IGBT - FS, Trench
1200 V, 40 A
FGH40T120SMDL4
Description
Using innovative field stop trench IGBT technology,
ON Semiconductor’s new series of field stop trench IGBTs offer
the optimum performance for hard switching application such as solar
inverter, UPS, welder and PFC applications.
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Features
•
•
•
•
•
•
FS Trench Technology, Positive Temperature Coefficient
Excellent Switching Performance due to Kelvin Emitter Pin
Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
100% of the Parts Tested for ILM
High Input Impedance
This Device is Pb−Free and is RoHS Compliant
VCES
IC
1200 V
40 A
C
E1: Kelvin Emitter
E2: Power Emitter
G
E1
Applications
E2
• Solar Inverter, Welder, UPS and PFC Applications
C
E2
E1
G
TO−247−4LD
CASE 340CJ
MARKING DIAGRAM
$Y&Z&3&K
FGH40T120
SMDL4
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Numeric Date Code
&K
= Lot Code
FGH40T120SMDL4 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
December, 2019 − Rev. 2
1
Publication Order Number:
FGH40T120SMDL4/D
FGH40T120SMDL4
ABSOLUTE MAXIMUM RATINGS
Symbol
FGH40T120SMDL4
Unit
VCES
Collector to Emitter Voltage
1200
V
VGES
Gate to Emitter Voltage
±25
V
Transient Gate to Emitter Voltage
±30
V
TC = 25°C
80
A
TC = 100°C
40
A
TC = 25°C
160
A
160
A
IC
Description
Collector Current
ILM (Note 1)
Clamped Inductive Load Current
ICM (Note 2)
Pulsed Collector Current
IF
Diode Continuous Forward Current
TC = 25°C
80
A
Diode Continuous Forward Current
TC = 100°C
40
A
240
A
555
W
IFM
Diode Maximum Forward Current
PD
Maximum Power Dissipation
277
W
TJ
Operating Junction Temperature
−55 to +175
°C
Storage Temperature Range
−55 to +175
°C
300
°C
TC = 25°C
TC = 100°C
TSTG
TL
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. VCC = 600 V, VGE = 15 V, IC = 160 A, RG = 20 W, Inductive Load.
2. Limited by Tjmax.
THERMAL CHARACTERISTICS
Symbol
Parameter
FGH75T65SQDT−F155
Unit
RqJC (IGBT)
Thermal Resistance, Junction to Case
0.27
_C/W
RqJC (Diode)
Thermal Resistance, Junction to Case
0.89
_C/W
40
_C/W
RqJA
Thermal Resistance, Junction to Ambient
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FGH40T120SMDL4
FGH40T120SMDL4
TO−247−4LD
−
−
30
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2
FGH40T120SMDL4
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
VGE = 0 V, IC = 250 mA
1200
−
−
V
ICES
Collector Cut−Off Current
VCE = VCES, VGE = 0 V
−
−
250
mA
IGES
G−E Leakage Current
VGE = VGES, VCE = 0 V
−
−
±400
nA
BVCES
ON CHARACTERISTICS
VGE(th)
G−E Threshold Voltage
IC = 40 mA, VCE = VGE
4.9
6.2
7.5
V
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 40 A, VGE = 15 V,
TC = 25 °C
−
1.8
2.4
V
IC = 40 A, VGE = 15 V,
TC = 175°C
−
2.0
−
V
VCE = 30 V, VGE = 0 V,
f = 1MHz
−
4300
−
pF
−
180
−
pF
−
100
−
pF
−
44
−
ns
−
42
−
ns
Turn−Off Delay Time
−
464
−
ns
Fall Time
−
24
−
ns
Eon
Turn−On Switching Loss
−
2.24
−
mJ
Eoff
Turn−Off Switching Loss
−
1.02
−
mJ
Ets
Total Switching Loss
−
3.26
−
mJ
Td(on)
Turn−On Delay Time
−
42
−
ns
−
48
−
ns
Turn−Off Delay Time
−
518
−
ns
DYNAMIC CHARACTERISTICS
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Td(on)
