FGH40N120ANTU

IGBT - NPT 1200 V, 40 A FGH40N120AN Description Employing NPT technology, ON Semiconductor’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). www.onsemi.com C Features • • • • High Speed Switching Low Saturation Voltage: VCE(sat) = 2.6 V @ IC = 40 A High Input Impedance This Device is Pb−Free and is RoHS Compliant G E E Applications • Induction Heating, UPC, AC & DC Motor Controls and General C G Purpose Inverters COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH40N120 AN $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH40N120AN = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2006 February, 2020 − Rev. 1 1 Publication Order Number: FGH40N120AN/D FGH40N120AN ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol FGH40N120AN Unit Collector to Emitter Voltage VCES 1200 V Gate to Emitter Voltage VGES ±25 V IC 64 A 40 A ICM (Note 1) 160 A PD 417 W 167 W SCWT 10 s TJ −55 to +150 °C TSTG −55 to +150 °C TL 300 °C Parameter Collector Current TC = 25°C Collector Current TC = 100°C Pulsed Collector Current Maximum Power Dissipation TC = 25°C Maximum Power Dissipation TC = 100°C Short Circuit Withstand Time, VCE = 600 V, VGE = 15 V, TC = 125°C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction to Case Symbol Typ Max Unit RJC(IGBT) − 0.3 °C/W RJA − 40 °C/W Thermal Resistance, Junction to Ambient PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FGH40N120AN FGH40N120AN TO−247 − − 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 1 mA 1200 − − V Temperature Coefficient of Breakdown Voltage BVCES/TJ VGE = 0 V, IC = 1 mA − 0.6 − V/°C Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 1 mA G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±250 nA G−E Threshold Voltage VGE(th) IC = 250 A, VCE = VGE 3.5 5.5 7.5 V Collector to Emitter Saturation Voltage VCE(sat) IC = 40 A, VGE = 15 V − 2.6 3.2 V IC = 40 A, VGE = 15 V, TC = 125°C − 2.9 − V IC = 64 A, VGE = 15 V − 3.15 − V ON CHARACTERISTICs www.onsemi.com 2 FGH40N120AN ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 3200 − pF DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Input Capacitance Cies Output Capacitance Coes − 370 − pF Reverse Transfer Capacitance Cres − 125 − pF − 15 − ns − 20 − ns td(off) − 110 − ns SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr VCC = 600 V, IC = 40 A, RG = 5  VGE = 15 V, Inductive Load, TC = 25°C tf − 40 80 ns Turn−On Switching Loss Eon − 2.3 3.45 mJ Turn−Off Switching Loss Eoff − 1.1 1.65 mJ Total Switching Loss Ets 3.4 5.1 mJ Turn−On Delay Time td(on) − 20 − ns − 25 − ns td(off) − 120 − ns tf − 45 − ns Turn−On Switching Loss Eon − 2.5 − mJ Turn−Off Switching Loss Eoff − 1.8 − mJ Total Switching Loss Ets − 4.3 − mJ Total Gate Charge Qg − 220 − nC Gate to Emitter Charge Qge − 25 − nC Gate to Collector Charge Qgc − 130 − nC Rise Time Turn−Off Delay Time Fall Time tr VCC = 600 V, IC = 40 A, RG = 5  VGE = 15 V, Inductive Load, TC = 125°C VCE = 600 V, IC = 40 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH40N120AN TYPICAL PERFORMANCE CHARACTERISTICS 250 160 20 V 17 V TC = 25°C 15 V 200 Collector Current, IC [A] Collector Current, IC [A] 300 12 V 150 100 VGE = 10 V 50 0 0 2 6 4 8 120 80 40 0 10 Common Emitter VGE = 15 V TC = 25°C TC = 125°C 2 0 Collector−Emitter Voltage, VCE [V] Figure 2. Typical Saturation Voltage Characteristics