FGH40T100SMD

IGBT - Field Stop, Trench 1000 V, 40 A FGH40T100SMD, FGH40T100SMD-F155 Description Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. www.onsemi.com C Features • • • • • High Current Capability Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A High Input Impedance Fast Switching These Devices are Pb−Free and are RoHS Compliant G E E C G Applications • UPS, Welder, PFC COLLECTOR (FLANGE) TO−247−3LD CASE 340CK FGH40T100SMD TO−247−3LD CASE 340CH FGH40T100SMD−F155 MARKING DIAGRAM $Y&Z&3&K FGH40T100 SMD $Y &Z &3 &K FGH40T100SMD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2012 November, 2020 − Rev. 4 1 Publication Order Number: FGH40T100SMD/D FGH40T100SMD, FGH40T100SMD−F155 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Ratings Unit Collector to Emitter Voltage VCES 1000 V Gate to Emitter Voltage VGES ±25 V ±30 V 80 A 40 A Description Transient Gate to Emitter Voltage IC Collector Current TC = 25°C Collector Current TC = 100°C Pulsed Collector Current (Note 1) TC = 25°C ICM 120 A Diode Forward Current TC = 25°C IF 80 A Diode Forward Current TC = 100°C 40 A Pulsed Diode Forward Current (Note 1) TC = 25°C IFM 120 A Maximum Power Dissipation TC = 25°C PD 333 W Maximum Power Dissipation TC = 100°C 166 W Operating Junction Temperature TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Typ Max Unit Thermal Resistance, Junction to Case (IGBT) Parameter RJC − 0.45 °C/W Thermal Resistance, Junction to Case (Diode) RJC − 0.8 °C/W Thermal Resistance, Junction to Ambient RJA − 40 °C/W PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FGH40T100SMD FGH40T100SMD TO−247−3 − − 30 FGH40T100SMD FGH40T100SMD−F155 TO−247−3 − − 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit 1000 − − V OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 1 mA Temperature Coefficient of Breakdown Voltage BVCES/TJ VGE = 0 V, IC = 250 A Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 1000 A G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±500 nA G−E Threshold Voltage VGE(th) IC = 250 A, VCE = VGE 4.2 5.3 6.5 V Collector to Emitter Saturation Voltage VCE(sat) IC = 40 A, VGE = 15 V − 1.9 2.3 V IC = 40 A, VGE = 15 V, TC = 175°C − 2.4 − V 0.6 V/°C ON CHARACTERISTICS www.onsemi.com 2 FGH40T100SMD, FGH40T100SMD−F155 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 3980 5295 pF DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Input Capacitance Cies Output Capacitance Coes − 124 165 pF Reverse Transfer Capacitance Cres − 76 115 pF − 29 38 ns − 42 55 ns td(off) − 285 371 ns SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time td(on) tr Turn−Off Delay Time Fall Time VCC = 600 V, IC = 40 A, RG = 10  VGE = 15 V, Inductive Load, TC = 25°C tf − 23 30 ns Turn−On Switching Loss Eon − 2.35 3.1 mJ Turn−Off Switching Loss Eoff − 1.15 1.5 mJ Total Switching Loss Ets − 3.5 4.6 mJ Turn−On Delay Time td(on) − 27 36 ns − 49 64 ns td(off) − 285 371 ns tf − 20 26 ns Turn−On Switching Loss Eon − 4.4 5.7 mJ Turn−Off Switching Loss Eoff − 1.9 2.5 mJ Total Switching Loss Ets − 6.3 8.2 mJ Total Gate Charge Qg − 265 398 nC Gate to Emitter Charge Qge − 32 48 nC Gate to Collector Charge Qgc − 135 203 nC Min Typ Max Unit TC = 25°C − 3.4 4.4 V TC = 175°C − 2.6 − TC = 25°C − 60 78 TC = 175°C − 256 − TC = 25°C − 185 260 TC = 175°C − 1512 − Rise Time tr Turn−Off Delay Time Fall Time VCC = 600 V, IC = 40 A, RG = 10  VGE = 15 V, Inductive Load, TC = 175°C VCE = 600 V, IC = 40 A, VGE = 15 V ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted) Parametr Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol VFM trr Test Conditions IF = 40 A IF = 40 A, dIF/dt = 200 A/s Qrr ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH40T100SMD, FGH40T100SMD−F155 TYPICAL PERFORMANCE CHARACTERISTICS 20 V IC, Collector Current (A) 100 15 V 12 V 120 TC = 25°C 20 V TC = 175°C 12 V 15 V IC, Collector Current (A) 120 80 10 V 60 40 20 90 10 V 60 VGE = 8 V 30 VGE = 8 V 0 0 2 4 6 8 VCE, Collector−Emitter Voltage (V) 0 10 VCE, Collector−Emitter Voltage (V) IC, Collector Current (A) 4 Common Emitter VGE = 15 V TC = 25°C TC = 175°C 90 60 30 0 0 1 2 3 4 VCE, Collector−Emitter Voltage (V) IC = 20 A VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V) 80 A IC = 20 A 8 12 16 50 75 100 125 150 175 20 8 4 25 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 12 0 40 A 2 TC, Case Temperature (°C) 16 40 A Common Emitter VGE = 15 V 80 A 1 5 Common Emitter TC = 25°C 4 6 3 Figure 3. Typical Saturation Voltage Characteristics 20 2 4 VCE, Collector−Emitter Voltage (V) Figure 2. Typical Output Characteristics Figure 1. Typical Output Characteristics 120 0 16 12 8 40 A 20 80 A 4 0 VGE, Gate−Emitter Voltage (V) Common Emitter TC = 175°C IC = 20 A 4 8 12 16 VGE, Gate−Emitter Voltage (V) Figure 6. Saturation Voltage vs VGE Figure 5. Saturation Voltage vs VGE www.onsemi.com 4 20 FGH40T100SMD, FGH40T100SMD−F155 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 10000 15 VGE, Gate−Emitter Voltage (V) Capacitance (pF) Cies 1000 Coes 100 10 0.1 Cres Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 1 10 VCE, Collector−Emitter Voltage (V) 12 400 V 200 V 9 6 3 0 30 Common Emitter TC = 25°C 0 Figure 7. Capacitance Characteristics 100 tr td(on) 0 Common Emitter VCC = 600 V, VGE = 15 V IC = 40 A TC = 25°C TC = 175°C 10 20 30 40 RG, Gate Resistance () 100 tf Common Emitter VCC = 600 V, VGE = 15 V IC = 40 A TC = 25°C TC = 175°C 10 1 50 0 10 20 30 40 50 RG, Gate Resistance () Figure 10. Turn−Off Characteristics vs. Gate Resistance 10 1000 Common Emitter VGE = 15 V, RG = 10  TC = 25°C TC = 175°C Switching Time (ns) Eon Switching Loss (mJ) 300 td(off) Figure 9. Turn−On Characteristics vs. Gate Resistance Eoff 1 Common Emitter VCC = 600 V, VGE = 15 V IC = 40 A TC = 25°C TC = 175°C 0.1 100 150 200 250 Qg, Gate Charge (nC) 2000 1000 Switching Time (ns) Switching Time (ns) 50 Figure 8. Gate Charge Characteristics 200 10 VCC = 600 V 0 10 20 30 40 td(on) 10 20 50 tr 100 30 40 50 60 70 80 RG, Gate Resistance () IC, Collector Current (A) Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn−On Characteristics vs. Collector Current www.onsemi.com 5 FGH40T100SMD, FGH40T100SMD−F155 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 1000 15 10 Eon 100 tf 10 1 Switching Loss (mJ) Switching Time (ns) td(off) Common Emitter VGE = 15 V, RG = 10  TC = 25°C TC = 175°C 20 30 40 50 60 70 1 Eoff Common Emitter VGE = 15 V, RG = 10  TC = 25°C TC = 175°C 0.1 20 80 IC, Collector Current (A) IC, Collector Current (A) IC, Collector Current (A) 100 s 10 *Notes: 1. TC = 25°C 2. TJ = 175°C 3. Single Pulse 0.1 1 Irr, Reverse Recovery Current (A) IF, Forward Current (A) TC = 75°C 10 TC = 25°C TC = 25°C TC = 75°C TC = 175°C 2 3 100 10 1000 2000 VCE, Collector−Emitter Voltage (V) 21 1 10 ms Figure 16. SOA Characteristics 80 0 1 ms 1 0.01 1M DC Figure 15. Load Current vs. Frequency 1 80 10 s f, Switching Frequency (Hz) TC = 175°C 70 100 Duty Cycle: 50% TC = 125°C Power Dissipation = 111 W 100k 60 300 50 10k 50 Figure 14. Switching Loss vs. Collector Current VCC = 600 V Load Current: Peak of Square Wave 0 1k 40 IC, Collector Current (A) Figure 13. Turn−Off Characteristics vs. Collector Current 100 30 4 VF, Forward Voltage (V) diF/dt = 200 A/s 15 12 diF/dt = 100 A/s 9 diF/dt = 200 A/s 6 diF/dt = 100 A/s 3 0 5 TC = 25°C TC = 175°C 18 0 20 40 60 80 IF, Forward Current (A) Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current www.onsemi.com 6 FGH40T100SMD, FGH40T100SMD−F155 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 2500 300 Qrr, Stored Recovery Charge (nC) TC = 25°C TC = 175°C 240 180 diF/dt = 200 A/s diF/dt = 100 A/s 120 60 0 20 40 60 IF, Forward Current (A) 2000 1500 1000 diF/dt = 200 A/s diF/dt = 100 A/s 500 0 80 TC = 25°C TC = 175°C 0 20 40 60 IF, Forward Current (A) Figure 20. Stored Charge Figure 19. Reverse Recovery Time 1 Thermal Response (Zjc) 0 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (sec) Figure 21. Transient Thermal Impedance of IGBT 1 Thermal Response (Zjc) trr, Reverse Recovery Time (ns) 360 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.00001 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC 0.0001 0.001 0.01 Rectangular Pulse Duration (sec) Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 7 0.1 80 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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