Tr
Td(off)
Tf
Tr
Td(off)
Tf
Turn−On Delay Time
Rise Time
Rise Time
VCC = 600 V, IC = 40 A,
RG = 10 W, VGE = 15 V,
Inductive Load, TC = 25°C
VCC = 600 V, IC = 40 A,
RG = 10 W, VGE = 15 V,
Inductive Load, TC = 25°C
Fall Time
−
24
−
ns
Eon
Turn−On Switching Loss
−
3.11
−
mJ
Eoff
Turn−Off Switching Loss
−
2.01
−
mJ
Ets
Total Switching Loss
−
5.12
−
mJ
Qg
Total Gate Charge
−
370
−
nC
Qge
Gate to Emitter Charge
−
23
−
nC
Qgc
Gate to Collector Charge
−
210
−
nC
VCE = 600 V, IC = 40 A,
VGE = 15 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGH40T120SMDL4
ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted)
Symbol
VFM
Parameter
Diode Forward Voltage
Trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
Trr
Diode Reverse Recovery Charge
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
Test Conditions
IF = 40 A
Min
Typ
Max
Unit
TC = 25°C
−
3.8
4.8
V
TC = 175°C
−
2.7
−
−
65
−
ns
−
7.2
−
A
−
234
−
nC
−
200
−
ns
−
18.0
−
A
−
1800
−
nC
VR = 600 V, IF = 40 A
diF/dt = 200 A/ms, TC = 25°C
VR = 600 V, IF = 40 A
diF/dt = 200 A/ms, TC = 175°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
FGH40T120SMDL4
TYPICAL PERFORMANCE CHARACTERISTICS
300
300
o
TC = 25 C
20V
200
12V
150
100
VGE=10V
15V
150
12V
100
VGE=10V
50
0
1
2
3
4
5
6
7
8
Collector−Emitter Voltage, VCE[V]
9
0
10
0
Figure 1. Typical Output
Characteristics
160
4
Collector Emitter Voltage, VCE [V]
Collector Current, IC [A]
o
TC = 25 C
o
TC = 175 C −−−
80
40
0
1
2
3
4
Collector−Emitter Voltage, VCE [V]
80A
40A
2
IC=20A
20
50
75
100
125
150
Case Temperature TC [oC]
175
Common Emitter
o
TC = 25 C
TC = 175 C
Collector Emitter Voltage, VCE [V]
Collector Emitter Voltage, VCE [V]
10
3
o
16
80A
12
40A
8
IC=20A
4
4
9
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Common Emitter
0
2
3
4
5
6
7
8
Collector−Emitter Voltage, VCE[V]
Common Emitter
VGE = 15V
1
25
5
Figure 3. Typical Saturation
Voltage Characteristics
20
1
Figure 2. Typical Output
Characteristics
Common Emitter
VGE = 15V
120
0
17V
200
50
0
20V
250
Collector Current, IC [A]
Collector Current, IC [A]
250
0
o
TC = 175 C
15V
17V
8
12
16
Gate−Emitter Voltage, VGE [V]
16
12
40A
8
Figure 5. Saturation Voltage vs. VGE
IC=20A
4
0
20
80A
0
4
8
12
16
Gate−Emitter Voltage, VGE [V]
Figure 6. Saturation Voltage vs. VGE
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5
20
FGH40T120SMDL4
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
15
6000
Cies
Gate Emitter Voltage, VGE [V]
Capacitance [pF]
5000
Common Emitter
VGE = 0 V, f = 1Mhz
TC = 25 C
4000
3000
2000
Coes
1000
Crss
12
200V
400V
VCC = 600V
9
6
3
Common Emitter
o
TC = 25 C
1
0
10
Collector−Emitter Voltage, VCE [V]
Figure 7. Capacitance Characteristics
50 100 150 200 250 300 350 400
Gate Charge, Qg [nC]
Figure 8. Gate Charge Characteristics
300
10000
tr
1000
100
Switching Time [ns]
Switching Time [ns]
0
td(on)
Common Emitter
VCC = 600V, V GE = 15V
IC = 40A
td(off)
100
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 40A
10
o
o
TC = 25 C
TC = 25 C
o
o
TC = 175 C
10
0
10
20
30
40
50
Gate Resistance, RG [W]
TC = 175 C
60
1
70
0
Figure 9. Turn−on Characteristics vs.
