FGH75T65SHDTLN4

IGBT - Field Stop, Trench 650 V, 75 A Product Preview FGH75T65SHDTLN4 Using the novel field stop 3rd generation IGBT technology, FGH75T65SHDTLN4 offers the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction loss and switching loss are essential. www.onsemi.com Features • • • • • • • • • • 75 A, 650 V VCE(sat) = 1.6 V Eon = 1.06 mJ Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A 100% of the Parts Tested for ILM(1) High Input Impedance Fast Switching Tight Parameter Distribution Pb Free and RoHS Compliant Not Recommended for Reflow and Full PKG Dipping C G E1 E2 Typical Applications • Solar Inverter • UPS • Welder • Telecom • ESS • PFC MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector−to−Emitter Voltage VCES 650 V Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VGES ±20 ±30 V IC 150 A TO−247 THIN LEADS CASE 340CW Pulsed Collector Current (Note 1) ILM 300 A DEVICE MARKING INFORMATION Pulsed Collector Maximum Current (Note 2) ICM 300 A IF 125 A Parameter Collector Current TC = 25°C TC = 100°C Diode Forward Current TC = 25°C 75 TC = 100°C 75 Pulsed Diode Maximum Forward Current (Note 2) IFM 300 A Maximum Power Dissipation PD 455 W TC = 25°C TC = 100°C Operating Junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes (1/8″ from case for 5 seconds) 227 TJ, TSTG −55 to +175 °C TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 300 A, RG = 73 W, Inductive Load 2. Repetitive rating: pulse width limited by max. Junction temperature This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2018 November, 2019 − Rev. P2 Line 1: Date Code Line 2: Device Marking Line 3: Device Marking 1 ORDERING INFORMATION Device Package Shipping FGH75T65SHDTLN4 TO−247 30 Units / Tube Publication Order Number: FGH75T65SHDTLN4/D FGH75T65SHDTLN4 Table 1. THERMAL CHARACTERISTICS Symbol Value Unit RqJC Thermal Resistance, Junction to Case, for IGBT Parameter 0.33 _C/W RqJC Thermal Resistance, Junction to Case, for Diode 0.65 _C/W RqJA Thermal Resistance, Junction to Ambient 40 _C/W Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Collector−emitter breakdown voltage, gate−emitter short−circuited BVCES VGE = 0 V, IC = 1 mA 650 − − V Temperature Coefficient of Breakdown Voltage DBVCES/ DTJ VGE = 0 V, IC = 1 mA − 0.65 − V/°C Collector−emitter cut−off current, gate−emitter short−circuited ICES VGE = 0 V, VCE = 650 V − − 250 mA Gate leakage current, collector−emitter short−circuited IGES VGE = ±20 V, VCE = 0 V − − ±400 nA Gate−emitter threshold voltage VGE(th) VGE = VCE, IC = 75 mA 4.0 5.5 7.5 V Collector−emitter saturation voltage VCE(sat) VGE = 15 V, IC = 75 A, VGE = 15 V, IC = 75 A, TJ = 175°C − − 1.6 2.28 2.1 − mV/°C Input Capacitance Cies VCE = 30 V, VGE = 0 V, f = 1 MHz − 3710 − pF Output Capacitance Coes − 183 − Reverse Transfer Capacitance Cres − 43 − − 126 − OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS VCE = 400 V, IC = 75 A, VGE = 15 V Gate Charge Total Qg Gate−to−Emitter Charge Qge − 24.1 − Gate−to−Collector Charge Qgc − 47.6 − − 55 − − 50 − − 189 − − 39 − nC SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) tf TC = 25°C VCC = 400 V, IC = 75 A Rg = 15 W VGE = 15 V Inductive Load, TC = 25°C Turn−On Switching Loss Eon − 1.06 − Turn−Off Switching Loss Eoff − 1.56 − − 2.62 − − 48 − − 56 − − 205 − tf − 40 − Turn−On Switching Loss Eon − 2.34 − Turn−Off Switching Loss Eoff − 1.81 − Total Switching Loss Ets − 4.15 − − − 1.8 1.7 2.1 − Total Switching Loss Ets Turn−On Delay Time td(on) Rise Time Turn−Off Delay Time Fall Time tr td(off) VCC = 400 V, IC = 75 A Rg = 15 W VGE = 15 V Inductive Load, TC = 175°C ns mJ ns mJ DIODE CHARACTERISTICS Forward voltage VF IF = 75 A IF = 75 A, TJ = 175°C www.onsemi.com 2 V FGH75T65SHDTLN4 Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Reverse Recovery Time trr − 36 − ns Reverse Recovery Charge Qrr TJ = 25°C IF = 75 A, diF/dt = 200 A/ms − 18 − Reverse Recovery Time trr − 270 − ns Reverse Recovery Charge Qrr TJ = 175°C IF = 75 A, diF/dt = 200 A/ms − 2199 − mC Reverse Recovery Energy Erec − 160 − mJ DIODE CHARACTERISTICS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH75T65SHDTLN4 TYPICAL CHARACTERISTICS 300 12 V VGE = 20 V IC, DRAIN CURRENT (A) 250 15 V 200 150 100 8V 50 0 0 1 2 3 4 5 150 8V 100 50 0 1 2 3 4 5 Figure 1. Typical Output Characteristics (255C) Figure 2. Typical