FGB20N60SF

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGB20N60SF 600 V, 20 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. • Low Saturation Voltage: VCE(sat) =2.2 V @ IC = 20 A • High Input Impedance • Fast Switching : EOFF = 8 uJ/A • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC C COLLECTOR (FLANGE) G C E G D2-PAK E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD Ratings Unit Collector to Emitter Voltage Description 600 V Gate to Emitter Voltage ±20 Transient Gate-to-Emitter Voltage ±30 V Collector Current @ TC = 25oC 40 A Collector Current @ TC = 100oC 20 A 25oC 60 A o W Pulsed Collector Current @ TC = Maximum Power Dissipation @ TC = 25 C 208 Maximum Power Dissipation @ TC = 100oC 83 W TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJC Thermal Resistance, Junction to Case - 0.6 oC/W RθJA Thermal Resistance, Junction to Ambient (PCB Mount)(2) - 40 o C/W Notes: 2: Mounted on 1” square PCB(FR4 or G-10 material) ©2010 Fairchild Semiconductor Corporation FGB20N60SF Rev. 1.5 1 www.fairchildsemi.com FGB20N60SF — 600 V, 20 A Field Stop IGBT March 2015 Part Number FGB20N60SF Top Mark Package Packing Method FGB20N60SF 2 D -PAK Parameter Tape Width Quantity 13” Dia N/A 800 Reel Electrical Characteristics of the IGBT Symbol Reel Size TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA ΔBVCES / ΔTJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 μA - 0.6 ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 μA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 250 μA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.0 5.0 6.5 V IC = 20 A, VGE = 15 V - 2.2 2.8 V IC = 20 A, VGE = 15 V, TC = 125oC - 2.4 - V - 940 - pF - 110 - pF - 40 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time - 13 - ns tr Rise Time - 16 - ns td(off) Turn-Off Delay Time - 90 - ns tf Fall Time - 24 48 ns Eon Turn-On Switching Loss - 0.37 - mJ Eoff Turn-Off Switching Loss - 0.16 - mJ Ets Total Switching Loss - 0.53 - mJ VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25oC td(on) Turn-On Delay Time - 12 - ns tr Rise Time - 16 - ns td(off) Turn-Off Delay Time - 95 - ns tf Fall Time - 28 - ns Eon Turn-On Switching Loss - 0.4 - mJ Eoff Turn-Off Switching Loss - 0.28 - mJ VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125oC Ets Total Switching Loss - 0.69 - mJ Qg Total Gate Charge - 65 - nC Qge Gate to Emitter Charge Qgc Gate to Collector Charge ©2010 Fairchild Semiconductor Corporation FGB20N60SF Rev. 1.5 VCE = 400 V, IC = 20 A, VGE = 15 V 2 - 7 - nC - 33 - nC www.fairchildsemi.com FGB20N60SF — 600 V, 20 A Field Stop IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 60 o TC = 25 C 20V Collector Current, IC [A] 15V 10V 20 VGE = 8V 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 6.0 Figure 4. Transfer Characteristics 60 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C o TC = 125 C 40 20 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] 40A 20A 2 IC = 10A 1 25 20 0 Common Emitter VGE = 15V 3 o TC = 125 C 40 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4 TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 10V VGE = 8V 20 60 Collector-Emitter Voltage, VCE [V] 12V 40 6.0 Figure 3. Typical Saturation Voltage Characteristics 0 20V 15V 40 0 0.0 o TC = 125 C 12V Collector Current, IC [A] 60 Figure 2. Typical Output Characteristics Common Emitter o TC = -40 C 16 12 8 40A 4 20A IC = 10A 0 50 75 100 125 o Collector-Emitter Case Temperature, TC [ C] ©2010 Fairchild Semiconductor Corporation FGB20N60SF Rev. 1.5 3 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGB20N60SF — 600 V, 20 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter Common Emitter o TC = 25 C o Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 