FGH40T120SQDNL4

IGBT - Ultra Field Stop FGH40T120SQDNL4 This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com 40 A, 1200 V VCEsat = 1.7 V Eoff = 1.1 mJ Features • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching These are Pb−Free Devices C Typical Applications • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Welding G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C ICM IF A 160 40 C 160 A A 160 40 Diode pulsed current, Tpulse limited by TJmax IFM 160 A Gate−emitter voltage Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) VGE ±20 ±30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C November, 2019 − Rev. 2 TO−247−4L CASE 340CJ EG MARKING DIAGRAM FGH40T120 SQDNL4 W 454 227 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2017 E 1 ORDERING INFORMATION Device Package Shipping FGH40T120SQDNL4 TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: FGH40T120SQDNL4/D FGH40T120SQDNL4 THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.33 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.61 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 1250* − − V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175°C VCEsat − − 1.78 2.3 1.95 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − 0.6 0.4 − mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 5000 − pF VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 140 − Cres − 80 − * Guaranteed by design. Input capacitance Output capacitance Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 40 A, VGE = 15 V Gate to collector charge Qg − 221 − Qge − 52 − Qgc − 100 − td(on) − 46 − tr − 33 − td(off) − 220 − nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 to 15V tf − 56 − Eon − 1.4 − Eoff − 1.1 − Total switching loss Ets − 2.5 − Turn−on delay time td(on) − 47 − tr − 33 − td(off) − 240 − tf − 132 − Turn−on switching loss Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 175°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 to 15 V ns mJ ns Eon − 2.7 − Turn−off switching loss Eoff − 1.8 − Total switching loss Ets − 4.5 − VF − − 3.4 3.1 3.8 − V trr − 166 − ns mc mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A, TJ = 175°C TJ = 25°C IF = 40 A, VR = 400 V diF/dt = 500 A/ms TJ = 125°C IF = 40 A, VR = 400 V diF/dt = 500 A/ms Qrr − 0.78 − Irrm − 9.0 − A trr − 390 − ns Qrr − 4.0 − mc Irrm − 20 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FGH40T120SQDNL4 TYPICAL CHARACTERISTICS 11 V 120 100 80 10 V 60 40 9V 20 7V 0 160 1 2 3 4 5 6 10 V 60 40 9V 20 7 V and 8 V 1 2 3 4 5 6 7 8V 20 7V 0 1 2 3 4 5 6 7 120 11 V TJ = 175°C 100 10 V 80 60 9V 40 8V 20 7V 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Output Characteristics 140 TJ = 25°C 120 100 TJ = 175°C 80 60 40 20 2 4 6 8 10 12 14 8 3.5 3.0 IC = 75 A 2.5 IC = 40 A 2.0 IC = 20 A 1.5 1.0 −75 −50 −25 0 25 50 75 100 125 150 175 200 VGE, GATE−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Transfer Characteristics Figure 6. VCE(sat) vs. TJ www.onsemi.com 3 8 VGE = 20 V − 13 V 140 0 8 160 IC, COLLECTOR CURRENT (A) 9V 40 160 TJ = −55°C 80 0 60 Figure 2. Output Characteristics 100 0 10 V 80 Figure 1. Output Characteristics 11 V 0 11 V TJ = 150°C 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) 120 0 120 0 8 7 VGE = 20 V − 13 V 140 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 V − 13 V 140 8V IC, COLLECTOR CURRENT (A) 0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 140 160 VGE = 20 V − 13 V TJ = 25°C VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 160 FGH40T120SQDNL4 TYPICAL CHARACTERISTICS 100 Cies IF, FORWARD CURRENT (A) CAPACITANCE (pF) 10,000 TJ = 25°C 1000 Coes 100 Cres 90 80 70 60 50 40 30 TJ = 175°C 20 10 10 0 10 20 30 40 50 60 70 80 90 0 100 12 10 8 6 VCE = 600 V VGE = 15 V IC = 40 A 4 2 0 50 100 150 200 2.5 3.0 3.5 4.0 Eoff 1.3 0.8 0 20 40 60 80 100 120 140 160 180 200 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature SWITCHING LOSS (mJ) 100 tf tr td(on) VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 20 Eon QG, GATE CHARGE (nC) td(off) 40 60 80 VCE = 600 V VGE = 15 V TJ = 175°C Rg = 10 W 5 4 Eon Eoff 3 2 1 0 100 120 140 160 