Output Characteristics (1755C) TC = 25°C TC = 175°C 180 120 60 0 1 2 3 4 5 6 IC = 150 A 3.0 2.5 75 A 2.0 40 A 1.5 1.0 −100 −50 0 50 100 150 Figure 3. Typical Saturation Voltage Characteristics Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level IC = 40 A 16 IC = 75 A 12 IC = 150 A 8 4 4 3.5 TC, CASE TEMPERATURE (°C) 20 8 12 16 20 6 4.0 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) 10 V VCE, DRAIN−SOURCE VOLTAGE (V) 240 0 15 V 200 VCE, DRAIN−SOURCE VOLTAGE (V) 300 0 250 0 6 12 V VGE = 20 V 10 V VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, DRAIN CURRENT (A) 300 200 20 IC = 40 A 16 IC = 75 A 12 IC = 150 A 8 4 0 0 4 8 12 16 VGE, GATE−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 5. Saturation Voltage vs. VGE (255C) Figure 6. Saturation Voltage vs. VGE (1755C) www.onsemi.com 4 20 FGH75T65SHDTLN4 TYPICAL CHARACTERISTICS 15 VGE, GATE−EMITTER VOLTAGE (V) 10K CAPACITANCE (pF) Ciss 1K Coss 100 10 f = 1 MHz VGE = 0 V TC = 25°C Crss 1 10 30 12 300 V 9 6 3 0 0 25 50 75 100 125 QG, GATE CHARGE (nC) Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics 150 1K SWITCHING TIME (ns) td(on) 100 tr td(off) 100 tf TC = 25°C TC = 175°C 10 400 V VCE, COLLECTOR EMITTER VOLTAGE (V) 400 SWITCHING TIME (ns) VCC = 200 V 10 15 20 25 30 35 40 45 10 50 TC = 25°C TC = 175°C 10 20 30 40 RG, GATE RESISTANCE (W) RG, GATE RESISTANCE (W) Figure 9. Turn−On Characteristics vs. Gate Resistance Figure 10. Turn−Off Characteristics vs. Gate Resistance 200 50 400 100 SWITCHING TIME (ns) SWITCHING TIME (ns) td(off) td(on) tr 10 30 45 60 tf TC = 25°C TC = 175°C TC = 25°C TC = 175°C 15 100 10 75 15 30 45 60 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Turn−On Characteristics vs. Collector Current Figure 12. Turn−Off Characteristics vs. Collector Current www.onsemi.com 5 75 FGH75T65SHDTLN4 TYPICAL CHARACTERISTICS 10 SWITCHING TIME (ns) SWITCHING TIME (ns) 10 Eoff = 175°C Eon = 175°C 1 20 25 30 35 40 45 15 30 45 60 75 Figure 13. Switching Loss vs. Gate Resistance Figure 14. Switching Loss vs. Collector Current 300 IC, COLLECTOR CURRENT (A) IC = 25°C IC = 50°C IC = 75°C 225 IC = 100°C 150 75 1K 10K 100K 100 ms 1 ms 10 ms 10 *Notes: 1. TC = 25°C 2. TJ = 175°C 3. Single Pulse 1 1 DC 10 100 1K f, SWITCHING FREQUENCY (Hz) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Load Frequency Template Figure 16. SOA Characteristics 100 TJ = 175°C 10 TJ = 75°C TJ = 25°C 0 10 ms 100 0.1 1M IRR, REVERSE RECOVERY CURRENT (A) COLLECTOR CURRENT (A) Eoff = 25°C IC, COLLECTOR CURRENT (A) 300 IF, FORWARD CURRENT (A) Eon = 25°C RG, GATE RESISTANCE (W) 300 1 1 0.1 50 375 0 Eon = 175°C Eoff = 25°C Eon = 25°C 15 Eoff = 175°C 1 2 3 4 5 18 175°C di/dt = 200 A/ms 16 12 175°C di/dt = 100 A/ms 8 25°C di/dt = 200 A/ms 4 0 25°C di/dt = 100 A/ms 0 10 20 30 40 50 60 70 VF, FORWARD VOLTAGE (V) IF, FORWARD CURRENT (A) Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current www.onsemi.com 6 80 FGH75T65SHDTLN4 500 2500 QRR, STORED RECOVERY CHARGE (mC) QRR, STORED RECOVERY CHARGE (nC) TYPICAL CHARACTERISTICS 450 di/dt = 100 A/ns, TC = 175°C 400 350 2000 di/dt = 200 A/ns, TC = 175°C 300 di/dt = 100 A/ns, TC = 175°C 1500 250 200 1000 di/dt = 100 A/ms, TC = 25°C 150 100 50 0 di/dt = 200 A/ns, TC = 175°C di/dt = 200 A/ms, TC = 25°C 0 10 20 30 40 50 60 70 80 di/dt = 100 A/ms, TC = 25°C 500 0 di/dt = 200 A/ms, TC = 25°C 0 10 20 30 40 50 60 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) Figure 19. Reverse Recovery Time Figure 20. Stored Charge 70 80 THERMAL RESPONSE (ZqJC) 0.6 50% Duty Cycle 0.1 20% 10% PDM 5% 2% 0.01 1% t1 t2 Single Pulse 0.001 0.00001 Duty Factor, D = t1/t2 Peak TJ = PDM X ZqJC + TC 0.0001 0.001 0.01 0.1 1 RECTANGULAR PULSE DURATION (s) Figure 21. Transient Thermal Impedance of IGBT THERMAL RESPONSE (ZqJC) 1 50% Duty Cycle 20% 0.1 10% PDM 5% 2% t1 t2 1% 0.01 0.005 Duty Factor, D = t1/t2 Peak TJ = PDM X ZqJC + TC Single Pulse 0.00001 0.0001 0.001 0.01 RECTANGULAR PULSE DURATION (s) Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 7 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 4−LEAD, THIN LEADS CASE 340CW ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON80893G DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−247 4−LEAD, THIN LEADS PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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