FGH80N60FDTU

IGBT - Field Stop 600 V, 80 A FGH80N60FD Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. www.onsemi.com Features • • • • • C High Current Capability Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A High Input Impedance Fast Switching This Device is Pb−Free and is RoHS Compliant G E Applications • Induction Heating, PFC, Telecom, ESS E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH80N60 FD $Y &Z &3 &K FGH80N60FD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007 February, 2020 − Rev. 3 1 Publication Order Number: FGH80N60FD/D FGH80N60FD ABSOLUTE MAXIMUM RATINGS Description Symbol Ratings Unit Collector to Emitter Voltage VCES 600 V Gate to Emitter Voltage VGES ±20 V IC 80 A Collector Current TC = 25°C 40 A Pulsed Collector Current TC = 100°C TC = 25°C ICM (Note 1) 160 A Maximum Power Dissipation TC = 25°C PD 290 W 116 W TC = 100°C Operating Junction Temperature TJ −55 to +150 °C Storage Temperature Range Tstg −55 to +150 °C Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Parameter Symbol Max. Unit Thermal Resistance, Junction−to−Case RJC (IGBT) 0.43 °C/W Thermal Resistance, Junction−to−Case RJC (Diode) 1.5 °C/W RJA 40 °C/W Thermal Resistance, Junction−to−Ambient PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Package Method Reel Size Tape Width Quantity FGH80N60FDTU FGH80N60FD TO−247 Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A 600 − − V Temperature Coefficient of Breakdown Voltage BVCES/TJ VGE = 0 V, IC = 250 A − 0.6 − V/°C Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA G−E Threshold Voltage VGE(th) IC = 250 A, VCE = VGE 4.5 5.5 7.0 V Collector to Emitter Saturation Voltage VCE(sat) IC = 40 A, VGE = 15 V − 1.8 2.4 V IC = 40 A, VGE = 15 V, TC = 125°C − 2.05 − V VCE = 30 V, VGE = 0 V, f = 1 MHz − 2110 − pF ON CHARACTERISTICs DYNAMIC CHARACTERISTICS Input Capacitance Cies Output Capacitance Coes − 200 − pF Reverse Transfer Capacitance Cres − 60 − pF www.onsemi.com 2 FGH80N60FD ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 21 − ns − 56 − ns td(off) − 126 − ns tf − 50 100 ns Turn−On Switching Loss Eon − 1 1.5 mJ Turn−Off Switching Loss Eoff − 0.52 0.78 mJ Total Switching Loss Ets − 1.52 2.28 mJ Turn−On Delay Time td(on) − 20 − ns SWITCHING CHARACTERISTICS Turn−On Delay Time VCC = 400 V, IC = 40 A, RG = 10  VGE = 15 V, Inductive Load, TC = 25°C td(on) Rise Time tr Turn−Off Delay Time Fall Time Rise Time VCC = 400 V, IC = 40 A, RG = 10  VGE = 15 V, Inductive Load, TC = 125°C − 54 − ns td(off) tr − 131 − ns tf − 70 − ns Turn−On Switching Loss Eon − 1.1 − mJ Turn−Off Switching Loss Eoff − 0.78 − mJ Total Switching Loss Ets − 1.88 − mJ Total Gate Charge Qg − 120 − nC Gate to Emitter Charge Qge − 14 − nC Gate to Collector Charge Qgc − 58 − nC Min Typ Max Unit TC = 25°C − 2.3 2.8 V TC = 125°C − 1.7 − TC = 25°C − 36 − TC = 125°C − 105 − TC = 25°C − 2.6 − TC = 125°C − 7.8 − TC = 25°C − 46.8 − TC = 125°C − 409 − Turn−Off Delay Time Fall Time VCE = 400 V, IC = 40 A, VGE = 15 V ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted) Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Current Diode Reverse Recovery Charge Symbol VFM trr Test Conditions IF = 20 A IF = 20 A, diF/dt = 200 A/s Irr Qrr ns A nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH80N60FD TYPICAL PERFORMANCE CHARACTERISTICS TC = 25°C 20 V 120 160 15 V 12 V 10 V 80 40 0 VGE = 8 V 0 2 4 TC = 125°C 20 V Collector Current, IC [A] Collector Current, IC [A] 160 8 6 120 10 V 40 VGE = 8 V 0 Collector−Emitter Voltage, VCE [V] Collector Current, IC [A] Collector Current, IC [A] 160 Common Emitter VGE = 15 V TC = 25°C TC = 125°C 120 80 40 0 0 80 40 2 20 Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] 3.5 80 A 2.5 2.0 1.5 1.0 25 4 6 8 10 