FGH40T120SMD_F155

IGBT - Field Stop, Trench 1200 V, 40 A FGH40T120SMD, FGH40T120SMD-F155 Description Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. www.onsemi.com C Features • • • • • • FS Trench Technology, Positive Temperature Coefficient High Speed Switching Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A 100% of the Parts tested for ILM(1) High Input Impedance These Devices are Pb−Free and are RoHS Compliant G E E C G Applications • Solar Inverter, Welder, UPS & PFC applications TO−247−3LD CASE 340CH TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH40T120 SMD $Y &Z &3 &K FGH40T120SMD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 July, 2021 − Rev. 5 1 Publication Order Number: FGH40T120SMD/D FGH40T120SMD, FGH40T120SMD−F155 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Ratings Unit Collector to Emitter Voltage VCES 1200 V Gate to Emitter Voltage VGES ±25 V ±30 V 80 A 40 A ILM (Note 1) 160 A ICM (Note 2) 160 A IF 80 A 40 A Description Transient Gate to Emitter Voltage Collector Current TC = 25°C Collector Current TC = 100°C Clamped Inductive Load Current TC = 25°C IC Pulsed Collector Current Diode Continuous Forward Current TC = 25°C Diode Continuous Forward Current TC = 100°C Diode Maximum Forward Current Maximum Power Dissipation TC = 25°C Maximum Power Dissipation TC = 100°C IFM 240 A PD 555 W 277 W Operating Junction Temperature TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Vcc = 600 V,VGE = 15 V, IC = 160 A, RG = 10 W , Inductive Load 2. Limited by Tjmax THERMAL CHARACTERISTICS Symbol Typ Max Unit Thermal Resistance, Junction to Case Parameter RJC(IGBT) − 0.27 °C/W Thermal Resistance, Junction to Case RJC(Diode) − 0.89 °C/W RJA − 40 °C/W Thermal Resistance, Junction to Ambient PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FGH40T120SMD FGH40T120SMD TO−247−3 (PB−Free) − − 30 FGH40T120SMD FGH40T120SMD−F155 TO−247−3 (Pb−Free) − − 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A 1200 − − V Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA G−E Threshold Voltage VGE(th) IC = 40 mA, VCE = VGE 4.9 6.2 7.5 V Collector to Emitter Saturation Voltage VCE(sat) IC = 40 A, VGE = 15 V, TC = 25°C − 1.8 2.4 V IC = 40 A, VGE = 15 V, TC = 175°C − 2.0 − V ON CHARACTERISTICs www.onsemi.com 2 FGH40T120SMD, FGH40T120SMD−F155 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 4300 − pF DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Input Capacitance Cies Output Capacitance Coes − 180 − pF Reverse Transfer Capacitance Cres − 100 − pF − 40 − ns − 47 − ns td(off) − 475 − ns SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time td(on) tr Turn−Off Delay Time Fall Time VCC = 600 V, IC = 40 A, RG = 10  VGE = 15 V, Inductive Load, TC = 25°C tf − 10 − ns Turn−On Switching Loss Eon − 2.7 − mJ Turn−Off Switching Loss Eoff − 1.1 − mJ Total Switching Loss Ets − 3.8 − mJ Turn−On Delay Time td(on) − 40 − ns − 55 − ns td(off) − 520 − ns tf − 50 − ns Turn−On Switching Loss Eon − 3.4 − mJ Turn−Off Switching Loss Eoff − 2.5 − mJ Total Switching Loss Ets − 5.9 − mJ Total Gate Charge Qg − 370 − nC Gate to Emitter Charge Qge − 23 − nC Gate to Collector Charge Qgc − 210 − nC Min Typ Max Unit IF = 40 A, TC = 25°C − 3.8 4.8 V IF = 40 A, TC = 175°C − 2.7 − V VR = 600 V, IF = 40 A, diF/dt = 200 A/s, TC = 25°C − 65 − ns − 7.2 − A − 234 − nC − 200 − ns − 18.0 − A − 1800 − nC Rise Time tr Turn−Off Delay Time Fall Time VCC = 600 V, IC = 40 A, RG = 10  VGE = 15 V, Inductive Load, TC = 175°C VCE = 600 V, IC = 40 A, VGE = 15 V ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted) Parametr Diode Forward Voltage Symbol VFM Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Test Conditions VR = 600 V, IF = 40 A, diF/dt = 200 A/s, TC = 175°C www.onsemi.com 3 FGH40T120SMD, FGH40T120SMD−F155 TYPICAL PERFORMANCE CHARACTERISTICS 300 o 300 20V TC = 25 C 200 12V 150 100 VGE =10V 15V 150 12V 100 VGE=10V 50 0 1 2 3 4 5 6 7 8 9 0 10 0 1 Collector−Emitter Voltage, VCE [V] 4 160 Collector Emitter Voltage, VCE [V] Common Emitter VG E = 15V Collector Current, IC [A] o TC = 25 C 120 o TC = 175 C −−− 9 10 80 40 Common Emitter VGE = 15V 3 80A 40A 2 IC=20A 1 25 012345 Collector−Emitter Voltage, VCE [V] 50 