Figure 8. Saturation Voltage vs. VGE 16 12 8 40A 4 20A IC = 10A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] TC = 125 C 16 12 8 20A IC = 10A 0 20 Figure 9. Capacitance Characteristics 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 15 2500 Common Emitter Common Emitter VGE = 0V, f = 1MHz Gate-Emitter Voltage, VGE [V] o o 2000 Capacitance [pF] 40A 4 TC = 25 C Cies 1500 1000 Coes 500 Cres 0 0.1 1 10 Collector-Emitter Voltage, VCE [V] TC = 25 C 12 Figure 11. SOA Characteristics 200V 9 6 3 0 30 300V VCC = 100V 0 20 40 60 Gate Charge, Qg [nC] 80 Figure 12. Turn-on Characteristics vs. Gate Resistance 100 100 100μs 10 Switching Time [ns] Collector Current, Ic [A] 10μs 1ms 10 ms DC 1 *Notes: o 1. TC = 25 C tr td(on) 10 o TC = 25 C o 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 Collector-Emitter Voltage, VCE [V] ©2010 Fairchild Semiconductor Corporation FGB20N60SF Rev. 1.5 Common Emitter VCC = 400V, VGE = 15V IC = 20A o TC = 125 C 5 1000 4 0 10 20 30 40 Gate Resistance, RG [Ω] 50 60 www.fairchildsemi.com FGB20N60SF — 600 V, 20 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 200 1000 Common Emitter VCC = 400V, VGE = 15V IC = 20A Common Emitter VGE = 15V, RG = 10Ω 100 o TC = 25 C o TC = 25 C td(off) o TC = 125 C 100 tf 10 0 10 20 30 40 TC = 125 C Switching Time [ns] Switching Time [ns] o 50 tr td(on) 10 3 60 0 10 Figure 15. Turn-off Characteristics vs. Collector Current 40 Figure 16. Switching Loss vs. Gate Resistance Common Emitter VCC = 400V, VGE = 15V Common Emitter VGE = 15V, RG = 10Ω o IC = 20A TC = 25 C o o Switching Loss [mJ] TC = 125 C td(off) 100 TC = 25 C 1 o TC = 125 C Eon Eoff tf 10 30 3 300 Switching Time [ns] 20 Collector Current, IC [A] Gate Resistance, RG [Ω] 0 10 20 30 0.1 40 0 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current 10 20 30 40 Gate Resistance, RG [Ω] 50 60 Figure 18. Turn off Switching SOA Characteristics 80 10 Common Emitter VGE = 15V, RG = 10Ω o o TC = 125 C 1 Collector Current, IC [A] Switching Loss [mJ] TC = 25 C Eon Eoff 0.1 10 Safe Operating Area o 0.02 0 10 20 30 1 40 FGB20N60SF Rev. 1.5 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Collector Current, IC [A] ©2010 Fairchild Semiconductor Corporation VGE = 15V, TC = 125 C 5 www.fairchildsemi.com FGB20N60SF — 600 V, 20 A Field Stop IGBT Typical Performance Characteristics FGB20N60SF — 600 V, 20 A Field Stop IGBT Typical Performance Characteristics Figure 19.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 single pulse 0.01 -5 10 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC -4 10 -3 -2 10 10 -1 10 0 10 Rectangular Pulse Duration [sec] ©2010 Fairchild Semiconductor Corporation FGB20N60SF Rev. 1.5 6 www.fairchildsemi.com 10.67 9.65 10.67 -A1.68 1.00 4 4 9.45 9.65 8.38 10.00 1.78 MAX 2 3 1 1.78 1.14 0.99 0.51 (2.12) 2 0.25 MAX PLASTIC BODY STUB 3.80 3 1 1.05 0.25 M 5.08 B AM LAND PATTERN RECOMMENDATION UNLESS NOTED, ALL DIMS TYPICAL 5.08 FRONT VIEW - DIODE PRODUCTS VERSION ALTERNATIVE SUPPLIER DETAIL 6.22 MIN 4 -B- 4.83 4.06 1.65 1.14 4 6.86 MIN 15.88 14.61 SEE DETAIL A 2 2 3 1 3 1 BACK VIEW - DIODE PRODUCTS VERSION ALTERNATIVE SUPPLIER DETAIL GAGE PLANE 0.74 0.33 0.25 2.79 1.78 0.25 MAX (5.38) SEATING PLANE SCALE: 2X 0.10 NOTES: UNLESS OTHERWISE SPECIFIED A) ALL DIMENSIONS ARE IN MILLIMETERS. B) REFERENCE JEDEC, TO-263, VARIATION AB. C) DIMENSIONING AND TOLERANCING PER DIMENSIONING AND TOLERANCING PER ASME Y14.5 - 2009. D) LOCATION OF THE PIN HOLE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE). E) LANDPATTERN RECOMMENDATION PER IPC TO254P1524X482-3N B F) FILENAME: TO263A02REV8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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