FGH40T120SMD-F155

1200 V, 40 A FS Trench IGBT Features General Description • FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. • High Speed Switching • Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 40 A • 100% of the Parts tested for ILM(1) • High Input Impedance • RoHS Compliant Applications • Solar Inverter, Welder, UPS & PFC applications. E C C G G COLLECTOR (FLANGE) Absolute Maximum Ratings T C Symbol VCES VGES IC E = 25°C unless otherwise noted Description Ratings Unit Collector to Emitter Voltage 1200 V Gate to Emitter Voltage ±25 V Transient Gate to Emitter Voltage ±30 V 80 A Collector Current @ TC = 25oC o Collector Current @ TC = 100 C 40 A ILM (1) Clamped Inductive Load Current @ TC = 25oC 160 A ICM (2) Pulsed Collector Current 160 A IF IFM PD o Diode Continuous Forward Current @ TC = 25 C 80 A Diode Continuous Forward Current o 40 A 240 A W @ TC = 100 C Diode Maximum Forward Current o Maximum Power Dissipation @ TC = 25 C 555 Maximum Power Dissipation @ TC = 100oC 277 W TJ Operating Junction Temperature -55 to +175 o C Tstg Storage Temperature Range -55 to +175 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C Thermal Characteristics Symbol Parameter Typ. Max. Unit RJC(IGBT) Thermal Resistance, Junction to Case -- 0.27 o C/W RJC(Diode) Thermal Resistance, Junction to Case -- 0.89 o C/W 40 o C/W RJA Thermal Resistance, Junction to Ambient -- Notes: 1. Vcc = 600 V,VGE = 15 V, IC = 160 A, RG = 10 Ω , Inductive Load 2. Limited by Tjmax ©2013 Semiconductor Components Industries, LLC. August-2017, Rev. 3 Publication Order Number: FGH40T120SMD/D FGH40T120SMD / FGH40T120SMD-F155 1200 V, 40 A FS Trench IGBT FGH40T120SMD / FGH40T120SMD-F155 Device Marking Device Package FGH40T120SMD FGH40T120SMD TO-247 A03 - - 30 FGH40T120SMD FGH40T120SMD-F155 TO-247G03 - - 30 Electrical Characteristics of the IGBT Symbol Parameter Reel Size Tape Width Quantity TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA 1200 - - V ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 40 mA, VCE = VGE 4.9 6.2 7.5 V IC = 40 A, VGE = 15 V TC = 25oC - 1.8 2.4 V IC = 40 A, VGE = 15 V, TC = 175oC - 2.0 - V - 4300 - pF VCE = 30 V, VGE = 0 V, f = 1MHz - 180 - pF - 100 - pF - 40 - ns On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characcteristics td(on) Turn-On Delay Time tr Rise Time - 47 - ns td(off) Turn-Off Delay Time - 475 - ns tf Fall Time Eon Turn-On Switching Loss VCC = 600 V, IC = 40 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 25oC - 10 - ns - 2.7 - mJ Eoff Turn-Off Switching Loss - 1.1 - mJ Ets Total Switching Loss - 3.8 - mJ td(on) Turn-On Delay Time - 40 - ns tr Rise Time - 55 - ns - 520 - ns - 50 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss - 3.4 - mJ Eoff Turn-Off Switching Loss - 2.5 - mJ Ets Total Switching Loss - 5.9 - mJ Qg Total Gate Charge - 370 - nC - 23 - nC - 210 - nC Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCC = 600 V, IC = 40 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 175oC VCE = 600 V, IC = 40 A, VGE = 15 V wwww.onsemi.com 2 FGH40T120SMD / FGH40T120SMD-F155 1200 V, 40 A FS Trench IGBT Package Marking and Ordering Information Symbol VFM Parameter Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 25oC - 3.8 4.8 V o IF = 40 A, TC = 175 C - 2.7 - V VR = 600 V, IF = 40 A, diF/dt = 200 A/us, TC = 25oC - 65 - ns - 7.2 - A - 234 - nC IF = 40 A, TC = VR = 600 V, IF = 40 A, diF/dt = 200 A/us, TC = 175oC wwww.onsemi.com 3 - 200 - ns - 18.0 - A - 1800 - nC FGH40T120SMD / FGH40T120SMD-F155 1200 V, 40 A FS Trench IGBT Electrical Characteristics of the DIODE Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 300 300 o TC = 25 C 20V Collector Current, IC [A] Collector Current, IC [A] 200 12V 150 100 VGE=10V 150 12V 100 VGE=10V 0 1 2 3 4 5 6 7 8 Collector-Emitter Voltage, VCE [V] 9 0 10 0 2 3 4 5 6 7 8 Collector-Emitter Voltage, VCE [V] 9 10 4 Collector Emitter Voltage, VCE [V] Common Emitter VGE = 15V o TC = 25 C 120 o TC = 175 C --- 80 40 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 3 80A 40A 2 IC=20A 1 25 5 Figure 5. Saturation Voltage vs. VGE 50 75 100 125 150 o Case Temperature TC [ C] 175 Figure 6. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o Collector Emitter Voltage, VCE [V] Collector Emitter Voltage, VCE [V] 1 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 160 Collector Current, IC [A] 15V 50 Figure 3. Typical Saturation Voltage Characteristics TC = 25 C 16 80A 12 40A 8 IC=20A 4 0 17V 200 50 0 20V 250 250 0 o TC = 175 C 15V 17V 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 o TC = 175 C 16 80A 12 40A 8 IC=20A 4 0 0 wwww.onsemi.com 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGH40T120SMD / FGH40T120SMD-F155 1200 V, 40 A FS Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Load Current vs. Frequency 200 6000 VCC = 600V Common Emitter VGE = 0V , f = 1MHz load Current : peak of square wave o Ciss TC = 25 C Collector Current, IC [A] Cappacitance [pF] 5000 4000 3000 2000 Coss 1000 160 120 o TC = 100 C 80 40 Duty cycle : 50% o Crss T = 100 C C Powe Dissipation = 277 W 1 0 1k 10 10k Collector-Emitter Voltage, VCE [V] 100k 1M Switching Frequency, f [Hz] Figure 9. Turn-on Characteristics vs. Gate Resistance Figure 10. Turn-off Characteristics vs. Gate Resistance 1000 1000 Switching Time [ns] Switching Time [ns] tr 100 td(on) Common Emitter VCC = 600V, VGE = 15V IC = 40A 10 td(off) 100 tf 10 Common Emitter VCC = 600V, VGE = 15V, IC = 40A o TC = 25 C o o TC = 175 C 1 1 0 10 o TC = 25 C 20 30 40 Gate Resistance, RG [] 50 Figure 11. Swithcing Loss vs. Gate Resistance 0 10 , TC = 175 C 20 30 40 50 Gate Resistance, RG [] 60 Figure 12. Turn-on Characteristics vs. Collector Current tr 10 Eon 100 Switching Time [ns] Switching Loss [mJ] 70 Eoff 1 Common Emitter VCC = 600V, VGE = 15V IC = 40A o TC = 25 C 0.1 td(on) Common Emitter VGE = 15V, RG = 10 o TC = 25 C 10 o o TC = 175 C 0 10 20 30 40 50 Gate Resistance, RG [] TC = 175 C 60 70 10 20 30 40 50 60 Collector Current, IC [A] wwww.onsemi.com 5 70 80 FGH40T120SMD / FGH40T120SMD-F155 1200 V, 40 A FS Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Swithcing Loss vs. Collector Current 30 1000 10 Switching Loss [mJ] Switching Time [ns] td(off) 100 tf 10 Eon Eoff 1 Common Emitter VGE = 15V, RG = 10 o Common Emitter VGE = 15V, RG = 10 o TC = 25 C TC = 25 C o TC = 175 C o , TC = 175 C 0.1 1 20 40 60 10 80 20 30 40 50 60 70 80 Collector Current, IC [A] Collector Current, IC [A] Figure 15. Gate Charge Characteristics Figure 16. SOA Characteristics 15 IcMAX (Pulsed) 12 200V 400V Collector Current, Ic [A] Gate Emitter Voltage, VGE [V] 100 VCC = 600V 9 6 3 DC Operation 1 Single Nonrepetitive 0.1 o TC = 25 C 0 50 100 150 200 250 300 Gate Charge, Qg [nC] 350 400 Figure 17. Forward Characteristics 1ms 10 ms 10 Common Emitter 0 10s 100s IcMAX (Continuous) o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.01 0.1 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Figure 18. Reverse Recovery Current Reverse Recovery Currnet, Irr [A] 10 Forward Current, IF [A] 100 10 o TC = 25 C o diF/dt = 200 A/s 8 6 diF/dt = 100 A/s 4 VR = 600 V, IF = 40 A 2 o TC = 25 C TC = 175 C --- 1 0 1 2 3 Forward Voltage, VF [V] 4 5 0 wwww.onsemi.com 6 10 20 30 40 50 60 Foward Current, IF [A] 70 80 FGH40T120SMD / FGH40T120SMD-F155 1200 V, 40 A FS Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Time Figure 20. Stored Charge 400 100 Stored Recovery Charge, Qrr [nC] o TC = 25 C 90 80 diF/dt = 100 A/s 70 diF/dt = 200 A/s 60 300 diF/dt = 200 A/s 200 diF/dt = 100 A/s 100 VR = 600 V, IF = 40 A o TC = 25 C 0 50 0 10 20 30 40 50 60 70 0 80 10 Forward Current, IF [A] 20 30 40 50 60 Forwad Current, IF [A] Figure 21. Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] Reverse Recovery Time, trr [ns] VR = 600 V, IF = 40 A 0.5 0.1 0.3 0.1 0.01 PDM 0.05 t1 t2 0.02 0.01 1E-3 1E-6 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-5 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec] wwww.onsemi.com 7 0.1 1 70 80 FGH40T120SMD / FGH40T120SMD-F155 1200 V, 40 A FS Trench IGBT Typical Performance Characteristics TO - 247A03 wwww.onsemi.com 8 FGH40T120SMD / FGH40T120SMD-F155 1200 V, 40 A FS Trench IGBT Mechanical Dimensions TO-247G03 wwww.onsemi.com 9 FGH40T120SMD / FGH40T120SMD-F155 1200 V, 40 A FS Trench IGBT Mechanical Dimensions ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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