FGY75T120SQDN
Ultra Field Stop IGBT,
1200 V, 75 A
General Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
both low on-state voltage and minimal switching loss. The IGBT is
well suited for UPS and solar applications. Incorporated into the
device is a soft and fast co-packaged free wheeling diode with a low
forward voltage.
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C
Features
•
•
•
•
•
•
•
G
Extremely Efficient Trench with Field Stop Technology
Maximum Junction Temperature: TJ = 175°C
Low Saturation Voltage: VCE(sat) = 1.7 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
RoHS Compliant
E
Applications
• Solar Inverter, UPS
G
(TJ = 25°C unless otherwise stated)
Parameter
Value
Unit
VCES
Collector to Emitter Voltage
1200
V
VGES
Gate to Emitter Voltage
±20
V
Transient Gate to Emitter Voltage
±30
V
Collector Current @ TC = 25°C
150
A
IC
Collector Current @ TC = 100°C
75
A
ILM(1)
Pulsed Collector Current @ TC = 25°C
300
A
ICM(2)
Pulsed Collector Current
300
A
Diode Forward Current @ TC = 25°C
150
A
Diode Forward Current @ TC = 100°C
75
A
IFM
Pulsed Diode Max. Forward Current
300
A
PD
Maximum Power Dissipation
@ TC = 25°C
@ TC = 100°C
TJ
Operating Junction Temperature
−55 to +175
°C
Tstg
Storage Temperature Range
−55 to +175
°C
300
°C
IF
TL
Maximum Lead Temp. for soldering
Purposes, 1/8″ from case for 5 s
W
790
395
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VCC = 800 V, VGE = 15 V, IC = 300 A, RG = 68 W, Inductive Load.
2. Repetitive rating: Pulse width limited by max. junction temperature.
© Semiconductor Components Industries, LLC, 2018
September, 2019 − Rev. 2
E
TO−247−3LD
CASE 340CD
ABSOLUTE MAXIMUM RATINGS
Symbol
C
1
MARKING DIAGRAM
$Y&Z&3&K
FGY75T120
SQDN
&Y
&Z
&3
&K
FGY75T120SQDN
= ON Semiconductor Logo
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Run Traceability Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
Publication Order Number:
FGY75T120SQDN/D
FGY75T120SQDN
THERMAL CHARACTERISTICS
Value
Unit
RqJC (IGBT)
Symbol
Thermal Resistance, Junction to Case, Max.
0.19
°C/W
RqJC (Diode)
Thermal Resistance, Junction to Case, Max.
0.38
°C/W
40
°C/W
RqJA
Parameter
Thermal Resistance, Junction to Ambient, Max.
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown
Voltage
VGE = 0 V, IC = 500 mA
1200
−
−
V
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
−
−
400
mA
IGES
G−E Leakage Current
VGE = VGES, VCE = 0 V
−
−
±200
nA
4.5
5.5
6.5
V
BVCES
ON CHARACTERISTICS
VGE(th)
G−E Threshold Voltage
IC = 400 mA, VCE = VGE
VCE(sat)
Collector to Emitter Saturation
Voltage
IC = 75 A, VGE = 15 V
−
1.7
1.95
V
IC = 75 A, VGE = 15 V, TC = 175°C
−
2.3
−
V
VCE = 20 V, VGE = 0 V, f = 1 MHz
−
9060
−
pF
DYNAMIC CHARACTERISTICS
Cies
Input Capacitance
Coes
Output Capacitance
−
242
−
pF
Cres
Reverse Transfer Capacitance
−
137
−
pF
−
64
−
ns
−
96
−
ns
Turn-Off Delay Time
−
332
−
ns
Fall Time
−
28
−
ns
Eon
Turn-On Switching Loss
−
6.25
−
mJ
Eoff
Turn-Off Switching Loss
−
1.96
−
mJ
Ets
Total Switching Loss
−
8.21
−
mJ
td(on)
Turn-On Delay Time
−
56
−
ns
−
80
−
ns
Turn-Off Delay Time
−
364
−
ns
Fall Time
−
88
−
ns
Eon
Turn-On Switching Loss
−
8.67
−
mJ
Eoff
Turn-Off Switching Loss
−
3.2
−
mJ
Ets
Total Switching Loss
−
11.87
−
mJ
Qg
Total Gate Charge
−
399
−
nC
Qge
Gate to Emitter Charge
−
74
−
nC
Qgc
Gate to Collector Charge
−
192
−
nC
SWITCHING CHARACTERISTICS
td(on)
tr
td(off)
tf
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Rise Time
VCC = 600 V, IC = 75 A,
RG = 10 W, VGE = 15 V,
Inductive Load, TC = 25°C
VCC = 600 V, IC = 75 A,
RG = 10 W, VGE = 15 V,
Inductive Load, TC = 175°C
VCE = 600 V, IC = 75 A,
VGE = 15 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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FGY75T120SQDN
ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted)
Parameter
Symbol
VFM
Test Conditions
Diode Forward Voltage
IF = 75 A
Typ
Max
Unit
TC = 25°C
−
3.4
4
V
TC = 175°C
−
2.7
−
TC = 25°C
−
99
−
trr
Diode Reverse Recovery
Time
TC = 175°C
−
329
−
Qrr
Diode Reverse Recovery
Charge
TC = 25°C
−
1001
−
TC = 175°C
−
5696
−
Diode Reverse Recovery
Current
TC = 25°C
−
20
−
TC = 175°C
−
34
−
Irrm
VR = 600 V, IF = 75 A, dIF/
dt = 500 A/ms
Min
ns
nC
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
FGY75T120SQDN
Top Mark
Package
Shipping
FGY75T120SQDN
TO−247−3LD
(Pb−Free)
30 / Tube
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FGY75T120SQDN
TYPICAL CHARACTERISTICS
Figure 1. Typical Output Characteristics (255C)
Figure 2. Typical Output Characteristics (1755C)
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case Temperature
at Variant Current Level
Figure 5. Saturation Voltage vs. VGE (255C)
Figure 6. Saturation Voltage vs. VGE (1755C)
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FGY75T120SQDN
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
Figure 9. Turn−On Characteristics vs.
Gate Resistance
Figure 10. Turn−Off Characteristics vs.
Gate Resistance
Figure 11. Turn−On Characteristics vs.
Collector Current
Figure 12. Turn−Off Characteristics vs.
Collector Current
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FGY75T120SQDN
TYPICAL CHARACTERISTICS
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector Current
Figure 15. Load Current vs. Frequency
Figure 16. SOA Characteristics
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Time vs. diF/dt
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FGY75T120SQDN
TYPICAL CHARACTERISTICS
Figure 19. Reverse Recovery Charge vs. diF/dt
Figure 20. Reverse Recovery Current vs. diF/dt
Figure 21. Transient Thermal Impedance of IGBT
Figure 22. Transient Thermal Impedance of Diode
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CD
ISSUE A
DATE 18 SEP 2018
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13857G
TO−247−3LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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