FGH75T65SQDNL4

IGBT - Field Stop, IV/4 Lead FGH75T65SQDNL4 This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop IV Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com 75 A, 650 V VCEsat (Typ.) = 1.6 V Features • • • • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Improved Gate Control Lowers Switching Losses Separate Emitter Drive Pin TO−247−4L for Minimal Eon Losses Optimized for High Speed Switching 100% of the Parts Tested for ILM These are Pb−Free Devices C G E1 E Typical Applications • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Neutral Point Clamp Topology C ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 650 V Collector current @ TC = 25°C @ TC = 100°C IC Diode Forward Current @ TC = 25°C @ TC = 100°C IF A 150 75 IFM 300 A Pulsed collector current, Tpulse limited by TJmax ICM ILM 300 A Gate−emitter voltage VGE $20 V V $30 Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C W 375 188 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2017 November, 2019 − Rev. 4 MARKING DIAGRAM A 150 75 Diode Pulsed Current TPULSE Limited by TJ Max Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.10) TO−247−4LD CASE 340CJ E E1 G 1 FGH75T65 SQDNL4 AYWWG A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping FGH75T65SQDNL4 TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: FGH75T65SQDNL4/D FGH75T65SQDNL4 THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.4 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.65 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 650 − − V VGE = 15 V, IC = 75 A VGE = 15 V, IC = 75 A, TJ = 175°C VCEsat − − 1.6 1.92 2.1 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage VGE = VCE, IC = 75 mA VGE(th) 4.0 4.8 5.6 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 650 V VGE = 0 V, VCE = 650 V, TJ = 175°C ICES − − − 6.0 0.25 − mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − ±250 nA Cies − 5100 − pF Coes − 115 − Cres − 12 − DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 400 V, IC = 75 A, VGE = 15 V Gate to collector charge Qg − 152 − Qge − 29 − Qgc − 39 − td(on) − 59 − nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time tr − 58 − td(off) − 354 − tf − 69 − Eon − 1.82 − Eoff − 1.86 − Total switching loss Ets − 3.68 − Turn−on delay time td(on) − 56 − tr − 57 − td(off) − 394 − tf − 73 − Eon − 2.22 − Turn−off switching loss Eoff − 2.02 − Total switching loss Ets − 4.24 − VF − − 1.60 1.70 2.0 − Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 75 A Rg = 20 W VGE = 15 V Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 175°C VCC = 400 V, IC = 75 A Rg = 20 W VGE = 15 V ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current VGE = 0 V, IF = 75 A VGE = 0 V, IF = 75 A, TJ = 175°C TJ = 25°C IF = 75 A, VR = 200 V diF/dt = 200 A/ms TJ = 175°C IF = 75 A, VR = 200 V diF/dt = 200 A/ms V trr − 134 − ns Qrr − 0.78 − mC Irrm − 10 − A trr − 202 − ns Qrr − 2.54 − mC Irrm − 20.2 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FGH75T65SQDNL4 TYPICAL CHARACTERISTICS 7V IC, COLLECTOR CURRENT (A) 140 6.5 V 120 100 80 6V 60 40 5.5 V 5V 20 0 1 2 3 4 5 6 8 7 60 6V 40 5.5 V 20 0 1 2 3 4 5 6 7 Figure 2. Output Characteristics 160 7V 120 6.5 V 100 80 60 6V 40 5V 20 0 1 2 3 4 5.5 V 5 6 7V 120 6.5 V 100 6V 80 60 5.5 V 40 5V 20 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Output Characteristics 140 120 100 80 60 40 TJ = 175°C 20 TJ = 25°C 1 2 3 4 5 6 7 8 9 10 8 1.8 1.7 IC = 75 A 1.6 1.5 IC = 50 A 1.4 1.3 1.2 IC = 25 A 1.1 1.0 −75 −50 −25 0 25 50 75 100 125 150 175 200 VGE, GATE−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Transfer Characteristics Figure 6. VCE(sat) vs. TJ www.onsemi.com 3 8 TJ = 175°C 140 0 8 7 160 IC, COLLECTOR CURRENT (A) 6.5 V 80 Figure 1. Output Characteristics TJ = −55°C 0 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) 140 0 7V 120 VCE, COLLECTOR−EMITTER VOLTAGE (V) 160 0 TJ = 150°C 140 0 9 IC, COLLECTOR CURRENT (A) 0 IC, COLLECTOR CURRENT (A) 160 TJ = 25°C VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 160 FGH75T65SQDNL4 TYPICAL CHARACTERISTICS 100K IF, FORWARD CURRENT (A) Cies 10K CAPACITANCE (pF) 100 TJ = 25°C 1K Coes 100 Cres 10 90 80 70 60 50 40 30 TJ = 175°C 20 10 0 10 30 20 40 50 60 70 80 90 0 100 