175 FFSP1265A — Silicon Carbide Schottky Diode Package Marking and Ordering Information Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage 1000 50 CAPACITANCE (pF) QC, CAPACITIVE CHARGE (nC) 60 40 30 20 10 0 0 100 200 300 400 500 100 10 0.1 600650 1 10 100 650 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 7. Capacitance Stored Energy EC , CAPACITIVE ENERGY (μ J) 12 10 8 6 4 2 0 0 100 200 300 400 500 600650 VR, REVERSE VOLTAGE (V) Figure 8. Junction-to-Case Transient Thermal Response Curve NORMALIZED THERMAL IMPEDANCE, ZθJ C 2 1 DUTY CIRCLE-DESCENDING ORDER D=0.5 -1 10 0.2 10-2 0.05 0.01 PDM 0.1 t1 0.02 t2 NOTES: 10-3 ZθJC(t) = r(t) x RθJC RθJC = 1.3 oC/W Peak TJ = PDM x ZθJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 10-4 -6 10 -5 10 -4 -3 10 10 -2 10 t, RECTANGULAR PULSE DURATION (sec) www.onsemi.com 3 -1 10 1 FFSP1265A — Silicon Carbide Schottky Diode Typical Characteristics TJ = 25 °C unless otherwise noted. Figure 9. Unclamped Inductive Switching Test Circuit & Waveform L = 0.5mH www.onsemi.com 4 FFSP1265A — Silicon Carbide Schottky Diode Test Circuit and Waveforms FFSP1265A — Silicon Carbide Schottky Diode Mechanical Dimensions Figure10. TO-220 2L - TO-220, MOLDED, 2LD ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 5