FGH80N60FD2TU

IGBT - Field Stop 600 V, 40 A FGH80N60FD2 Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for induction heating and PFC applications where low conduction and switching losses are essential. Features • • • • • High Current Capability Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 40 A High Input Impedance Fast Switching This Device is Pb−Free and is RoHS Compliant www.onsemi.com VCES IC 600 V 40 A C G Applications • Induction Heating, PFC E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH80N60 FD2 $Y &Z &3 &K FGH80N60FD2 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 February, 2020 − Rev. 3 1 Publication Order Number: FGH80N60FD2/D FGH80N60FD2 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate−Emitter Voltage ±20 V TC = 25°C 80 A TC = 100°C 40 A Pulsed Collector Current TC = 25°C 160 A Maximum Power Dissipation TC = 25°C 290 W TC = 100°C 116 W Operating Junction Temperature −55 to +150 °C Storage Temperature Range −55 to +150 °C 300 °C IC ICM (Note 1) PD TJ TSTG TL Description Collector Current Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter Typ. Max. Unit RqJC (IGBT) Thermal Resistance, Junction to Case − 0.43 _C/W RqJA (Diode) Thermal Resistance, Junction to Case − 1.45 _C/W Thermal Resistance, Junction to Ambient − 40 _C/W RqJA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH80N60FD2TU FGH80N60FD2 TO−247 Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGE = 0 V, IC = 250 mA 600 − − V VGE = 0 V, IC = 250 mA − 0.6 − V/°C OFF CHARACTERISTICS BVCES Collector−Emitter Breakdown Voltage DBVCES / DTJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 mA IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA 4.5 5.5 7.0 V ON CHARACTERISTICS VGE(th) G−E Threshold Voltage IC = 250 mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V, − 1.8 2.4 V IC = 40 A, VGE = 15 V, TC = 125°C − 2.05 − V VCE = 30 V, VGE = 0 V, f = 1 MHz − 2110 − pF − 200 − pF − 60 − pF DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance www.onsemi.com 2 FGH80N60FD2 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit − 21 − ns − 56 − ns Turn−Off Delay Time − 126 − ns Fall Time − 50 100 ns Eon Turn−On Switching Loss − 1 1.5 mJ Eoff Turn−Off Switching Loss − 0.52 0.78 mJ Ets Total Switching Loss − 1.52 2.28 mJ Td(on) Turn−On Delay Time − 20 − ns SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf Tr VCC = 400 V, IC = 40 A, RG = 10 W, VGE = 15 V, Inductive Load, TC = 25°C Turn−On Delay Time Rise Time VCC = 400 V, IC = 40 A, RG = 10 W, VGE = 15 V, Inductive Load, TC = 125°C − 54 − ns Turn−Off Delay Time − 131 − ns Fall Time − 70 − ns Eon Turn−On Switching Loss − 1.1 − mJ Eoff Turn−Off Switching Loss − 0.78 − mJ Ets Total Switching Loss − 1.88 − mJ Qg Total Gate Charge − 120 − nC Qge Gate−Emitter Charge − 14 − nC Qgc Gate−Collector Charge − 58 − nC Td(off) Tf Rise Time VCE = 400 V, IC = 40 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Symbol VFM Trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Test Conditions IF = 15 A IF = 15 A, diF/dt = 200 A/ms Diode Reverse Recovery Current Diode Reverse Recovery Charge Min Typ Max Unit TC = 25°C − 1.2 1.5 V TC = 125°C − 1.0 − TC = 25°C − 61 − TC = 125°C − 125 − TC = 25°C − 4.8 − TC = 125°C − 8.4 − TC = 25°C − 146 − TC = 125°C − 525 − ns A nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH80N60FD2 TYPICAL PERFORMANCE CHARACTERISTICS o 160 15V TC = 25 C 20V 120 Collector Current, IC (A) Collector Current, IC (A) 160 12V 10V 80 40 0 VGE = 8V 0 2 4 6 8 40 VGE = 8V 0 0 2 4 6 8 10 Collector−Emitter Voltage, VCE (V) Figure 2. Typical Saturation Voltage Characteristics 160 Common Emitter VCE = 20V Common Emitter VGE = 15V Collector Current, IC (A) Collector Current, IC (A) 10V 80 10 160 o TC = 25 C 120 o TC = 125 C 80 40 0 1 2 3 4 5 o TC = 25 C 120 o TC = 125 C 80 40 0 6 2 Collector−Emitter Voltage, VCE (V) 4 6 8 Collector−Emitter Voltage, VCE (V) 20 80A 2.5 40A 2.0 20A 1.5 Common Emitter VGE = 15V 25 50 75 100 12 Figure 4. Transfer Characteristics 3.5 3.0 10 Gate−Emitter Voltage,VGE (V) Figure 3. Typical Saturation Voltage Characteristics Collector−Emitter Voltage, VCE (V) 12V 120 Figure 1. Typical Output Characteristics 1.0 15V 20V Collector−Emitter Voltage, VCE (V) 0 o TC = 125 C o TC = 25 C 16 12 8 40A 4 80A IC = 20A 0 125 Common Emitter 4 8 12 16 20 Gate−Emitter Voltage, VGE (V) Case Temperature, TC (5C) Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE www.onsemi.com 4 FGH80N60FD2 20 5000 Common Emitter Common Emitter VGE = 0V, f = 1MHz o TC = 125 C 16 4000 Capacitance (pF) CE Collector−Emitter Voltage, VCE (V) TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 12 8 40A 4 3000 Coss 2000 1000 80A Crss IC = 20A 0 4 8 12 16 0 0.1 20 Gate−Emitter Voltage, VGE (V) o 10ms 100 TC = 25 C Vcc = 100V 300V 200V 9 6 3 0 50 100 100ms 10 1ms DC Single Nonrepetitive Pulse TC=255C 0.1 0.01 150 10 ms 1 Curves must be derated linearly with increase in temperature 1 10 Gate Charge, Qg (nC) 100 1000 Collector−Emitter Voltage, VCE (V) Figure 9. Gate Charge Characteristics Figure 10. SOA Characteristics 200 200 100 Switching Time (ns) 100 10 tr Common Emitter VCC = 400V, VGE = 15V IC = 40A td(on) 10 o TC = 25 C Safe Operating Area o o 1 30 400 Common Emitter 12 0 10 Figure 8. Capacitance Characteristics Collector Current, IC (A) Gate−Emitter Voltage, VGE (V) 15 1 Collector−Emitter Voltage, VGE (V) Figure 7. Saturation Voltage vs. VGE Collector Current, IC (A) o TC = 25 C Ciss VGE = 20V, TC = 100 C 1 10 100 5 1000 Collector−Emitter Voltage, VCE (V) TC = 125 C 0 10 20 30 40 50 Gate Resistance, RG (W) Figure 11. Turn−Off Switching SOA Characteristics Figure 12. Turn−On Characteristics vs. Gate Resistance www.onsemi.com 5 FGH80N60FD2 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 2000 200 Common Emitter VCC = 400V, VGE = 15V IC = 40A 1000 o TC = 125 C td(off) 100 tf 10 20 30 40 td(on) 10 20 50 40 Figure 13. Turn−Off Characteristics vs. Gate Resistance 5 o Switching Time (ns) Switching Loss (mJ) o TC = 125 C td(off) 100 tf 40 60 Eon o o TC = 125 C Eoff 1 40 60 Eon Eoff 1 10 20 30 40 Figure 16. Switching Loss vs. Gate Resistance 10 TC = 25 C o TC = 125 C Gate Resistance, RG (W) Figure 15. Turn−Off Characteristics vs. Collector Current Common Emitter VGE = 15V, RG = 10 W o TC = 25 C 0.3 0 80 Collector Current, IC (A) Switching Loss (mJ) Common Emitter VCC = 400V, VGE = 15V IC = 40A TC = 25 C 0.1 20 80 Figure 14. Turn−On Characteristics vs. Collector Current Common Emitter VGE = 15V, RG = 10 W 20 20 60 Collector Current, IC (A) Gate Resistance, RG (W) 500 tr o TC = 125 C Switching Time (ns) Switching Time (ns) o 0 TC = 25 C 100 o TC = 25 C 10 Common Emitter VGE = 15V, RG = 10 W 80 Collector Current, IC (A) Figure 17. Switching Loss vs. Collector Current www.onsemi.com 6 50 FGH80N60FD2 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Thermal Response (Zthjc) 1 0.5 0.1 0.2 0.01 0.05 0.02 0.01 0.1 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E−3 1E−5 1E−4 1E−3 0.01 0.1 1 Rectangular Pulse Duration (sec) Figure 19. Transient Thermal Impedance of IGBT 10 Stored Recovery Charge, Qrr (nC) Forward Current, IF (A) 1000 o TC = 125 C o TC = 25 C 1 0.1 0 1 2 800 o 125 C 600 400 o 25 C 200 0 100 3 200 Forward Voltage, VF (V) Figure 18. Forward Characteristics Reverse Recovery Current. Irr (A) Reverse Recovery Time, trr (ns) 20 140 120 o 125 C 100 80 60 o 20 100 400 Figure 20. Stored Charge 160 40 300 di/dt, (A/ms) 25 C 200 300 400 15 o 125 C 10 5 o 25 C 0 100 200 300 di/dt, (A/ms) di/dt, (A/ms) Figure 21. Reverse Recovery Time Figure 22. Reverse Recovery Current www.onsemi.com 7 400 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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