2.4 12 10 8 6 4 VCE = 400 V VGE = 15 V IC = 75 A 2 1.5 2.0 40 20 60 80 100 120 140 160 VCE = 400 V VGE = 15 V IC = 75 A Rg = 20 W 2.3 2.2 2.5 3.0 Eon 2.1 Eoff 2.0 1.9 1.8 1.7 1.6 1.5 0 20 40 60 80 100 120 140 160 180 200 QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature 1000 1000 td(off) 100 tf td(on) 10 SWITCHING TIME (ns) td(off) SWITCHING TIME (ns) 1.0 Figure 8. Diode Forward Characteristics 14 1 0.5 Figure 7. Typical Capacitance 2.5 0 0 VF, FORWARD VOLTAGE (V) 16 0 TJ = 25°C VCE, COLLECTOR−EMITTER VOLTAGE (V) SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 1 tr VCE = 400 V VGE = 15 V IC = 75 A Rg = 20 W 0 25 50 75 100 125 150 175 td(on) tr 10 1 200 tf 100 VCE = 400 V VGE = 15 V TJ = 175°C Rg = 20 W 10 20 30 40 50 60 70 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 11. Switching Time vs. Temperature Figure 12. Switching Time vs. IC www.onsemi.com 4 80 90 FGH75T65SQDNL4 TYPICAL CHARACTERISTICS 5.0 1000 tf 100 td(on) tr 10 1 VCE = 400 V VGE = 15 V TJ = 175°C Rg = 20 W 10 20 30 40 50 60 70 80 3.5 Eoff 3.0 2.5 2.0 1.0 90 0 20 30 40 50 RG, GATE RESISTOR (W) Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. RG 3.5 VGE = 15 V TJ = 175°C IC = 75 A Rg = 20 W 3.0 SWITCHING LOSS (mJ) 100 td(on) tr tf VCE = 400 V VGE = 15 V TJ = 175°C IC = 75 A 0 10 IC, COLLECTOR CURRENT (A) td(off) SWITCHING TIME (ns) 4.0 Eon 1.5 1000 10 VCE = 400 V VGE = 15 V TJ = 175°C IC = 75 A 4.5 SWITCHING LOSS (mJ) SWITCHING TIME (ns) td(off) 2.5 60 Eon Eoff 2.0 1.5 1.0 0.5 10 20 30 40 50 0 60 150 200 250 300 350 400 450 500 550 RG, GATE RESISTOR (W) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. VCE IC, COLLECTOR CURRENT (A) 1000 SWITCHING TIME (ns) td(off) 10 tf tr 100 td(on) VGE = 15 V TJ = 175°C IC = 75 A Rg = 20 W 150 200 250 300 350 400 450 500 100 ms 10 1 ms 10 ms 1 0.1 550 10 ms 100 Single Pulse TC = 25°C TJ = 175°C 1 DC 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Switching Time vs. VCE Figure 18. Safe Operating Area www.onsemi.com 5 1000 FGH75T65SQDNL4 VR = 400 V 130 TJ = 175°C, IF = 75 A 110 90 TJ = 25°C, IF = 75 A 70 50 100 300 500 700 1100 900 1300 VR = 400 V 2.5 2.0 TJ = 175°C, IF = 75 A 1.5 TJ = 25°C, IF = 75 A 1.0 0.5 0 100 300 500 700 900 1100 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 19. trr vs. diF/dt Figure 20. Qrr vs. diF/dt 50 1300 2.20 VR = 400 V TJ = 175°C, IF = 75 A 40 30 TJ = 25°C, IF = 75 A 20 10 0 3.0 diF/dt, DIODE CURRENT SLOPE (A/ms) VF, FORWARD VOLTAGE (V) Irm, REVERSE RECOVERY CURRENT (A) trr, REVERSE RECOVERY TIME (ns) 150 Qrr, REVERSE RECOVERY CHARGE (mC) TYPICAL CHARACTERISTICS 100 300 500 700 900 1100 2.00 1.80 IF = 75 A 1.60 IF = 50 A 1.40 IF = 25 A 1.20 1.00 0.80 0.60 −75 −50 −25 1300 0 25 50 75 100 125 150 175 200 diF/dt, DIODE CURRENT SLOPE (A/ms) TJ, JUNCTION TEMPERATURE (°C) Figure 21. Irm vs. diF/dt Figure 22. VF vs. TJ www.onsemi.com 6 FGH75T65SQDNL4 TYPICAL CHARACTERISTICS R(t), SQUARE−WAVE PEAK (°C/W) 1 RqJC = 0.28 50% Duty Cycle 0.1 20% 10% 5% 0.01 2% Junction R1 R2 Rn C1 C2 Cn 0.001 0.0001 0.00001 Ri (°C/W) Ci (J/W) 0.0301 0.0033 0.0184 0.0172 0.0255 0.0392 0.0536 0.0590 0.1129 0.0886 0.0409 0.7735 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.000001 Case 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 23. IGBT Transient Thermal Impedance R(t), SQUARE−WAVE PEAK (°C/W) 1 RqJC = 0.62 50% Duty Cycle 20% 0.1 10% 5% 2% Junction R1 R2 Rn C1 C2 Cn Case 0.01 Single Pulse Ri (°C/W) Ci (J/W) 0.000125 0.000951 0.002753 0.003765 0.006647 0.009699 0.051480 0.152673 0.234748 0.654533 0.007994 0.010512 0.011485 0.026558 0.047571 0.103104 0.061427 0.065499 0.134709 0.152781 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.001 0.000001 0.00001 0.0001 0.001 PULSE TIME (sec) 0.01 Figure 24. Diode Transient Thermal Impedance Figure 25. Test Circuit for Switching Characteristics www.onsemi.com 7 0.1 1 FGH75T65SQDNL4 Figure 26. Definition of Turn On Waveform www.onsemi.com 8 FGH75T65SQDNL4 Figure 27. Definition of Turn Off Waveform www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−4LD CASE 340CJ ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13852G TO−247−4LD DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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