75 100 125 150 Case Temperature TC [ oC] 175 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 3. Typical Saturation Voltage Characteristics 20 20 Common Emitter TC = 25 oC Common Emitter TC = 175 oC 16 Collector Emitter Voltage, V CE [V] Collector Emitter Voltage, VCE [V] 2 3 4 5 6 7 8 Collector−Emitter Voltage, VCE [V] Figure 2. Typical Output Characteristics Figure 1. Typical Output Characteristics 80A 12 40A 8 IC=20A 4 0 17V 200 50 0 20V 250 Collector Current, IC [A] Collector Current, IC [A] 250 0 o TC = 175 C 15V 17V 0 8 12 16 4 Gate−Emitter Voltage, VGE[V] 16 12 40A 8 IC=20A 4 0 20 80A 0 4 8 12 16 Gate−Emitter Voltage, VGE [V] 20 Figure 6. Saturation Voltage vs VGE Figure 5. Saturation Voltage vs VGE www.onsemi.com 4 FGH40T120SMD, FGH40T120SMD−F155 TYPICAL PERFORMANCE CHARACTERISTICS 200 6000 5000 load Current : peak of square wave o Ciss 160 TC = 25 C Collector Current, I C [A] Cappacitance [pF] VCC = 600V Common Emitter VGE = 0V , f = 1MHz 4000 3000 2000 Coss 1000 120 o TC = 100 C 80 40 Duty cycle : 50% o Crss T = 100 C C Powe Dissipation = 277 W 1 0 1k 10 10k Collector−Emitter Voltage, VCE [V] 100k 1M Switching Frequency, f [Hz] Figure 8. Load Current vs. Frequency Figure 7. Capacitance Characteristics 1000 100 Switching Time [ns] Switching Time [ns] 1000 tr td(on) Common Emitter VCC = 600V, VGE = 15V IC = 40A 10 td(off) 100 tf 10 Common Emitter VCC = 600V, VGE = 15V, IC = 40A o TC = 25 C o TC = 175 C 1 0 10 20 30 Gate Resistance, RG [ W] 40 1 50 TC = 25o C 0 10 , TC = 175o C 30 40 50 20 Gate Resistance, RG [W] 60 Figure 10. Turn−Off Characteristics vs. Collector Current Figure 9. Turn−On Characteristics vs. Gate Resistance tr 10 Eon 100 Switching Time [ns] Switching Loss [mJ] 70 Eoff 1 Common Emitter VCC = 600V, VGE = 15V IC = 40A o TC = 25 C 0.1 t d(on) Common Emitter VGE = 15V, RG = 10W o TC = 25 C 10 o o TC = 175 C 0 10 20 30 40 50 Gate Resistance , RG [ W] TC = 175 C 60 10 70 20 30 40 50 60 70 80 Collector Current, I C [A] Figure 12. Turn−On Characteristics vs. Collector Current Figure 11. Switching Loss vs. Gate Resistance www.onsemi.com 5 FGH40T120SMD, FGH40T120SMD−F155 TYPICAL PERFORMANCE CHARACTERISTICS 1000 30 10 100 Switching Loss [mJ] Switching Time [ns] td(off) tf 10 Common Emitter VGE = 15V, RG = 10 W o TC = 25 C 1 20 40 , Eon Eoff 1 Common Emitter VGE = 15V, RG = 10 W o TC = 25 C o TC = 175 C o TC = 175 C 60 0.1 80 10 20 30 40 50 60 70 80 Collector Current, I C [A] Collector Current, I C [ A] Figure 13. Turn−Off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current 15 IcMAX (Pulsed) 100 200V VCC = 600V 6 1ms 10 ms 10 DC Operation 1 Single Nonrepetitive 0.1 Common Emitter o TC = 25 C 0 0 100 s IcMAX (Continuous) 9 3 10s 400V Collector Current, Ic [A] Gate Emitter Voltage, V GE [V] 12 0.01 0.1 50 100 150 200 250 300 350 400 Gate Charge, Q g [nC] Pulse Tc = 25 oC Curves must be derated linearly with increase in temperature 1 10 100 1000 Collector−Emitter Voltage, VCE [V] Figure 16. SOA Characteristics Figure 15. Gate Charge Characteristics Reverse Recovery Currnet, I rr [A] 10 Forward Current, I F [A] 100 10 o TC = 25 C o 0 1 2 3 Forward Voltage, VF [V] 4 diF /dt = 100 A/ s VR = 600 V, IF = 40 A TC = 25o C TC = 175 C −−− 1 diF/dt = 200 A/ s 5 Foward Current, IF [A] Figure 18. Reverse Recovery Current Figure 17. Forward Characteristics www.onsemi.com 6 FGH40T120SMD, FGH40T120SMD−F155 TYPICAL PERFORMANCE CHARACTERISTICS 100 400 Stored Recovery Charge, Qrr [nC] TC = 25oC 90 80 diF/dt = 100 A/ s 70 di F/dt = 200 A/ s 60 50 0 10 20 30 40 50 60 70 300 di F /dt = 200 A/ s 200 diF /dt = 100 A/ s 100 VR = 600 V, IF = 40 A TC = 25oC 0 80 0 10 20 30 40 50 60 Forwad Current, I F [A] Forward Current, I F [A ] Figure 19. Reverse Recovery Time Figure 20. Stored Charge 1 Thermal Response [Zthjc] Reverse Recovery Time, t rr [ns] VR = 600 V, IF = 40 A 0.5 0.1 0.3 0.1 PDM 0.01 0.05 t1 0.02 0.01 1E−3 1E−6 single pulse 1E−5 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E−4 1E−3 0.01 Rectangular Pulse Duration [sec] Figure 21. Transient Thermal Impedance of IGBT www.onsemi.com 7 0.1 1 70 80 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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