Gate Resistance
20
30
40
50
Gate Resistance, RG[W]
70
300
Switching Time [ns]
Eon
Eoff
Common Emitter
VCC = 600V, VGE = 15V
IC = 40A
1
100
tr
td(on)
o
TC = 25 C
o
o
TC = 175 C
0
10
20
30
40
50
Gate Resistance, RG[W]
Common Emitter
VGE = 15V, RG = 10W
o
TC = 25 C
0.5
60
Figure 10. Turn−off Characteristics
vs. Gate Resistance
8
Switching Loss [mJ]
10
60
10
10
70
TC = 175 C
20
30
40
50
60
70
80
Collector Current, IC [A]
Figure 11. Switching Loss vs.
Gate Resistance
Figure 12. Turn−on Characteristics
vs. Collector Current
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6
FGH40T120SMDL4
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
10
1000
Eon
Switching Loss [mJ]
Switching Time [ns]
td(off)
100
tf
10
Common Emitter
VGE = 15V, RG = 10 W
Eoff
1
Common Emitter
VGE = 15V, RG = 10 W
o
o
TC = 25 C
TC = 25 C
o
o
TC = 175 C
1
10
20
30
40
50
60
70
0.1
10
80
TC = 175 C
20
Collector Current, IC [A]
Figure 13. Turn−off Characteristics
vs. Collector Current
200
70
80
o
TC = 100 C
80
40 Duty cycle : 50%
10ms
100ms
IcMAX (Continuous)
Collector Current, Ic [A]
Collector Current, IC [A]
60
C [A]
100
160
1ms
10 ms
10
DC Operation
1
Single Nonrepetitive
0.1 Pulse Tc = 25 C
Curves must be derated
linearly with increase
in temperature
T = 100 oC
C
Power Dissipation = 277 W
10k
50
IcMAX (Pulsed)
load Current : peak of square wave
0
1k
40
Figure 14. Switching Loss
vs. Collector Current
VCC = 600V
120
30
Collector Current, I
100k
0.01
0.1
1M
Switching Frequency, f [Hz]
Figure 15. Load Current vs. Frequency
1
10
100
1000
Collector−Emitter Voltage, VCE [V]
Figure 16. SOA Characteristics
21
o
Reverse Recovery Current, Irr [A]
TC = 25 C
Forward Current, IF [A]
100
10
o
TC = 25 C
18 T = 175oC
C
diF/dt = 200A/ ms
15
12
diF/dt = 100A/ ms
9
diF/dt = 200A/ ms
6
diF/dt = 100A/ ms
3
o
TC = 175 C −−−
1
0
1
2
3
4
Forward Voltage, VF [V]
0
5
Figure 17. Forward Characteristics
0
20
40
60
Forward Current, IF [A]
80
Figure 18. Reverse Recovery Current
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7
FGH40T120SMDL4
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
3000
360
o
o
300
TC = 175 C
Stored Recovery Charge, Qrr [nC]
TC = 25 C
o
---
240
180
di/dt = 100A/ ms
di/dt = 200A/ ms
120
60
0
20
40
60
2500
o
TC = 175 C
---
2000
1500
di/dt = 100A/ ms
1000
500
0
80
di/dt = 200A/ ms
0
20
40
60
Forward Current,
, IF [A]
Forward Current,
, IF [A]
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
1
Thermal Response [Zthjc]
0
0.5
0.1
0.3
0.1
PDM
0.01 0.05
t1
0.02
0.01
1E−3
1E−6
single pulse
1E−5
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E−4
1E−3
0.01
0.1
1
t1, Rectangular Pulse Duration [sec]
Figure 21. Transient Thermal Impedance of IGBT
2
1
Thermal Response [Zthjc]
Reverse Recovery Time, trr [ns]
TC = 25 C
0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
PDM
t1
single pulse
1E−3
1E−5
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E−4
1E−3
0.01
0.1
t1, Rectangular Pulse Duration [sec]
Figure 22. Transient Thermal Impedance of Diode
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8
1
80
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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