Gate−Emitter Voltage, VGE [V] 40 A 20 A Common Emitter VGE = 15 V 50 75 100 Case Temperature, TC [°C] 12 Figure 4. Transfer Characteristics Figure 3. Typical Saturation Voltage Characteristics 3.0 10 Common Emitter VCE = 20 V TC = 25°C TC = 125°C 120 0 6 2 3 4 5 1 Collector−Emitter Voltage, VCE [V] 6 8 2 4 Collector−Emitter Voltage, VCE [V] Figure 2. Typical Saturation Voltage Characteristics Figure 1. Typical Output Characteristics 160 12 V 80 0 10 15 V 16 12 8 40 A 4 0 125 Figure 5. Saturation Voltage vs. Case Temperature Common Emitter TC = 25°C 80 A IC = 20 A 4 16 12 8 Gate−Emitter Voltage, VGE [V] Figure 6. Saturation Voltage vs. VGE www.onsemi.com 4 20 FGH80N60FD TYPICAL PERFORMANCE CHARACTERISTICS (continued) 5000 Common Emitter TC = 125°C 16 4000 Capacitance [pF] Collector−Emitter Voltage, VCE [V] 20 12 8 40 A 4 0 80 A 3000 300 V 200 V 3 0 10 s 100 6 0 30 400 Common Emitter TC = 25°C Collector Current, IC [A] Gate−Emitter Voltage, VGE [V] 15 9 10 1 Collector−Emitter Voltage, VCE [V] Figure 8. Capacitance Characteristics Figure 7. Saturation Voltage vs. VGE VCC = 100 V Crss 0 0.1 20 16 12 8 Gate−Emitter, VGE [V] 12 Coss 2000 1000 IC = 20 A 4 Ciss Common Emitter VGE = 0 V, f = 1 MHz TC = 125°C 50 100 Gate Charge, Qg [nC] 1 ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.01 150 100 s 10 1 1000 100 10 Collector−Emitter Voltage, VCE [V] Figure 10. SOA Characteristics Figure 9. Gate Charge Characteristics 200 200 100 Switching Time [ns] Collector Current, IC [A] 100 10 1 td(on) 10 Safe Operating Area VGE = 20 V, TC = 100°C 1 tr 5 10 1000 100 Collector−Emitter Voltage, VCE [V] Figure 11. Turn−Off Switching SOA Characteristics 0 10 Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 125°C 20 30 40 Gate Resistance, RG [] 50 Figure 12. Turn−On Characteristics vs. Gate Resistance www.onsemi.com 5 FGH80N60FD TYPICAL PERFORMANCE CHARACTERISTICS (continued) 2000 Switching Time [ns] 1000 Switching Time [ns] 200 Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 125°C td(off) 100 100 0 td(on) 10 20 30 40 Gate Resistance, RG [] 10 20 50 100 tf 40 60 Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 125°C 0.3 80 10 Eon Eoff 1 20 40 60 0 10 20 30 40 Gate Resistance, RG [] Figure 16. Switching Loss vs. Gate Resistance Figure 15. Turn−Off Characteristics vs. Collector Current Common Emitter VGE = 15 V, RG = 10  TC = 25°C TC = 125°C Eon Eoff 1 Collector Current, IC [A] 0.1 80 5 Common Emitter VGE = 15 V, RG = 10  TC = 25°C TC = 125°C td(off) 20 20 60 Figure 14. Turn−On Characteristics vs. Collector Current Switching Loss [mJ] 500 40 Collector Current, IC [A] Figure 13. Turn−Off Characteristics vs. Gate Resistance Switching Time [ns] tr tf 10 Switching Loss [mJ] Common Emitter VGE = 15 V, RG = 10  TC = 25°C TC = 125°C 80 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current www.onsemi.com 6 50 FGH80N60FD TYPICAL PERFORMANCE CHARACTERISTICS (continued) Thermal Response [Zjc] 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC Single Pulse 1E−3 1E−5 1E−4 1E−3 0.01 1 0.1 Rectangular Pulse Duration [sec] Figure 18. Transient Thermal Impedance of IGBT 600 TC = 125°C 10 Stored Recovery Charge, Qrr [nC]] Forward Current, IF [A] 100 TC = 75°C TC = 25°C 1 0.1 0 1 3 2 Forward Voltage, VF [V] 500 400 300 200 100 0 100 4 25°C 200 300 di/dt, [A/s] 400 Figure 20. Stored Charge Figure 19. Forward Characteristics 20 Reverse Recovery Current, Irr [A] 140 Reverse Recovery Time, trr [ns] 125°C 120 100 125°C 80 60 25°C 40 20 100 200 di/dt, [A/s] 300 15 10 125°C 5 25°C 0 100 400 200 300 400 di/dt, [A/s] Figure 22. Reverse Recovery Current Figure 21. Reverse Recovery Time www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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