Figure 1. Typical Output Characteristics 70 Common Emitter VGE = 15 V 80 A 3 40 A 1 IC = 20 A 25 75 50 VCC = 600 V Load Current: Peak of Square Wave 56 4 Load Current, [A] Collector−Emitter Voltage, VCE [V] 5 2 100 42 28 14 Duty Cycle: 50% TC = 100°C Power Dissipation = 100 W 0 0.1 125 1 Case Temperature, TC [°C] Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] 12 8 80 A 4 0 40 A IC = 20 A 0 4 8 12 16 1000 20 Common Emitter TC = 25°C 16 10 100 Frequency [kHz] Figure 4. Load Current vs. Frequency Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 20 6 4 Collector−Emitter Voltage, VCE [V] 20 Common Emitter TC = 125°C 16 12 8 80 A 4 0 40 A IC = 20 A 0 4 8 12 16 Gate−Emitter Voltage, VGE [V] Gate−Emitter Voltage, VGE [V] Figure 6. Saturation Voltage vs VGE Figure 5. Saturation Voltage vs. VGE www.onsemi.com 4 20 FGH40N120AN TYPICAL PERFORMANCE CHARACTERISTICS (continued) 6000 Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C Ciss 4000 100 Switching Time [ns] Capacitance [pF] 5000 3000 2000 Coss 1000 0 tr td(on) Crss 1 10 0 10 10 Collector−Emitter Voltage, VCE [V] 1000 Switching Loss [mJ] td(off) Common Emitter VCC = 600 V, VGE = ±15 V IC = 40 A TC = 25°C TC = 125°C 100 tf 20 30 40 50 Gate Resistance, RG [] 60 70 Figure 8. Turn−On Characteristic vs. Gate Resistance Figure 7. Capacitance Characteristics Switching Time [ns] Common Emitter VCC = 600 V, VGE = ±15 V IC = 40 A TC = 25°C TC = 125°C Common Emitter VCC = 600 V, VGE = ±15 V IC = 40 A TC = 25°C TC = 125°C 10 Eon Eoff 1 10 0 20 10 30 40 50 60 1 70 20 10 Gate Resistance, RG [] 40 50 60 70 Figure 9. Turn−Off Characteristics vs. Gate Resistance Figure 10. Switching Loss vs. Gate Resistance Common Emitter VGE = ±15 V, RG = 5  TC = 25°C TC = 125°C Common Emitter VGE = ±15 V, RG = 5  TC = 25°C TC = 125°C tr Switching Time [ns] Switching Time [ns] 100 30 Gate Resistance, RG [] td(on) 10 20 30 40 50 60 70 td(off) 100 tf 20 80 Collector Current, IC [A] 30 40 50 60 70 Collector Current, IC [A] 80 Figure 12. Turn−Off Characteristics vs. Collector Current Figure 11. Turn−On Characteristics vs. Collector Current www.onsemi.com 5 FGH40N120AN 16 Common Emitter VGE = ±15 V, RG = 5  TC = 25°C TC = 125°C 10 Gate−Emitter Voltage, VGE [V] Switching Loss [mJ] TYPICAL PERFORMANCE CHARACTERISTICS (continued) Eon Eoff 1 0.1 20 30 40 50 60 70 Collector Current, IC [A] Collector Current, IC [A] Collector Current, IC [A] 10 ms DC Operation *Notes: 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 1 100 10 6 4 2 0 50 100 150 200 Gate Charge, Qg [nC] 250 10 1 1000 2000 Safe Operating Area VGE = 15 V, TC = 125°C 1 10 100 Figure 16. Turn−Off SOA Figure 15. SOA Characteristics 1 0.1 0.5 0.2 0.1 0.05 0.01 0.02 0.01 Single Pulse 1E−3 1E−5 1E−4 1000 Collector−Emitter Voltage, VCE [A] Collector−Emitter Voltage, VCE [V] Thermal Response [Zjc] 0.01 1 ms IC MAX(Continuous) 0.1 400 V 8 100 100 s 1 10 10 s IC MAX(Pulse) 100 10 600 V VCC = 200 V Figure 14. Gate Charge Characteristics Figure 13. Switching Loss vs. Collector Current 500 12 0 80 Common Emitter RL = 15  TC = 25°C 14 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC 1E−3 0.01 0.1 1 Rectangular Pulse Duration [sec] Figure 17. Transient Thermal Impedance of IGBT www.onsemi.com 6 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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