180 200 10 20 30 40 50 60 70 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 11. Switching Time vs. Temperature Figure 12. Switching Loss vs. IC www.onsemi.com 4 4.5 1.8 6 0 2.0 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 2.3 0.3 250 1000 1 1.5 Figure 8. Diode Forward Characteristics 2.8 10 1.0 Figure 7. Typical Capacitance 14 0 0.5 VF, FORWARD VOLTAGE (V) SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) 16 SWITCHING TIME (ms) TJ = 25°C 80 90 FGH40T120SQDNL4 TYPICAL CHARACTERISTICS 10 1000 VCE = 600 V VGE = 15 V TJ = 175°C IC = 40 A td(off) tf 100 tr td(on) 10 1 VCE = 600 V VGE = 15 V TJ = 175°C Rg = 10 W 10 20 8 SWITCHING LOSS (mJ) SWITCHING TIME (ns) 9 7 6 5 4 3 Eoff 2 1 30 40 50 60 70 80 0 90 0 40 50 60 Figure 14. Switching Loss vs. RG 70 4.0 SWITCHING LOSS (mJ) td(off) tf tr VGE = 15 V TJ = 175°C IC = 40 A Rg = 10 W 100 td(on) VCE = 600 V VGE = 15 V TJ = 175°C IC = 40 A 0 10 20 30 40 50 60 Eoff 2.0 1.5 1.0 0.5 0 70 350 400 450 500 550 600 650 700 750 800 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. VCE 1000 VGE = 15 V TJ = 175°C IC = 40 A Rg = 10 W td(off) tr td(on) 350 400 Eon 2.5 RG, GATE RESISTOR (W) tf 100 3.0 IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 30 Figure 13. Switching Time vs. IC 1000 SWITCHING TIME (ns) 20 RG, GATE RESISTOR (W) 3.5 10 10 IC, COLLECTOR CURRENT (A) 1000 10 Eon 450 500 550 600 650 700 100 dc operation 10 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 750 800 50 ms 100 ms 1 10 1 ms 100 1K VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Switching Time vs. VCE Figure 18. Safe Operating Area www.onsemi.com 5 10K FGH40T120SQDNL4 TYPICAL CHARACTERISTICS 350 10 VGE = 15 V, TC = 175°C 1 10 100 1K 10K 250 TJ = 175°C, IF = 40 A 200 150 100 TJ = 25°C, IF = 40 A 50 0 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt 3.5 TJ = 175°C, IF = 40 A 3.0 2.5 2.0 1.5 TJ = 25°C, IF = 40 A 1.0 0.5 0 VR = 400 V 300 VCE, COLLECTOR−EMITTER VOLTAGE (V) Irm, REVERSE RECOVERY CURRENT (A) 1 Qrr, REVERSE RECOVERY CHARGE (mC) trr, REVERSE RECOVERY TIME (ns) 100 VR = 400 V 100 300 500 700 900 1100 VR = 400 V 40 TJ = 175°C, IF = 40 A 30 20 TJ = 25°C, IF = 40 A 10 0 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 21. Qrr vs. diF/dt Figure 22. Irm vs. diF/dt 4.5 4.0 IC = 75 A 3.5 IC = 40 A 3.0 2.5 IC = 20 A 2.0 1.5 1.0 −75 −50 −25 0 25 75 100 125 150 175 200 50 TJ, JUNCTION TEMPERATURE (°C) Figure 23. VF vs. TJ www.onsemi.com 6 1100 50 diF/dt, DIODE CURRENT SLOPE (A/ms) VF, FORWARD VOLTAGE (V) IC, COLLECTOR CURRENT (A) 1000 1100 FGH40T120SQDNL4 TYPICAL CHARACTERISTICS 180 160 TC = 110°C 140 TC = 80°C Ipk (A) 120 VCE = 600 V, Rgate = 10 W, VGE = 15 V TC = 110°C 100 TC = 80°C 80 60 Ramp Square 40 20 0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 24. Collector Current vs. Switching Frequency R(t), SQUARE−WAVE PEAK (°C/W) 1 RqJC = 0.33 50% Duty Cycle 0.1 20% 10% 5% 0.01 2% Junction R1 R2 Rn C1 C2 Cn 0.001 0.0001 Ri (°C/W) Ci (J/W) 0.0065 0.0154 0.0811 0.0039 0.0186 0.0539 0.1007 0.0314 0.1115 0.0897 0.0172 1.8437 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.000001 Case 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 25. IGBT Transient Thermal Impedance R(t), SQUARE−WAVE PEAK (°C/W) 1 RqJC = 0.61 50% Duty Cycle 20% 0.1 10% Junction R1 R2 Rn C1 C2 Cn Case 5% 2% 0.01 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.000001 0.00001 Ri (°C/W) Ci (J/W) 0.000090 0.000661 0.002014 0.002059 0.005527 0.031996 0.117443 0.129731 0.225628 0.551763 0.011089 0.015127 0.015703 0.048571 0.057211 0.031254 0.026926 0.077082 0.140155 0.181237 0.0001 0.001 PULSE TIME (sec) 0.01 Figure 26. Diode Transient Thermal Impedance www.onsemi.com 7 0.1 1 FGH40T120SQDNL4 Figure 27. Test Circuit for Switching Characteristics Figure 28. Definition of Turn On Waveform www.onsemi.com 8 FGH40T120SQDNL4 Figure 29. Definition of Turn Off Waveform www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−4LD CASE 340CJ ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13852G TO−247−4LD DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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